Patents by Inventor Roland Rubner

Roland Rubner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5108860
    Abstract: An electrophotographic recording material is applied on a plate-shaped or drum-shaped substrate in a layer structure of superposed layers which comprises a photoconductive layer and at least the uppermost layer is fashioned of amorphous, hydrogen-containing carbon. The amorphous, hydrogen-containing carbon layer is deposited from a radio frequency excited low-pressure plasma with gaseous hydrocarbon as a reaction gas and in which a self-bias DC voltage is superimposed on the radio frequency field. The a-c:H material obtained in this manner is semiconducting and has photoconductive properties so that it can be employed for the photoconductive layer of the electrophotographic recording material.
    Type: Grant
    Filed: July 16, 1990
    Date of Patent: April 28, 1992
    Assignee: Siemens Aktiengesellschaft
    Inventors: Siegfried Birkle, Johann Kammermaier, Roland Rubner
  • Patent number: 4619500
    Abstract: The invention relates to a method for the production of orientation layers for liquid crystal displays by applying a solution of an organic prepolymer to a transparent substrate and subsequently annealing the layer and subjecting it to an orientation treatment, wherein prepolymers of polyoxazoles, polythiazoles, polyimidazoles, polyoxazinones, polyoxazine diones or polyquinoxalines are used as the organic prepolymer. The method is particularly suitable for the preparation of orientation layers for glass-solder liquid crystal displays.
    Type: Grant
    Filed: January 10, 1986
    Date of Patent: October 28, 1986
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Hans Kruger, Roland Rubner
  • Patent number: 4590103
    Abstract: The invention relates to a method for the preparation of thin polyimide layers by applying a solution of a polyimide prepolymer to a substrate, and subsequently annealing, and has as its object the provision of a method of this type in such a way that the preparation of layers with layer thicknesses of .ltoreq.0.2 .mu.m is made possible which layers have a homogeneous character and exhibit good adhesion. For this purpose, the invention provides that film-forming prepolymers of highly heat-resistant polyimides are used which prepolymers give off a high percentage of volatile products in annealing. The method according to the invention is particularly suitable for the production of orientation layers for liquid-crystal displays.
    Type: Grant
    Filed: June 20, 1984
    Date of Patent: May 20, 1986
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Wolfgang Kleeberg, Roland Rubner, Hans Kruger
  • Patent number: 4514043
    Abstract: The invention relates to a method for the preparation of orientation layers for liquid crystal displays wherein a solution of an organic prepolymer is applied to a transparent substrate, and the prepolymer is then annealed to result in the desired polymer, which is then subjected to an orientation treatment, and has the objective to develop a method of this type in such a manner that it is possible to prepare orientation layers which can be highly stressed thermally and are dimensionally stable, i.e., are not subject to changes of morphological structure even at temperatures of .gtoreq.420.degree. C. For this purpose, the invention employs prepolymers of polyquinazoline diones or polyisoindoloquinazoline diones. The method according to the invention is suited in particular for the preparation of orientation layers for glass solder, liquid crystal displays.
    Type: Grant
    Filed: February 22, 1982
    Date of Patent: April 30, 1985
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Hans Kruger, Roland Rubner
  • Patent number: 4469408
    Abstract: Liquid crystal display with a liquid crystal layer which can be switched between two optically different states. Two support plates have the surfaces facing each other coated with an electrically conducting layer as well as an orientation layer with at least one orientation layer consisting of a polymer. The plates enclose the liquid-crystal layer. The polymer is liquid-crystalline and can be switched to the off-state and on-state--in the process of which it generates the rest state of the liquid-crystal layer in the off-condition and, in the on-condition, at least enhances the excited state of the liquid-crystal layer.
    Type: Grant
    Filed: May 20, 1981
    Date of Patent: September 4, 1984
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans Kruger, Roland Rubner
  • Patent number: 4446266
    Abstract: The invention relates to the use of N,N'-bis-salicyloyl hydrazine as a metal deactivator for organic materials which are in contact with copper or contain copper or copper ions, and has the object of providing an N,N'-bis-salicyloyl hydrazine which allows processing without danger on an industrial scale. For this purpose, the invention provides an N,N'-bis-salicyloyl hydrazine which is prepared from salicylic-acid alkyl ester and either hydrazine or salicylic-acid hydrazide. N,N'-bis-salicyloyl hydrazine prepared in this manner serves particularly as a metal deactivator in cable and wire insulation for power and communications engineering.
