Patents by Inventor Roland Koppert
Roland Koppert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8882565Abstract: A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO2 with an average grain size in a range of 0.1 to 1.0 ?m. The aqueous polishing agent solution comprising an alkaline component, being free of solid materials and having a variable pH value in a range of 11 to 13.5. The aqueous polishing agent solution is maintained at a pH value of less than 13 during the polishing process and the pH value of the aqueous polishing agent solution is increased to a range of 13 to 13.5 so as to end the polishing process.Type: GrantFiled: March 8, 2011Date of Patent: November 11, 2014Assignee: Siltronic AGInventors: Juergen Schwandner, Roland Koppert
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Patent number: 8721390Abstract: A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step.Type: GrantFiled: March 7, 2011Date of Patent: May 13, 2014Assignee: Siltronic AGInventors: Juergen Schwandner, Thomas Buschhardt, Roland Koppert
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Patent number: 8647985Abstract: Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step.Type: GrantFiled: July 2, 2008Date of Patent: February 11, 2014Assignee: Siltronic AGInventors: Juergen Schwandner, Thomas Buschhardt, Roland Koppert, Georg Pietsch
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Patent number: 8647173Abstract: A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad.Type: GrantFiled: March 11, 2013Date of Patent: February 11, 2014Assignee: Siltronic AGInventors: Juergen Schwandner, Thomas Buschhardt, Roland Koppert
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Patent number: 8551870Abstract: Epitaxially coated semiconductor wafers are produced by minimally the following steps in the order specified: (a) depositing an epitaxial layer on one side of a semiconductor wafer; (b) first polishing the epitaxially coated side of the semiconductor wafer with a polishing pad with fixed abrasive while supplying a polishing solution which is free of solids; (c) CMP polishing of the epitaxially coated side of the semiconductor wafer with a soft polishing pad which contains no fixed abrasive, while supplying a polishing agent suspension; (d) depositing another epitaxial layer on the previously epitaxially coated and polished side of the semiconductor wafer.Type: GrantFiled: June 10, 2010Date of Patent: October 8, 2013Assignee: Siltronic AGInventors: Juergen Schwandner, Roland Koppert
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Patent number: 8444455Abstract: A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 ?m, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers.Type: GrantFiled: May 5, 2010Date of Patent: May 21, 2013Assignee: SILTRONIC AGInventors: Juergen Schwandner, Roland Koppert
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Patent number: 8338302Abstract: Semiconductor wafer provided with a strain-relaxed layer of Si1-xGex, are polished in a first step of mechanical machining of the Si1-xGex layer of the semiconductor wafer in a polishing machine using a polishing pad containing fixedly bonded abrasive materials having a particle size of 0.55 ?m or less, and also a second step of a chemomechanical machining of the previously mechanically machined Si1-xGex layer of the semiconductor wafer using a polishing pad and with supply of a polishing agent slurry containing abrasive materials.Type: GrantFiled: November 2, 2009Date of Patent: December 25, 2012Assignee: Siltronic AGInventors: Juergen Schwandner, Roland Koppert
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Publication number: 20110244760Abstract: A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO2 with an average grain size in a range of 0.1 to 1.0 ?m. The aqueous polishing agent solution comprising an alkaline component, being free of solid materials and having a variable pH value in a range of 11 to 13.5. The aqueous polishing agent solution is maintained at a pH value of less than 13 during the polishing process and the pH value of the aqueous polishing agent solution is increased to a range of 13 to 13.5 so as to end the polishing process.Type: ApplicationFiled: March 8, 2011Publication date: October 6, 2011Applicant: SILTRONIC AGInventors: Juergen Schwandner, Roland Koppert
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Publication number: 20110244762Abstract: A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step.Type: ApplicationFiled: March 7, 2011Publication date: October 6, 2011Applicant: SILTRONIC AGInventors: Juergen Schwandner, Thomas Buschhardt, Roland Koppert
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Publication number: 20110097974Abstract: A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad.Type: ApplicationFiled: October 4, 2010Publication date: April 28, 2011Applicant: Siltronic AGInventors: Juergen SCHWANDNER, Thomas BUSCHHARDT, Roland KOPPERT
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Publication number: 20100330786Abstract: Epitaxially coated semiconductor wafers are produced by minimally the following steps in the order specified: (a) depositing an epitaxial layer on one side of a semiconductor wafer; (b) first polishing the epitaxially coated side of the semiconductor wafer with a polishing pad with fixed abrasive while supplying a polishing solution which is free of solids; (c) CMP polishing of the epitaxially coated side of the semiconductor wafer with a soft polishing pad which contains no fixed abrasive, while supplying a polishing agent suspension; (d) depositing another epitaxial layer on the previously epitaxially coated and polished side of the semiconductor wafer.Type: ApplicationFiled: June 10, 2010Publication date: December 30, 2010Applicant: SILTRONIC AGInventors: Juergen Schwandner, Roland Koppert
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Publication number: 20100330882Abstract: A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 ?m, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers.Type: ApplicationFiled: May 5, 2010Publication date: December 30, 2010Applicant: SILTRONIC AGInventors: Juergen Schwandner, Roland Koppert
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Publication number: 20100130012Abstract: Semiconductor wafer provided with a strain-relaxed layer of Si1-xGex, are polished in a first step of mechanical machining of the Si1-xGex layer of the semiconductor wafer in a polishing machine using a polishing pad containing fixedly bonded abrasive materials having a particle size of 0.55 ?m or less, and also a second step of a chemomechanical machining of the previously mechanically machined Si1-xGex layer of the semiconductor wafer using a polishing pad and with supply of a polishing agent slurry containing abrasive materials.Type: ApplicationFiled: November 2, 2009Publication date: May 27, 2010Applicant: SILTRONIC AGInventors: Juergen Schwandner, Roland Koppert
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Publication number: 20090029552Abstract: Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step.Type: ApplicationFiled: July 2, 2008Publication date: January 29, 2009Applicant: SILTRONIC AGInventors: Juergen Schwandner, Thomas Buschhardt, Roland Koppert, Georg Pietsch