Patents by Inventor Robin Bloom

Robin Bloom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing a coating having a relatively high dielectric constant onto a substrate
    Publication number: 20060110531
    Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.
    Type: Application
    Filed: April 26, 2005
    Publication date: May 25, 2006
    Inventors: Jane Chang, You-Sheng Lin, Avishai Kepten, Michael Sendler, Sagy Levy, Robin Bloom
  • Method for depositing a coating having a relatively high dielectric constant onto a substrate
    Patent number: 6884719
    Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.
    Type: Grant
    Filed: March 19, 2002
    Date of Patent: April 26, 2005
    Assignees: Mattson Technology, Inc., The Regents of the University of California
    Inventors: Jane Chang, You-Sheng Lin, Avishai Kepten, Michael Sendler, Sagy Levy, Robin Bloom
  • Method for depositing a coating having a relatively high dielectric constant onto a substrate
    Publication number: 20030031793
    Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.
    Type: Application
    Filed: March 19, 2002
    Publication date: February 13, 2003
    Applicant: Mattson Technology, Inc.
    Inventors: Jane P. Chang, You-Sheng Lin, Avishai Kepten, Michael Sendler, Sagy Levy, Robin Bloom