    Type: Grant
    Filed: July 29, 1980
    Date of Patent: May 1, 1984
    Assignee: Siemens Aktiengesellschaft
    Inventors: Wolfgang von Gentzkow, Roland Rubner
  • Patent number: 4405707
    Abstract: Relief structures comprised of double lacquer layers on substrates already having relief structures for integrated semiconductor circuits are produced by applying a lower lacquer layer onto such substrate and which is composed of a material which does not cross-link or decompose due to radiation energy and which has only relatively slight sensitivity at the radiation energy dosage range utilized for structuring; applying an upper lacquer layer onto the lower lacquer layer and which upper layer is thinner relative to the thickness of the lower layer by a factor of at least 2 and is composed of a highly sensitive negative lacquer material; generating desired relief structures in the upper lacquer layer and removing those portions of the lower lacquer which are not covered by the upper negative lacquer layer.
    Type: Grant
    Filed: July 16, 1981
    Date of Patent: September 20, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hartwig Bierhenke, Siegfried Birkle, Roland Rubner
  • Patent number: 4397999
    Abstract: The present invention relates to oligomeric and/or polymeric precursor stages of polyimidazoles and polyimidazopyrrolones, as well as to a method for preparing these new precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides. The radiation-reactive precursor stages according to the invention are suited, for example, for the preparation of highly heat-resistant relief structures.
    Type: Grant
    Filed: August 19, 1980
    Date of Patent: August 9, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4398009
    Abstract: The invention relates to oligomeric and/or polymeric precursor stages of polyoxazoles, as well as to a method for the preparation of these precursor stages. New radiation-reactive polymer precursor stages are provided comprised of addition products of olefinically unsaturated monoepoxides on hydroxyl group-containing polycondensation products of aromatic and/or heterocyclic dihydroxy diamino compounds with dicarboxylic-acid chlorides or esters. The radiation-reactive precursor stages according to the invention are suitable, for example, for the preparation of highly heat-resistant relief structures and as coatings for the optical fibers of light waveguides.
    Type: Grant
    Filed: August 19, 1980
    Date of Patent: August 9, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4395481
    Abstract: The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.
    Type: Grant
    Filed: September 25, 1981
    Date of Patent: July 26, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Siegfried Birkle, Roland Rubner, Hans Hauschildt, Eva-Maria Rissel
  • Patent number: 4395482
    Abstract: The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.
    Type: Grant
    Filed: April 28, 1982
    Date of Patent: July 26, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4385165
    Abstract: The present invention relates to oligomeric and/or polymeric radiation-reactive precursor stages of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones as well as to a method for the preparation of these radiation-reactive precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic-acid dianhydrides and diamino compounds or diamino compounds with at least one ortho-position amido group, or on carboxyl group-containing polyaddition products of aromatic and/or heterocyclic dihdyroxy dicarboxylic acids or corresponding diaminodicarboxylic acids and diisocyanates. The radiation-reactive precursor stages according to the invention are suitable, for example, for the manufacture of highly heat-resistant relief structures.
    Type: Grant
    Filed: August 19, 1980
    Date of Patent: May 24, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4371685
    Abstract: The invention relates to oligomeric and/or polymeric radiation-reactive precursor stages of polymers on the basis of heterocycles and has the objective to make available radiation-reactive precursor stages of this kind in which the problems arising due to the need of using organic solvents are eliminated. For this purpose, the invention provides addition products of cyclic carboxylic-acid anhydrides with hydroxyl group-containing compounds, where the hydroxyl group-containing compounds represent addition products of olefinically unsaturated monoepoxides on carboxyl group-containing prepolymers of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones or on amino group-containing prepolymers of polyimidazoles and polyimidazopyrrolones or on hydroxyl group-containing prepolymers of polyoxazoles. The radiation-reactive precursor stages according to the invention are suited, for example, for the manufacture of highly heat-resistant relief structues.
