Abstract: A contact arrangement for a semiconductor device (typically a GTO thyristor), in which a disc-shaped first connector electrically connects one region of the semiconductor element with its associated contact. The first connector having therein apertures through which pass resiliently-loaded electrical connections to a second region of the element, the surface of that second region lying below the surface(s) of the first region. The various parts of the device may be so shaped as to ensure correct relative positioning of the parts during assembly and the maintenance of that positioning during subsequent handling.

Abstract: A semiconductor housing particularly useful for very high current devices, e.g. transistors and G.T.O. thyristors, in which a control lead to the base or gate of the device, which also has to carry a relatively high current, passes through an insulating wall of the housing. This control lead is enclosed within a tube which passes through an insulating wall of the housing and which is hermetically sealed to it, the tube is also hermetically sealed to the conductor at either end. The coefficient of expansion of the tube is chosen so as to be substantially the same as the coefficient of expansion of the material of the insulating wall, which may be made of ceramic material or the like. The arrangement avoids corrosion effects as a result of the entrapment of plating salts etc. which are known to adversely affect the assembly and especially the electrical performance of the control lead connection.