Patents by Inventor Robertus Petrus Van Kampen
Robertus Petrus Van Kampen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230395348Abstract: An electrical arrangement for performing radio frequency isolation for microelectromechanical relay switches. A microelectromechanical relay switch comprises a beam configured to switch from a first position connected to an upper voltage source to a second position connected to a lower voltage source. The microelectromechanical relay switch further comprises at least one frequency isolation circuit or resistor disposed adjacent to the beam. The at least one frequency isolation circuit or resistor biases a direct current potential to allow for electrostatic actuation and further provides a path for transient electrical currents during switching.Type: ApplicationFiled: June 29, 2023Publication date: December 7, 2023Inventors: Roberto Gaddi, Robertus Petrus Van Kampen
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Patent number: 11746002Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.Type: GrantFiled: June 19, 2020Date of Patent: September 5, 2023Assignee: Qorvo US, Inc.Inventors: Robertus Petrus Van Kampen, Lance Barron, Richard L. Knipe
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Patent number: 11728116Abstract: An electrical arrangement for performing radio frequency isolation for microelectromechanical relay switches. A microelectromechanical relay switch comprises a beam configured to switch from a first position connected to an upper voltage source to a second position connected to a lower voltage source. The microelectromechanical relay switch further comprises at least one frequency isolation circuit or resistor disposed adjacent to the beam. The at least one frequency isolation circuit or resistor biases a direct current potential to allow for electrostatic actuation and further provides a path for transient electrical currents during switching.Type: GrantFiled: June 19, 2020Date of Patent: August 15, 2023Assignee: Qorvo US, Inc.Inventors: Roberto Gaddi, Robertus Petrus Van Kampen
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Patent number: 11705298Abstract: A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.Type: GrantFiled: June 19, 2020Date of Patent: July 18, 2023Assignee: Qorvo US, Inc.Inventors: Robertus Petrus Van Kampen, Lance Barron, Richard L. Knipe
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Publication number: 20230140449Abstract: A microelectromechanical system (MEMS) switch includes a movable beam suspended over a first set of conductive contacts and a second set of conductive contacts. Actuation of the MEMS switch occurs in two stages. During actuation of the MEMS switch, the movable beam is brought into contact with the first set of conductive contacts in a first stage of actuation. A first conduction path is created when the movable beam contacts the first set of conductive contacts. Continued actuation of the MEMS switch causes the movable beam to contact the second set of conductive contacts in a second stage of actuation. A second conduction path is created when the movable beam contacts the second set of conductive contacts.Type: ApplicationFiled: September 30, 2022Publication date: May 4, 2023Inventors: Roberto Gaddi, Robertus Petrus Van Kampen
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Publication number: 20220293382Abstract: Embodiments of the disclosure are directed to microelectromechanical system (MEMS) switches with a beam contact portion continuously extending between input and output terminal electrodes. In exemplary aspects disclosed herein, the movable beam includes a body and a contact with more conductivity and stiffness than the body. The contact continuously extends between and electrically couples the contact of the movable beam with the input and output terminal electrodes. Differing materials between the body and the contact allow for inclusion of the mechanical properties of the body (e.g., to reduce mechanical fatigue, creep, etc.) while utilizing the electrical properties of the contact (e.g., to reduce on-state electrical resistance). Accordingly, the MEMS switch provides low resistance loss during an on-state while maintaining high levels of isolation during an off-state.Type: ApplicationFiled: March 12, 2021Publication date: September 15, 2022Inventor: Robertus Petrus Van Kampen
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Patent number: 11417487Abstract: The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.Type: GrantFiled: September 14, 2017Date of Patent: August 16, 2022Assignee: Qorvo US, Inc.Inventors: Richard L. Knipe, Robertus Petrus Van Kampen, James Douglas Huffman, Lance Barron