    Type: Grant
    Filed: June 4, 1981
    Date of Patent: February 1, 1983
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4366230
    Abstract: The invention relates to a method for the preparation of highly heat-resistant relief structures with a base of polymers of heterocyclic structure by applying radiation-sensitive soluble polymer precursor stages in the form of a film or foil to a substrate, irradiating the film or foil through negative patterns with actinic light or by deflecting a light, electron or ion beam, removing the non-irradiated film or foil portions and, optionally, by subsequent annealing, as well as to the use of relief structures prepared in this manner.
    Type: Grant
    Filed: June 4, 1981
    Date of Patent: December 28, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4339521
    Abstract: The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.
    Type: Grant
    Filed: July 18, 1980
    Date of Patent: July 13, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4332883
    Abstract: Disclosed herein is a method for the preparation of highly heat-resistant relief structures by applying radiation-sensitive soluble polymer precursor stages in the form of a layer or a foil to a substrate; irradiating the layer or foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated layer or foil portions and, optionally, subsequently annealing, as well as to the use of the relief structures made in this manner. An object of the invention is to broaden the supply of highly heat-resistant relief structures, and for this purpose it is provided to use precursor stages of polyoxazoles in the form of addition products of olefinically unsaturated monoepoxides on hydroxyl group-containing polycondensation products of aromatic and/or heterocyclic dihydroxy diamino compounds with dicarboxylic-acid chlorides or esters.
    Type: Grant
    Filed: August 19, 1980
    Date of Patent: June 1, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner, Erwin Schmidt
  • Patent number: 4332882
    Abstract: The present invention relates to a method for the preparation of highly heat-resistant relief structures by applying radiation-sensitive soluble polymer precursor stages in the form of a film or a foil to a substrate; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions; and optionally, by subsequent annealing; as well as to the use of the relief structures made in this manner. It is provided for this purpose to use precursor stages of polyimidazoles and polyimidazopyrrolones in the form of addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters, or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides.
    Type: Grant
    Filed: August 19, 1980
    Date of Patent: June 1, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner
  • Patent number: 4329556
    Abstract: The invention relates to new arylsulfonylazides as well as the use of these compounds. The new compounds are characterized by the general formula: ##STR1## where R=aryl; x=1 or 2; and R.sup.1 and R.sup.2 are selected from H, CH.sub.3 and Cl and may be the same or different, with the provision that CH.sub.3 and Cl are not present side by side. The compounds according to the invention are suitable as photoinitiators in the preparation of relief structures by phototechniques from olefinically unsaturated polymers, as well as cross-link enhancing agents in the radical-wise cross linking of thermoplastic polymers.
    Type: Grant
    Filed: May 9, 1980
    Date of Patent: May 11, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Roland Rubner, Eberhard Kuhn, Hellmut Ahne
  • Patent number: 4311785
    Abstract: The invention relates to a method for the preparation of highly heat-resistant relief structures on the basis of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones by applying radiation-sensitive soluble polymer precursor stages to a substrate in the form of a film or a foil; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions and optionally, by subsequent annealing; as well as the use of relief structures so prepared. It is an object of the invention to simplify the preparation of relief structures of the type mentioned.
    Type: Grant
    Filed: August 19, 1980
    Date of Patent: January 19, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Eberhard Kuhn, Roland Rubner, Erwin Schmidt
  • Patent number: 4302233
    Abstract: The present invention relates to a method for the manufacture of a high-tensile-strength light waveguide with a plastic layer on the optical fiber, in which a hardenable polymer precursor stage is applied to the optical fiber. Uniform, thick layers are produced in a single operation in a process comprising applying an oligomeric and/or polymeric polyaddition or polycondensation product to the optical fiber from a solution and subsequently irradiating with actinic light and/or performing a thermal treatment. The polyaddition or polycondensation product is made from a carbocyclic or heterocyclic compound which carries two functional groups suitable for addition or condensation reactions, and a diamine, a diisocyanate, a bis-acid chloride or a dicarboxylic acid. The carbocyclic or heterocyclic compound has in a position adjacent to the functional groups partially ester, amide, urethane or urea groupings which may be of an unsaturated nature.
    Type: Grant
    Filed: August 19, 1980
    Date of Patent: November 24, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Hubert Aulich, Friedrich Weidinger, Roland Rubner