Abstract: A miniaturized SQUID module (10), notably for multi-channel magnetometers, for measurement of varying magnetic fields in a field strength range below 10.sup.-10 T, includes superconducting and shielded connections between a SQUID chip (19) and a gradiometer (12). The module can be mounted in the lower part of a cryostat and enables a large number of measurement points per unit of surface area. The SQUID chip (19) is arranged on a fully shielded supporting plate (18) which has a width of only a few millimeters and which is provided with electronic circuitry (23), the SQUID chip (19) being connected in a superconducting manner, at least by soldering, to the wires (11) of the gradiometer (12) via a superconducting, solderable and bondable intermediate support (27).

Abstract: The invention relates to a method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body. First an insulating layer is formed on the silicon body and then a polycrystalline silicon layer is deposited. To the deposited polycrystalline silicon layer is applied a further polycrystalline silicon layer having a crystallite structure coarser with respect to that of the first polycrystalline silicon layer. The two polycrystalline silicon layers are additionally doped.

Abstract: A pressure sensor comprising a silicon body (1) which is arranged on a substrate (2). The silicon body (1) comprises a cavity (4) in the form of a blind hole, or enclosed chamber which thus forms a diaphragm (5). On the outer surface thereof there is arranged a Wheatstone bridge consisting of piezoresistive resistance elements (6, 7, 8, 9). The voltage/pressure characteristic of this pressure sensor exhibits a non-linearity of more than 1% in the case of pressure loads in excess of 250 bar. This non-linearity must be reduced. Therefore, a further cavity (10) is provided in the silicon body (1) on both sides of the resistance elements (8, 9) arranged at the edge of the diaphragm (5).

Abstract: The invention relates to a method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body. First an insulating layer is formed on the silicon body and then a polycrystalline silicon layer is deposited. To the deposited polycrystalline silicon layer is applied a further polycrystalline silicon layer having a crystallite structure coarser with respect to that of the first polycrystalline silicon layer. The two polycrystalline silicon layers are additionally doped. The invention further relates to a silicon pressure sensor having such a resistance layer.

Abstract: The invention relates to a method for the force-coupled and vacuum-tight bonding of components of ceramic material together or to metallic components by means of thermocompression while using a soldering material in the form of an AlMgZn alloy provided between the components to be bonded prior to the thermocompression process. The soldering material used consists preferably of an aluminum-zinc-magnesium alloy having 95% by weight of Al, 4% by weight of Zn and 1% by weight of Mg.

Abstract: A differential pressure transducer having a body of insulating material on which film electrodes are fixed, two diaphragms made of insulating material, and two film electrodes on the inner sides of the respective diaphragms facing the body. The diaphragms and the body together form cavities which are filled with an incompressible liquid, and the film electrodes of the body and of the diaphragms form capacitances which are dependent on the diaphragm deflection. The transducer is especially suitable for the measurement of the flow rate of explosive liquids or gasses.