Patents by Inventor Robin Lynn Kelley

Robin Lynn Kelley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
    Patent number: 9019001
    Abstract: A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: April 28, 2015
    Assignee: Power Integrations, Inc.
    Inventors: Robin Lynn Kelley, Fenton Rees
  • GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS
    Publication number: 20120218011
    Abstract: A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.
    Type: Application
    Filed: May 10, 2012
    Publication date: August 30, 2012
    Applicant: SS SC IP, LLC
    Inventors: Robin Lynn KELLEY, Fenton REES
  • Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
    Patent number: 8203377
    Abstract: A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.
    Type: Grant
    Filed: May 11, 2010
    Date of Patent: June 19, 2012
    Assignee: SS SC IP, LLC
    Inventors: Robin Lynn Kelley, Fenton Rees
  • GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS
    Publication number: 20100283515
    Abstract: A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.
    Type: Application
    Filed: May 11, 2010
    Publication date: November 11, 2010
    Applicant: SEMISOUTH LABORATORIES, INC.
    Inventors: Robin Lynn KELLEY, Fenton REES