Abstract: A method of reducing implant dose loss is provided. The method includes performing multiple low dose implant steps with interspersed anneal steps, thereby avoiding amorphous-silicon formation. The anneal steps may be performed at high temperatures or at low temperatures.

Abstract: Surface characteristics of a surface of a three-dimensional object, such as surface area, surface area enhancement (i.e., the ratio of the actual surface area to an area of that surface projected onto an X-Y plane), and surface roughness parameters can be calculated based solely on line-based measurements and without performing the calculations required to actually create a three-dimensional image of that surface. Because a true three-dimensional image is not created, interline registration and low frequency noise limitations are eliminated from the measurement, and data can be acquired by scanning bidirectionally without adversely affecting the results. Likewise, the analysis time required to determine surface parameters is a fraction of that required by image-based techniques. This technique, being line-based rather than image-based, can be performed by any probe-based instrument, optical-based instrument, or any other instrument capable of measuring a sample surface in either digital or analog fashion.

Abstract: Precise sensing and controlling of temperature during in-situ testing of a structure used in an integrated circuit by fabricating or placing a heat source element adjacent to the structure and by fabricating or placing a temperature sensing element adjacent to the structure.

Abstract: Electron beam emitting filaments having a tip with a radius of curvature less than about 50 .ANG. are produced using focused ion beam milling. In one embodiment, platinum is deposited on a tungsten loop electron beam filament and sharpened using focused ion beam milling to a radius of curvature less than about 50 .ANG..

Abstract: Electron beam emitting filaments having a tip with a radius of curvature less than about 50 .ANG. are produced using focused ion beam milling. In one embodiment, platinum is deposited on a tungsten loop electron beam filament and sharpened using focused ion beam milling to a radius of curvature less than about 50 .ANG..

Abstract: An accurate method of measuring the two-dimensional doping profile of a semiconductor by measuring an electrical parameter along a path of a dopant iso-concentration. Thin vertical or horizontal slices of the semiconductor integrated circuit are provided and are probed to allow the electrical parameter to be measured through a single concentration area.

Abstract: A method of accurately determining the composition of a dielectric film in a semiconductor device by performing a compositional analysis on a film only portion of the semiconductor device.

Abstract: A sample to be analyzed by a scanning electron microscope is held at an electrostatic potential higher than the recording plate of the microscope. This provides that electrons scattered from the sample which are at an energy level lower than a chosen level are drawn back into the sample by the potential of the sample, while other, higher energy scattered electrons reach the recording plate to form a pattern thereon.