Abstract: Systems and methods for heat treating closed shape workpieces are provided. In one example implementation, a method can include imparting relative motion of the closed shape workpiece such that the perimeter surface of the closed shape workpiece is moved relative to the lamp heat source from a first position where a first portion of the closed shape workpiece is presented to the lamp heat source to a second position where a second portion of the closed shape workpiece is presented to the lamp heat source. The method can include emitting lamp heat onto the perimeter surface of the closed shape workpiece from the lamp heat source during imparting of relative motion of the closed shape workpiece. The method can include implementing a flux control procedure during emitting of lamp heat onto the perimeter surface of the closed shape workpiece.

Abstract: Systems and methods for reducing contamination of one or more arc lamps are provided. One example implementation is directed to a millisecond anneal system. The millisecond anneal system includes a processing chamber for thermally treating a substrate using a millisecond anneal process. The system further includes one or more arc lamps. Each of the one or more arc lamps is coupled to a water loop for circulating water through the arc lamp during operation of the arc lamp. The system includes a reagent injection source configured to introduce a reagent, such as nitrogen gas, into water circulating through the arc lamp during operation of the arc lamp.

Abstract: A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors.

Abstract: Support plates and support structures for thermal processing systems to heat workpieces are provided. In one example, a thermal processing apparatus is provided that includes a plurality of heat sources, a rotatable support plate, and a support structure having a flexibility in the radial direction of the rotatable support plate that is greater than a flexibility in the azimuthal direction of the rotatable support plate. Also provided are support plates for supporting a workpiece in a thermal processing apparatus. The support plate can include a base defining a radial direction and an azimuthal direction and at least one support structure extending from the base having a flexibility in the radial direction of the base that is greater than a flexibility in the azimuthal direction of the base.

Abstract: Systems and methods for reducing contamination of one or more arc lamps are provided. One example implementation is directed to a millisecond anneal system. The millisecond anneal system includes a processing chamber for thermally treating a substrate using a millisecond anneal process. The system further includes one or more arc lamps. Each of the one or more arc lamps is coupled to a water loop for circulating water through the arc lamp during operation of the arc lamp. The system includes a reagent injection source configured to introduce a reagent, such as nitrogen gas, into water circulating through the arc lamp during operation of the arc lamp.

Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example, the system includes a processing chamber. The system includes a workpiece support configured to support a workpiece within the processing chamber. The system includes a heat source configured to emit light toward the workpiece. The system includes a shutter disposed between the workpiece and the heat source. The shutter includes an electrochromic material configurable in a translucent state and an opaque state. When the electrochromic material is configured in the opaque state, the shutter reduces transmission of the light through the shutter, and when the electrochromic material is configured in the translucent state, the light at least partially passes through the shutter. The system includes a controller configured to control the shutter to reduce transmission of light through the shutter during a thermal treatment process.

Abstract: Systems and methods for thermal processing of a workpiece at low temperatures are disclosed. In one example implementation, a thermal processing apparatus includes a processing chamber having a workpiece support. The workpiece support can be configured to support a workpiece. The apparatus can include one or more heat sources configured to emit electromagnetic radiation in a first wavelength range to heat the workpiece to a processing temperature. The processing temperature can be in the range of about 50° C. to 150° C. The apparatus can include one or more sensors configured to obtain a measurement of electromagnetic radiation in a second wavelength range when the workpiece is at the processing temperature. The second wavelength range can be different from the first wavelength range.

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., arears proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

Abstract: Systems and methods for heat treating closed shape workpieces are provided. In one example implementation, a method can include imparting relative motion of the closed shape workpiece such that the perimeter surface of the closed shape workpiece is moved relative to the lamp heat source from a first position where a first portion of the closed shape workpiece is presented to the lamp heat source to a second position where a second portion of the closed shape workpiece is presented to the lamp heat source. The method can include emitting lamp heat onto the perimeter surface of the closed shape workpiece from the lamp heat source during imparting of relative motion of the closed shape workpiece. The method can include implementing a flux control procedure during emitting of lamp heat onto the perimeter surface of the closed shape workpiece.

Abstract: Systems and methods for reducing contamination of one or more arc lamps are provided. One example implementation is directed to a millisecond anneal system. The millisecond anneal system includes a processing chamber for thermally treating a substrate using a millisecond anneal process. The system further includes one or more arc lamps. Each of the one or more arc lamps is coupled to a water loop for circulating water through the arc lamp during operation of the arc lamp. The system includes a reagent injection source configured to introduce a reagent, such as nitrogen gas, into water circulating through the arc lamp during operation of the arc lamp.

Abstract: Electrode tips for arc lamps for use in, for instance, a millisecond anneal system are provided. In one example implementation, an electrode for an arc lamp can have an electrode tip. The surface of the electrode tip can have one or more grooves to reduce the transportation of molten material across the surface of the electrode tip. The electrode can include an interface between the electrode tip and a heat sink. The interface can have a shape designed to have a desired lateral temperature distribution across the surface of the electrode tip.

Abstract: A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.

Abstract: A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.