Patents by Inventor Roger Ruojia Lee

Roger Ruojia Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High performance sub-micron P-channel transistor with germanium implant
    Patent number: RE37158
    Abstract: Implantation of germanium (45) into a PMOS buried channel to permits the enhancement implant profile (to 45) to be made more shallow. The shallow profile will reduce or eventually solve P-channel buried channel-induced short channel effects and enable further decrease in device length to deep submicron range. Benefits include better short channel characteristics, i.e., higher punch through voltage BVDSS, less VT sensitivity to the drain voltage (defined as curl) and better subthreshold leakage characteristics.
    Type: Grant
    Filed: November 30, 1995
    Date of Patent: May 1, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Roger Ruojia Lee