Abstract: A high resolution, rugged fiber optic coupler for use in optical data transmission systems and method of its manufacture. The fiber optic coupler includes a pair of thin silicon wafers having preferentially etched complementary opposed V-grooves. A very thin layer of a deformable hard glass is used as the lining for the V-grooves and also for covering one of the opposed surfaces of the pair of wafers. An optical fiber is held securely within a pair of opposed complementary V-grooves by the deformable hard glass lining. Preferably, the pair of silicon wafers is joined to each other, with the optical fiber held therebetween in the opposed V-grooves, by electrostatic bonding.

Abstract: Method and apparatus for the front surface metallization and encapsulation of solar cells of the type comprising p and n semiconductor strata separated by a barrier junction, and front and rear conducting strata constituting electrical contacts, wherein the front conducting stratum is a novel metallic grid permitting transmission of solar radiation to the semiconductor strata. This metallic grid is in the form of a mesh of wires of sufficiently high tensile strength to be self-supporting while being drawn from spools or the like into contact with one or more components of the solar cell before completion of the cell's fabrication.The method is characterized in that the metallic grid, in the form of the mesh of wires, is encapsulated between a transparent cover plate and the exposed front surface of the semiconductor strata, the mesh forming an electrical contact with the front surface of the semiconductor strata simultaneously that the plate is electrostatically bonded thereto.

Abstract: A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions are extracted from the compound and are deposited on the substrate. Preferably, the deposition is effected first at a slow deposition rate, followed by a higher deposition rate. The deposited ions are permitted to coalesce into lattice clusters, which clusters are grown, by further deposition, into a large-grain, thin semiconductor film on the substrate. Preferably, the semiconductor-based gaseous compound includes silane gas with dopant atom source gases.

Abstract: A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns. The coating apparatus includes an rf excited plasma source chamber having a gas feed ring for ionizing a gas admitted into the chamber via the ring. The preferred feed gas is a borazine and benzene vapor mixture. A coating chamber is mounted adjacent to and contiguous with the plasma source chamber via a neck portion. The coating chamber includes a vacuum interlock to permit the entry and removal of a tool transport. At least one vacuum pump is operatively connected to the chamber. Preferably, a plurality of permanent magnets and electron supply filaments are arranged circumferentially about the plasma source chamber. Preferably, the tool transport is rotatable during coating.

Abstract: Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates. The process comprises forming a low-cost silicon substrate, forming a graded transition region on the substrate and epitaxially growing a thin gallium arsenide film on the graded transition region. The process further includes doping the thin gallium arsenide film and forming a junction therein. The graded transition region preferably is a zone refined mixture of silicon and germanium characterized by a higher percentage of germanium at the surface of the region than adjacent the substrate. The process also includes the formation of homojunctions in thin gallium arsenide films.Solar cells made from the materials manufactured according to the process are characterized by a high conversion efficiency, improved stability and relatively low unit cost.

Abstract: Method and apparatus for the front surface metallization and encapsulation of solar cells of the type comprising p and n semiconductor strata separated by a barrier junction, and front and rear conducting strata constituting electrical contacts, wherein the front conducting stratum is a novel metallic grid permitting transmission of solar radiation to the semiconductor strata. This metallic grid is in the form of a mesh of wires of sufficiently high tensile strength to be self-supporting while being drawn from spools or the like into contact with one or more components of the solar cell before completion of the cells's fabrication.The method is characterized in that the metallic grid, in the form of the mesh of wires, is encapsulated between a transparent cover plate and the exposed front surface of the semiconductor strata, the mesh forming an electrical contact with the front surface of the semiconductor strata simultaneously that the plate is electrostatically bonded thereto.

Abstract: An integrated system and process for the continuous formation of p-n junctions in solar cells in a cost-effective manner and under computer control. The integrated system essentially comprises an ion beam implanter, an electron beam annealer and a combination vacuum lock-and-wafer transport system, all disposed within a unitary housing maintained under a common vacuum environment.The integrated system employs no wet chemistry operations and, is characterized by high reproducibility and narrow solar cell performance distribution.

Abstract: The surface of a starting single crystal of specified composition (e.g., silicon) is etched to produce a relief texture; a stratum of release composition (e.g., aluminum) is deposited on the relief texture to acquire a replica texture and is released to provide a replica master; a replica stratum of the specified composition in the amorphous or polycrystalline state is deposited on the replica master in order to acquire the original relief texture. It has been found that, when the replica stratum is recrystallized, it assumes a replica single crystal structure corresponding to the starting single crystal structure.

