Abstract: An LED module includes: an LED chip; and a resin case having a reflective surface surrounding the LED chip. An area contact inhibitor to inhibit area contact with an adjacent LED module is formed on an outer surface of the resin case.

Abstract: A method of manufacturing a chip resistor includes forming a resistor assembly in which a conductive member including portions separated from each other in a first direction is provided in a resistance body member; and dividing the resistor assembly into chip resistors, each including a chip-shaped resistance body formed by a part of the resistance body member, a pair of main electrodes formed by a part of the conductive member and separated from each other in the first direction, and a pair of sub-electrodes formed by a part of the conductive member, separated from each other in the first direction, and adjacent to the main electrodes in a second direction perpendicular to the first direction with concave portions recessed in the first direction interposed therebetween, by punching.

Abstract: It is provided an LED lighting device calibratable to 0 to 100% of wide range about a chromaticity and luminance of a illumination light by a simple configuration, and a driving method for the LED lighting device. The LED lighting device is provided with a first light-emitting unit and a second light-emitting unit differing a color temperature mutually, and a control circuit for executing a cyclic light/quench control of the first light-emitting unit and the second light-emitting unit, and for executing a light control of the first light-emitting unit and the second light-emitting unit by a PNM (Pulse Number Modulation) control in a fixed cycle so as to have a lighting period Ton for lighting/quenching the first light-emitting unit and the second light-emitting unit complementarily, and a quenching period Toff for quenching both the first light-emitting unit and the second light-emitting unit.

Abstract: A drive unit has a load driving portion driving a load by a PWM drive method; a soft-start function portion for achieving a soft-start function; and a soft-start disabling portion counting a time elapsed after a PWM signal is turned on at start-up of the unit, and disabling the soft-start function when a count value reaches a predetermined value.

Abstract: A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

Abstract: A terminal device has: a sensor unit which perform a measurement; a position detection unit which acquires information for specifying a position; a timing unit which acquires time information; a communication unit which communicates via a communication network; and a control unit. The control unit generates position information for indicating a position of the terminal device by the position detection unit. Besides, the control unit changes accuracy of the position information within a predetermined range, and generates information for transmission related with the changed position information, the time information gotten by the timing unit, and measurement information indicating a measurement result of the sensor unit. In addition, the control unit controls the communication unit so as to transmit the information for the transmission to an information processing device via a communication network.

Abstract: The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

Abstract: A light source turn-on/off controller includes an input section of a turn-on/off timing signal, a PWM signal generating section for generating a pulse signal responding to a rise or a fall of the timing signal, a duty cycle of the pulse signal changing so as to simulate a rise or a fall of emission in turn-on or turn-off of a filament, an emission control section for controlling an emitting section responding to the pulse signal from the PWM signal generating section, and a storage section for storing a control data table for duty cycle control by the PWM signal generating section. The control data table includes a rise table to be referred to in the rise of emission and a fall table to be referred to in the fall of emission, and each of the rise table and the fall table indicates association between elapsed time from the rise or the fall of the timing signal and the duty cycle of the pulse signal, and a relationship between the tables indicates that they cannot be superposed on each other.

Abstract: The semiconductor device has the CSP structure, and may include a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps may be arranged in two rows along the periphery of the semiconductor device. The electrode pads may be arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring may be extended from an electrode pad, and may be connected to any one of the outermost solder bumps or any one of the inner solder bumps.

Abstract: A module (1) includes a first functional device (2) and a second functional device (3). The first functional device (2) includes a base electrode, an emitter electrode and a collector electrode. The second functional device (3) includes at least one electrode. The module (1) further includes a conductive frame (4). One of the base electrode, the emitter electrode, and the collector electrode of the first functional device (2) is directly connected to the frame (4). The electrode of the second functional device (3) is also directly connected to the frame (4). The frame (4) includes a portion serving as a terminal for external connection.

Abstract: A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, wit

Abstract: A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.

Abstract: A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal.

Abstract: A semiconductor device includes: an n?-type base layer; a p-type base layer formed in a part of a front surface portion of the n?-type base layer; an n+-type source layer formed in a part of a front surface portion of the p-type base layer; a gate insulating film formed on the front surface of the p-type base layer between the n+-type source layer and the n?-type base layer; a gate electrode that faces the p-type base layer through the gate insulating film; a p-type column layer formed continuously from the p-type base layer in the n?-type base layer; a p+-type collector layer formed in a part of a rear surface portion of the n?-type base layer; a source electrode electrically connected to the n+-type source layer; and a drain electrode electrically connected to the n?-type base layer and to the p+-type collector layer.

Abstract: A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions.

Abstract: A microchip including a first substrate with a groove formed on a substrate surface or a pass-through hole passing in a thickness direction of the substrate, and one or more second substrates laminated on a surface of the first substrate; the microchip including an optical measurement cuvette consisting of a space configured by the groove or the pass-through hole, and a substrate surface of the second substrate; wherein a side wall surface of the second substrate is positioned on an inner side than a side wall surface of the first substrate in at least one part of a side wall surface of the microchip, and a method of using the same are provided.

Abstract: A load driving device according to the present invention is provided with: an enabling control section generating an enabling signal from an externally inputted PWM signal; and a load driving section that is turned on/off according to the enabling signal, and that PWM-drives the load according to the PWM signal.

Abstract: An information exchange device includes a human body communication unit which applies information flowing via a human body to a human body and detects information flowing via the human body, an information transmission unit which transmits information via the human body communication unit, an identification unit which identifies other device which can transmit information from the information transmission unit, a detection unit which detects a contact state with other human body, and a transmission control unit which starts transmission of information according to identification by the identification unit and a detection by the detection unit.

Abstract: A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

Abstract: The organic light emitting device of the present invention has a plurality of emission layers between an anode and a cathode, and the emission layers are separated from each other by an equipotential surface forming layer or a charge generating layer. The feature of the present invention resides in that the organic light emitting device has, at least either inside or outside the device, a light scattering means for scattering light emitted from the emission layers. The organic light emitting device can reduce the angle dependency of the emission brightness and the emission color by outputting the light emitted from the emission layers in a condition where the light is scattered by the light scattering means.