Abstract: The invention concerns a method for production of components comprising a Schottky diode by means of printing technology. The method involves a step of application and deposition of a semiconductor-nanoparticle dispersion on a first electrode, which is disposed on a substrate, the step of exposure to laser light of the deposited semiconductor-nanoparticle dispersion to form a mu-cone with a bottom and a tip, wherein the bottom of the mu-cone is joined to the first electrode, the step of embedding the thus-formed mu-cone in an electrically insulating polymer matrix, and the step of applying a second electrode, so that the tip of the mu-cone is joined to the second electrode.

Abstract: The invention concerns a method for production of components comprising a Schottky diode by means of printing technology. The method involves a step of application and deposition of a semiconductor-nanoparticle dispersion on a first electrode, which is disposed on a substrate, the step of exposure to laser light of the deposited semiconductor-nanoparticle dispersion to form a mu-cone with a bottom and a tip, wherein the bottom of the mu-cone is joined to the first electrode, the step of embedding the thus-formed mu-cone in an electrically insulating polymer matrix, and the step of applying a second electrode, so that the tip of the mu-cone is joined to the second electrode.

Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Abstract: An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Abstract: An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Abstract: An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Abstract: Described are oligotetracenes of formula I which may either be unsubstituted or carry one or more substituents R and R? which are selected from the group comprising halogen, CN, alkyl or alkoxy radicals containing 1 to 18 carbon atoms, aryl radicals containing up to 10 carbon atoms which may also contain one or more heteroatoms, and/or fluorinated or perfluorinated alkyl or alkoxy radicals containing 1 to 18 carbon atoms, where n is an integer from 1 to 20, preferably 1 to 6, very particularly preferably 1 or 2, and X stands for a single bond, an alklyene group containing 1 to 6 carbon atoms, a hydrocarbon chain having one or more conjugated double bonds, an aryl group, or a system composed of one or more condensed aromatic rings. In the oligotetracenes according to the invention, one or more of the condensed aromatic six-atom rings may be substituted by a five-atom ring which may also contain a heteroatom.

Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Abstract: Described are oligotetracenes of formula I which may either be unsubstituted or carry one or more substituents R and R? which are selected from the group comprising halogen, CN, alkyl or alkoxy radicals containing 1 to 18 carbon atoms, aryl radicals containing up to 10 carbon atoms which may also contain one or more heteroatoms, and/or fluorinated or perfluorinated alkyl or alkoxy radicals containing 1 to 18 carbon atoms, where n is an integer from 1 to 20, preferably 1 to 6, very particularly preferably 1 or 2, and X stands for a single bond, an alklyene group containing 1 to 6 carbon atoms, a hydrocarbon chain having one or more conjugated double bonds, an aryl group, or a system composed of one or more condensed aromatic rings. In the oligotetracenes according to the invention, one or more of the condensed aromatic six-atom rings may be substituted by a five-atom ring which may also contain a heteroatom.

Abstract: An electroluminescence generating device comprising e. a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; f. an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; g. a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; h. a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.