Abstract: Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining a second plenum fluidly independent from the first plenum, wherein each tube of the plurality of second tubes includes a plurality of second holes, and wherein the plurality of first tubes are disposed in an alternating pattern with the plurality of second tubes across a width of the showerhead assembly and a heat sink disposed between the plurality of first tubes and the plurality of second tubes.

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Abstract: Apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

Abstract: An alignment module for housing and cleaning masks. The alignment module comprises a mask stocker, a cleaning chamber, an alignment chamber, an alignment stage a transfer robot. The mask stocker is configured to house a mask cassette configured to store a plurality of masks. The cleaning chamber is configured to clean the plurality of masks by providing one or more cleaning gases into a chamber after a mask is inserted into the cleaning chamber. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer a mask from one or more of the alignment stage and the mask stocker to the cleaning chamber.

Abstract: Embodiments of apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Abstract: An alignment module for positioning a mask on a substrate comprises a mask stocker, an alignment stage, and a transfer robot. The mask stocker houses a mask cassette that stores a plurality of masks. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer one of the one or more masks from the mask stocker to the alignment stage and position the mask over the substrate. The alignment module may be part of an integrated platform having one or more transfer chambers, a factory interface having a substrate carrier chamber and one or more processing chambers. A carrier may be coupled to a substrate within the substrate carrier chamber and moved between the processing chambers to generate a semiconductor device.

Abstract: Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber.

Abstract: Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber.

Abstract: Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Abstract: Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

Abstract: Methods and apparatus for a magnetized substrate carrier apparatus are described herein. In some embodiments, a substrate carrier apparatus includes: a carrier plate having a support surface to support a substrate, a mask assembly disposed above the support surface, wherein the mask assembly includes an annular frame and a shadow mask disposed within the annular frame, and wherein the shadow mask includes one or more openings arranged in a predetermined pattern and disposed through the shadow mask, and one or more magnets disposed on or embedded within at least one of the carrier plate and the shadow mask to create a magnetic field above the support surface.

Abstract: Substrate carrier apparatus having a hard mask are disclosed herein. In some embodiments, a substrate carrier apparatus includes a carrier body having a support surface to support a substrate; and a mask assembly disposed above the support surface. The mask assembly includes an annular frame disposed atop the support surface; and a hard mask coupled to and disposed within the annular frame above the support surface, wherein the hard mask includes one or more openings arranged in a predetermined pattern and disposed through the hard mask, and wherein the hard mask includes a plurality of spacer elements extending from a bottom surface of the hard mask.

Abstract: Methods and apparatus for forming an interconnect, including: depositing a first barrier layer upon a top surface of a via and a top surface of a trench; filling the via with a first metal, wherein the first metal completely fills the via and forms a metal layer within the trench; etching the metal layer within the trench to expose dielectric sidewalls of the trench, a top surface of the via, and a dielectric bottom of the trench; depositing a second barrier layer upon the dielectric sidewalls, top surface of the via, and the dielectric bottom of the trench; and filling the trench with a second metal different than the first metal.

Abstract: Embodiments of methods and apparatus for filling a feature disposed in a substrate are disclosed herein. In some embodiments, a method for filling a feature disposed in a substrate includes (a) depositing a metal within the feature to a first predetermined thickness in a first process chamber; (b) depositing the metal within the feature to a second predetermined thickness in a second process chamber; (c) etching the metal deposited in (b) to remove an overhang of the metal at a top of the feature in a third process chamber different than the first and second process chambers; and (d) subsequent to (c), filling the feature with the metal in a fourth process chamber different than the first and third process chambers.