Patents by Inventor Rohan Houlden

Rohan Houlden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230299733
    Abstract: A piezoelectric resonator device can be formed to include a piezoelectric film including an active area configured to provide a thickness excited mode of vibration, a first electrode on a first surface of the piezoelectric film positioned to electromechanically couple to the active area, a second electrode on a second surface of the piezoelectric film, opposite the first surface, the second electrode positioned to electromechanically couple to the active area, an energy confinement frame extending on the piezoelectric film embedded in the first or second electrode, an inner side wall of the energy confinement frame facing toward the active area and extending around the active area to define a perimeter that separates the active area located inside the perimeter from an outer area located outside the perimeter adjacent to the active area, an outer side wall of the energy confinement frame facing toward the outer area and aligned to an outer side wall of the first or second electrode and a conformal low-impedan
    Type: Application
    Filed: March 17, 2023
    Publication date: September 21, 2023
    Inventors: Abhay Saranswarup Kochhar, Dae Ho Kim, Zhiqiang Bi, Emad Mehdizadeh, Mojtaba Hodjat-Shamami, Mary Winters, Rohan Houlden, Jeffrey B. Shealy
  • Patent number: 6680652
    Abstract: The present invention relates to controlling load impedance during wireless communications to maintain amplifier linearity for transmissions, such as voice and high-speed data, having significantly different peak-to-average power ratios. At a desired output power, a first load impedance is selected for transmissions having a first peak-to-average power ratio and a second load impedance is selected for transmissions having a second peak-to-average power ratio, in order to ensure that appropriate amplifier linearity is achieved for both voice and high-speed data transmissions. Preferably, amplifier efficiency is optimized for transmissions having the first and second peak-to-average power ratios. Changing the effective load impedance may be effected by providing a first impedance network and switching a second impedance network in association with the first impedance network.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: January 20, 2004
    Assignee: RF Micro Devices, Inc.
    Inventors: Kevin Hoheisel, Richard Hohneke, Rohan Houlden, Neal Mains, Stephen Oglesby
  • Publication number: 20030025561
    Abstract: The present invention relates to controlling load impedance during wireless communications to maintain amplifier linearity for transmissions, such as voice and high-speed data, having significantly different peak-to-average power ratios. At a desired output power, a first load impedance is selected for transmissions having a first peak-to-average power ratio and a second load impedance is selected for transmissions having a second peak-to-average power ratio, in order to ensure that appropriate amplifier linearity is achieved for both voice and high-speed data transmissions. Preferably, amplifier efficiency is optimized for transmissions having the first and second peak-to-average power ratios. Changing the effective load impedance may be effected by providing a first impedance network and switching a second impedance network in association with the first impedance network.
    Type: Application
    Filed: August 6, 2001
    Publication date: February 6, 2003
    Inventors: Kevin Hoheisel, Richard Hohneke, Rohan Houlden, Neal Mains, Stephen Oglesby