Abstract: Method and apparatus for the front surface metallization and encapsulation of solar cells of the type comprising p and n semiconductor strata separated by a barrier junction, and front and rear conducting strata constituting electrical contacts, wherein the front conducting stratum is a novel metallic grid permitting transmission of solar radiation to the semiconductor strata. This metallic grid is in the form of a mesh of wires of sufficiently high tensile strength to be self-supporting while being drawn from spools or the like into contact with one or more components of the solar cell before completion of the cell's fabrication.The method is characterized in that the metallic grid, in the form of the mesh of wires, is encapsulated between a transparent cover plate and the exposed front surface of the semiconductor strata, the mesh forming an electrical contact with the front surface of the semiconductor strata simultaneously that the plate is electrostatically bonded thereto.

Abstract: An electron beam processor with an energy storage line and matched field emission diode that define a high energy electron beam generator. A transport system positions a specimen to be thermally processed in a processing station. Energy stored on the line is discharged through the diode and the resulting high energy beam impacts upon the specimen for thermally processing selected regions thereof.

Abstract: An electron beam processor with an energy storage line and matched field emission diode that define a high energy electron beam generator. A transport system positions a specimen to be thermally processed in a processing station. Energy stored on the line is discharged through the diode and the resulting high energy beam impacts upon the specimen for thermally processing selected regions thereof. A tubular capacitor is disclosed for use in the processor. The capacitor (electrical energy store) has a shape so that it can be secured in coaxially in a pressure vessel. An outer electrode of the capacitor can include a mesh screen.

Abstract: A scanning X-ray source with an evacuated cylindrical chamber which bounds a cavity that is configured to receive a patient undergoing diagnosis. A moving electron beam is generated from a cathode which is attached to a rotating drum that is mounted within the chamber. The moving electron beam is directed towards and moves along a fixed annular anode mounted within the chamber. The points of beam impingement on the anode define a moving source of X-rays which sequentially irradiate the body from all directions. A plurality of detectors mounted adjacent the anode measure the amount of X-ray absorption. A processor receives the detected signals and reconstructs the absorption at each point to provide a two-dimensional density presentation for each body cross section.

Abstract: An evacuated enclosure in the form of a cylindrical cavity having a dielectric located therein defines a dielectric guide for transporting an electron beam introduced into the cavity. The dielectric, which is disposed about the cavity wall, is operative to trap the charge associated with normal vacuum expansion of the electron beam. The trapped charge, in cases where the injected electron beam is not space charge limited, modifies the electric fields within the cavity in such a way as to provide focusing forces on the electron beam propagating through the cavity, the focusing forces being sufficient to quide a major portion of the beam through the enclosure without attenuation. Within the injected beam is space charge limited, the trapped charge induces an electrical discharge--either surface flashover or volume puncture of the dielectric--which liberates gaseous material. This gas then ionizes, is attracted by space charge electric fields into the body of the beam, and provides space charge neutralization.

Abstract: An evacuated enclosure in the form of a cylindrical cavity having a dielectric located therein defines a dielectric guide for transporting an electron beam introduced into the cavity. The dielectric, which is disposed about the cavity wall, is operative to trap the charge associated with normal vacuum expansion of the electron beam. The trapped charge, in cases where the injected electron beam is not space charge limited, modifies the electric fields within the cavity in such a way as to provide focusing forces on the electron beam propogating through the cavity, the focusing forces being sufficient to guide a major portion of the beam through the enclosure without attenuation. Within the injected beam is space charge limited, the trapped charge induces an electrical discharge -- either surface flashover or volume puncture of the dielectric -- which liberates gaseous material.

Abstract: An electron gun assembly generates an accelerated and sharply focused electron beam which is deflected in a predetermined path to impinge upon an extended split anode structure in a selected scanning pattern with approximately half the beam current impinging on each half of the split anode. A signal proportional to the difference between the two currents from each half of the split anode provides feedback control to the beam deflection system for constraining the beam to follow the fissure of the split anode. X-rays which are generated at the point of beam impingement on the split anode constitute a moving source of X-rays as the point of beam impingement travels in the selected pattern along the anode.