Patents by Inventor Robertus Antonius Maria Wolters

Robertus Antonius Maria Wolters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit with sensor and method of manufacturing such an integrated circuit
    Patent number: 9766195
    Abstract: Disclosed is an integrated circuit (IC) comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising at least one sensor electrode portion (20) and a bond pad portion (22), at least the at least one sensor electrode portion of said patterned upper metallization layer being covered by a moisture barrier film (23); a passivation stack (24, 26, 28) covering the metallization stack, said passivation stack comprising a first trench (32) exposing the at least one sensor electrode portion and a second trench (34) exposing the bond pad portion; said first trench being filled with a sensor active material (36). A method of manufacturing such an IC is also disclosed.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: September 19, 2017
    Assignee: ams International AG
    Inventors: Roel Daamen, Casper Juffermans, Josephus Franciscus Antonius Maria Guelen, Robertus Antonius Maria Wolters
  • INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT
    Publication number: 20120299126
    Abstract: Disclosed is an integrated circuit (IC) comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising at least one sensor electrode portion (20) and a bond pad portion (22), at least the at least one sensor electrode portion of said patterned upper metallization layer being covered by a moisture barrier film (23); a passivation stack (24, 26, 28) covering the metallization stack, said passivation stack comprising a first trench (32) exposing the at least one sensor electrode portion and a second trench (34) exposing the bond pad portion; said first trench being filled with a sensor active material (36). A method of manufacturing such an IC is also disclosed.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 29, 2012
    Applicant: NXP B.V.
    Inventors: Roel Daamen, Casper Juffermans, Josephus Franciscus Antonius Maria Guelen, Robertus Antonius Maria Wolters