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Patent number: 11261084Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.Type: GrantFiled: June 19, 2020Date of Patent: March 1, 2022Assignee: QORVO US, INC.Inventors: Robertus Petrus Van Kampen, Lance Barron, Mickael Renault, Shibajyoti Ghosh Dastider, Jacques Marcel Muyango, Richard L. Knipe
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Patent number: 11114265Abstract: The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.Type: GrantFiled: November 14, 2016Date of Patent: September 7, 2021Assignee: Cavendish Kinetics, Inc.Inventors: Robertus Petrus Van Kampen, Richard L. Knipe
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Patent number: 10964505Abstract: The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.Type: GrantFiled: November 15, 2016Date of Patent: March 30, 2021Assignee: Cavendish Kinetics, Inc.Inventors: Robertus Petrus Van Kampen, Lance Barron, Roberto Gaddi, Richard L. Knipe
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Patent number: 10896787Abstract: The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.Type: GrantFiled: November 14, 2016Date of Patent: January 19, 2021Assignee: Cavendish Kinetics, Inc.Inventors: Robertus Petrus Van Kampen, James Douglas Huffman, Mickael Renault, Shibajyoti Ghosh Dastider, Jacques Marcel Muyango
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Publication number: 20200402755Abstract: A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.Type: ApplicationFiled: June 19, 2020Publication date: December 24, 2020Inventors: Robertus Petrus Van Kampen, Lance Barron, Richard L. Knipe
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Publication number: 20200402756Abstract: An electrical arrangement for performing radio frequency isolation for microelectromechanical relay switches. A microelectromechanical relay switch comprises a beam configured to switch from a first position connected to an upper voltage source to a second position connected to a lower voltage source. The microelectromechanical relay switch further comprises at least one frequency isolation circuit or resistor disposed adjacent to the beam. The at least one frequency isolation circuit or resistor biases a direct current potential to allow for electrostatic actuation and further provides a path for transient electrical currents during switching.Type: ApplicationFiled: June 19, 2020Publication date: December 24, 2020Inventors: Roberto Gaddi, Robertus Petrus Van Kampen
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Publication number: 20200399115Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.Type: ApplicationFiled: June 19, 2020Publication date: December 24, 2020Inventors: Robertus Petrus Van Kampen, Lance Barron, Richard L. Knipe
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Publication number: 20200399121Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.Type: ApplicationFiled: June 19, 2020Publication date: December 24, 2020Inventors: Robertus Petrus Van Kampen, Lance Barron, Mickael Renault, Shibajyoti Ghosh Dastider, Jacques Marcel Muyango, Richard L. Knipe
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Patent number: 10867756Abstract: The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.Type: GrantFiled: November 14, 2016Date of Patent: December 15, 2020Assignee: Cavendish Kinetics, Inc.Inventors: Robertus Petrus Van Kampen, James Douglas Huffman, Mickael Renault, Shibajyoti Ghosh Dastider, Jacques Marcel Muyango
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Patent number: 10707039Abstract: The present invention generally relates to a mechanism for making the anchor of the MEMS switch more robust for current handling. The disclosure includes a modified leg and anchor design that allows for larger currents to be handled by the MEMS switch.Type: GrantFiled: November 14, 2016Date of Patent: July 7, 2020Assignee: Cavendish Kinetics, Inc.Inventors: Robertus Petrus Van Kampen, Richard L. Knipe
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Publication number: 20200185176Abstract: The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.Type: ApplicationFiled: September 14, 2017Publication date: June 11, 2020Inventors: Richard L. KNIPE, Jr., Robertus Petrus VAN KAMPEN, James Douglas HUFFMAN, Lance BARRON
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Patent number: 10566140Abstract: The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.Type: GrantFiled: August 1, 2014Date of Patent: February 18, 2020Assignee: CAVENDISH KINETICS, INC.Inventors: Richard L. Knipe, Charles G. Smith, Roberto Gaddi, Robertus Petrus Van Kampen
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Patent number: 10566163Abstract: A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.Type: GrantFiled: November 15, 2016Date of Patent: February 18, 2020Assignee: CAVENDISH KINETICS, INC.Inventors: Robertus Petrus Van Kampen, Richard L. Knipe, Mickael Renault, Shibajyoti Ghosh Dastider, Jacques Marcel Muyango