Abstract: A magnetic revolution counter, and method for determining a predefinable number n of revolutions to be determined of a rotating magnetic field, generated by a magnetic system includes a revolution sensor, which includes magnetic domain wall conductors composed of open spirals or closed, multiply-wound loops, which are formed by a GMR layer stack or a soft magnetic layer comprising locally present TMR layer stacks and in which magnetic 180° domain walls can be introduced and located by measuring the electrical resistance of predefinable spiral or loop sections, wherein a single domain wall is, or at least two magnetic domain walls are, introduced into the domain wall conductors such that the at least two domain walls are brought into a defined separation of greater than 360° with respect to one another, based on the change in location thereof from a first to a second position, with a rotation of the outer magnetic field by the angle of greater than 360°, and are permanently thus spaced apart from one another,

Abstract: A magnetic revolution counter for the self-identification of error states includes magnetic domain wall conductors which are composed of open spirals or closed, multiply-wound loops, formed by a GMR layer stack or a sort magnetic layer of locally present TMR layer stacks and in which the magnetic 180° domain walls can be introduced and located, wherein a predefinable bijective magnetization pattern of domain walls and/or domain wall gaps is written in, and the associated signal levels thereof are stored in the form of signal level sequences in a first memory in tabular form, which is compared to tabular target value patterns of the signal level sequences stored in a second memory for each permissible revolution i (0?i?n), and a third memory is provided, in which tabular error target value patterns of deviations of signal level sequences, caused thereby, from regular signal level sequences stored in the second memory are stored.

Abstract: A magnetic sensor for the absolute counting of revolutions or linear distances includes a soft magnetic loop structure, which is populated with a predeterminable number of magnetic domains and provided with GMR or TMR layer assemblies, in which at least two separate coplanar loops having predominantly straight subsegments extending in a rhombus-like arrangement with respect to each other are provided, and the at least two loops are connected to each other via a shared intersecting point, wherein directly in front of each intersecting region in which, and after which, the domains can change from one loop to the neighboring loop, these sections of the loop structure are bent away from the conductor guidance and are curved in a siphon-like manner in this region so as to be directed into the interior of the loop structure, wherein the conductors in respective siphon-like troughs intersect each other perpendicularly.

Abstract: A magnetic revolution counter, and method for determining a predefinable number n of revolutions to be determined of a rotating magnetic field, generated by a magnetic system includes a revolution sensor, which includes magnetic domain wall conductors composed of open spirals or closed, multiply-wound loops, which are formed by a GMR layer stack or a soft magnetic layer comprising locally present TMR layer stacks and in which magnetic 180° domain walls can be introduced and located by measuring the electrical resistance of predefinable spiral or loop sections, wherein a single domain wall is, or at least two magnetic domain walls are, introduced into the domain wall conductors such that the at least two domain walls are brought into a defined separation of greater than 360° with respect to one another, based on the change in location thereof from a first to a second position, with a rotation of the outer magnetic field by the angle of greater than 360°, and are permanently thus spaced apart from one another,

Abstract: A magnetic revolution counter for the self-identification of error states includes magnetic domain wall conductors which are composed of open spirals or closed, multiply-wound loops, formed by a GMR layer stack or a sort magnetic layer of locally present TMR layer stacks and in which the magnetic 180° domain walls can be introduced and located, wherein a predefinable bijective magnetization pattern of domain walls and/or domain wall gaps is written in, and the associated signal levels thereof are stored in the form of signal level sequences in a first memory in tabular form, which is compared to tabular target value patterns of the signal level sequences stored in a second memory for each permissible revolution i (0?i?n), and a third memory is provided, in which tabular error target value patterns of deviations of signal level sequences, caused thereby, from regular signal level sequences stored in the second memory are stored.

Abstract: A magnetic sensor for the absolute counting of revolutions or linear distances includes a soft magnetic loop structure, which is populated with a predeterminable number of magnetic domains and provided with GMR or TMR layer assemblies, in which at least two separate coplanar loops having predominantly straight subsegments extending in a rhombus-like arrangement with respect to each other are provided, and the at least two loops are connected to each other via a shared intersecting point, wherein directly in front of each intersecting region in which, and after which, the domains can change from one loop to the neighboring loop, these sections of the loop structure are bent away from the conductor guidance and are curved in a siphon-like manner in this region so as to be directed into the interior of the loop structure, wherein the conductors in respective siphon-like troughs intersect each other perpendicularly,

Abstract: An arrangement for testing an elongated body 1 or a welded and bonded joint in the body for faults 60 has a device 4, 5 for production of an eddy current in the elongated body 1 or its welded and bonded joint. At least one magnetic field sensor 7 for sensing the magnetic field is provided on the elongated body 1 or the welded and bonded joint. The dimensions of the at least one magnetic field sensor 7 are equal to or less than the fault 60 to be investigated.

