Abstract: The present invention relates to an optical device and a method of in situ treating an optical component (2, 6, 13) reflecting EUV and/or soft X-ray radiation in said optical device, said optical component (2, 6, 13) being arranged in a vacuum chamber (14) of said optical device and comprising one or several reflecting surfaces (3) having a top layer of one or several surface materials. In the method, a source (1, 5) of said one or several surface materials is provided in said chamber (14) of said optical device and surface material from said source (1, 5) is deposited on said one or several reflecting surfaces (3) during operation and/or during operation-pauses of said optical device in order to cover or substitute deposited contaminant material and/or to compensate for ablated surface material.

Abstract: Disclosed herein a rotational type foil trap that is capable of avoiding the transmission rate of the EUV light to be lowered even when the EUV light source operates with the high input power and also suppressing the temperature increase of the foil to attain a sufficient life duration. In the rotational type foil trap, one end of each of foils is inserted into each of a plurality of grooves provided on a side face of a center support, and the center support and the each of the foils are fixed together by brazing.

Abstract: Disclosed herein a rotational type foil trap that is capable of avoiding the transmission rate of the EUV light to be lowered even when the EUV light source operates with the high input power and also suppressing the temperature increase of the foil to attain a sufficient life duration. In the rotational type foil trap, one end of each of foils is inserted into each of a plurality of grooves provided on a side face of a center support, and the center support and the each of the foils are fixed together by brazing.

Abstract: The present invention relates to an optical device and a method of in situ treating an optical component (2, 6, 13) reflecting EUV and/or soft X-ray radiation in said optical device, said optical component (2, 6, 13) being arranged in a vacuum chamber (14) of said optical device and comprising one or several reflecting surfaces (3) having a top layer of one or several surface materials. In the method, a source (1, 5) of said one or several surface materials is provided in said chamber (14) of said optical device and surface material from said source (1, 5) is deposited on said one or several reflecting surfaces (3) during operation and/or during operation-pauses of said optical device in order to cover or substitute deposited contaminant material and/or to compensate for ablated surface material.

Abstract: A method of in situ treating an optical component reflecting EUV and/or soft X-ray radiation in an optical device includes providing at least one source of one or several surface materials in a vacuum chamber of the optical device where the optical component is arranged. The optical component includes one or several reflecting surfaces having a top layer of one or several surface materials. The method includes providing a source of the one or several surface materials in the chamber, and depositing surface material from the source on the one or several reflecting surfaces during operation and/or during operation-pauses of the optical device in order to cover or substitute deposited contaminant material and/or to compensate for ablated surface material.

Abstract: The present invention relates to an electrode system, in particular of a gas discharge device for generating EUV radiation and/or soft X-rays. The electrode system comprises at least two electrodes (1, 2) formed of an electrode material which contains Mo or W or an alloy of Mo or W as a main component. The electrode material has a fine grained structure with fine grains having a mean size of <500 nm. With the proposed electrode system, a high thermo-mechanical and thermo-chemical resistance of the electrodes is achieved. The electrode system can therefore be used in known EUV light sources using liquid Sn and being operated at high temperatures.

Abstract: The present invention relates to an electrode system, in particular of a gas discharge device for generating EUV radiation and/or soft X-rays. The electrode system comprises at least two electrodes (1, 2) formed of an electrode material which contains Mo or W or an alloy of Mo or W as a main component. The electrode material has a fine grained structure with fine grains having a mean size of <500 nm. With the proposed electrode system, a high thermo-mechanical and thermo-chemical resistance of the electrodes is achieved. The electrode system can therefore be used in known EUV light sources using liquid Sn and being operated at high temperatures.

Abstract: A method of generating in particular EUV radiation (12) and/or soft X-ray radiation (12a) emitted by a plasma (26) is described. The plasma (26) is formed by an operating gas (22) in a discharge space (14) which comprises at least one radiation emission window (16) and an electrode system with at least one anode (18) and at least one cathode (20). This electrode system transmits electrical energy to the plasma (26) by means of charge carriers (24) introduced into the discharge space (14). It is suggested for obtaining a reliable ignition of the plasma (26) at high repetition frequencies that a radiation (30) generated by at least one radiation source (28) is introduced into the discharge space (14) for making available the discharge carriers (24).

Abstract: The present invention relates to an optical device and a method of in situ treating an optical component (2, 6, 13) reflecting EUV and/or soft X-ray radiation in said optical device, said optical component (2, 6, 13) being arranged in a vacuum chamber (14) of said optical device and comprising one or several reflecting surfaces (3) having a top layer of one or several surface materials. In the method, a source (1, 5) of said one or several surface materials is provided in said chamber (14) of said optical device and surface material from said source (1, 5) is deposited on said one or several reflecting surfaces (3) during operation and/or during operation-pauses of said optical device in order to cover or substitute deposited contaminant material and/or to compensate for ablated surface material.

Abstract: A method of cleaning at least one surface of an optical device disposed in a vacuum chamber, which is at least partially contaminated by atoms and/or ions of metalloid and/or metal introduced by a radiation source generating, such as extreme ultraviolet radiation and/or soft X-rays is described. In order to achieve a longer service life for the optical device, the method is designed such that a temperature prevailing on the surface and/or a pressure in the vacuum chamber is adjusted in such a way that the atoms and/or ions hitting the surface are removed.

Abstract: A method of generating in particular EUV radiation (12) and/or soft X-ray radiation (12a) emitted by a plasma (26) is described. The plasma (26) is formed by an operating gas (22) in a discharge space (14) which comprises at least one radiation emission window (16) and an electrode system with at least one anode (18) and at least one cathode (20). This electrode system transmits electrical energy to the plasma (26) by means of charge carriers (24) introduced into the discharge space (14). It is suggested for obtaining a reliable ignition of the plasma (26) at high repetition frequencies that a radiation (30) generated by at least one radiation source (28) is introduced into the discharge space (14) for making available the discharge carriers (24).

Abstract: The present invention relates to highly dense translucent and transparent aluminium oxide components for applications, e.g. in the lighting industry, where a fine crystal size has to be obtained and stabilized for use at temperatures of 800° C. or more. Disclosed are high-strength polycrystalline alumina products which include 0.001-0.5 weight-% ZrO2 stabilizing a fine crystal size <2 ?m or, preferably, <1 ?m if used at temperatures of 800° C. or more. The microstructure exhibits an extremely high relative density enabling a high real in-line transmission >30% measured over an angular aperture of at most 0.5° at a sample thickness of 0.8 mm and with a monochromatic wavelength of light ?, preferably, of 645 nm.