Abstract: A magnetic revolution counter for the unambiguous determination of a definable number of revolutions of a rotating element to be determined. The aim of creating such a revolution counter allowing a determination of any arbitrarily definable number of revolutions, for example up to values of N>4000 or more as defined, and enabling a cost-effective and small design, is achieved in that a plurality of sensor elements (30a to 30e) are provided, which are formed by closed loops having magnetic domains attached and guiding the same, containing at least one ferromagnetic, respectively soft magnetic, layer.

Abstract: A magnetic revolution counter for the unambiguous determination of a definable number of revolutions of a rotating element to be determined. The aim of creating such a revolution counter allowing a determination of any arbitrarily definable number of revolutions, for example up to values of N>4000 or more as defined, and enabling a cost-effective and small design, is achieved in that a plurality of sensor elements (30a to 30e) are provided, which are formed by closed loops having magnetic domains attached and guiding the same, containing at least one ferromagnetic, respectively soft magnetic, layer.

Abstract: A sensor element for a revolution counter includes a laminated structure suitable to cause a change in magnetisation in the sensor element without a power supply, simply by the displacement of a magnetic field past the sensor element. Moreover, the laminated structure is suitable for storing a plurality of such changes. The sensor element has a spiral structure.

Abstract: An arrangement for testing an elongated body 1 or a welded and bonded joint in the body for faults 60 has a device 4, 5 for production of an eddy current in the elongated body 1 or its welded and bonded joint. At least one magnetic field sensor 7 for sensing the magnetic field is provided on the elongated body 1 or the welded and bonded joint. The dimensions of the at least one magnetic field sensor 7 are equal to or less than the fault 60 to be investigated.

Abstract: A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein the reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, the magnetic moments of the bias layer system and of the reference layer being coupled in opposite directions via a coupling layer.

Abstract: A sensor element for a revolution counter includes a laminated structure suitable to cause a change in magnetisation in the sensor element without a power supply, simply by the displacement of a magnetic field past the sensor element. Moreover, the laminated structure is suitable for storing a plurality of such changes. The sensor element has a spiral structure.

Abstract: The invention concerns a sensor element (11) designed in particular for a revolution counter (10). It is possible to pass a magnetic field in front of said sensor element (11). The latter (11) has a laminated structure (2) and a shape (30) such that power supply is not needed to cause a modification of magnetization in the sensor element (11) when the magnetic field passes in front thereof, and in that several such modifications can be stored.

Abstract: The invention concerns a sensor element (11) designed in particular for a revolution counter (10). It is possible to pass a magnetic field in front of said sensor element (11). The latter (11) has a laminated structure (20) and a shape (30) such that power supply is not needed to cause a modification of magnetization in the sensor element (11) when the magnetic field passes in front thereof, and in that several such modifications can be stored.

Abstract: The invention relates to a Wheatstone bridge containing bridge elements that are connected in a conventional manner and consisting of a spin-valve system, in addition to a method for producing the same. The aim of the invention is to produce a Wheatstone bridge, in which respective half-bridges lying adjacent to one another have a respective non-parallel bias magnetisation direction. To achieve this, the respective bridge elements that are not adjacent (1, 3 or 2, 4) are provided with a doping of implantable ions in quantities of between 1.1012 and 5.1016 atoms/cm2 beneath the pinned ferromagnetic layer of a GMR- or TMR-spin-valve layer system.

Abstract: A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein the reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, the magnetic moments of the bias layer system and of the reference layer being coupled in opposite directions via a coupling layer.

Abstract: The invention relates to a Wheatstone bridge containing bridge elements that are connected in a conventional manner and consisting of a spin-valve system, in addition to a method for producing the same. The aim of the invention is to produce a Wheatstone bridge, in which respective half-bridges lying adjacent to one another have a respective non-parallel bias magnetisation direction. To achieve this, the respective bridge elements that are not adjacent (1, 3 or 2, 4) are provided with a doping of implantable ions in quantities of between 1.1012 and 5.1016 atoms/cm2 beneath the pinned ferromagnetic layer of a GMR- or TMR-spin-valve layer system.

Abstract: A method for setting the magnetization of at least one bias layer of a magnetoresistive sensor element, the bias layer being part of an artificial antiferromagnetic system including at least one bias layer, at least one flux conducting layer and at least one coupling layer provided therebetween and coupling the two layers antiferromagnetically, includes the steps of heating or cooling the sensor element above or below a predetermined temperature, applying a magnetic setting field during and/or after the heating or cooling, switching off the setting field after a predetermined time, and returning the temperature to the initial temperature. A sensor configuration and a sensor substrate are also provided.

Abstract: A sensor for sensing at least one of angular position and rotation speed comprises a permanent magnet rotatable about an axis of rotation and at least three Wheatstone bridges each having four bridge resistors formed of magnetoresistive strip lines extending in planes parallel to a rotation plane of the permanent magnet. The bridge resistors of each of the at least three Wheatstone bridges are disposed on respective sides of quadrangles corresponding to respective ones of the at least three Wheatstone bridges. Each of the at least three Wheatstone bridges has two adjacently arranged ones of the bridge resistors connected to a half-bridge of respective ones of the at least three Wheatstone bridges. The quadrangles are disposed relative to one another rotated by a preselectable angle .alpha..