Patents by Inventor Roman Kris
Roman Kris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230420308Abstract: A system of examination of a semiconductor specimen, comprising a processor and memory circuitry (PMC) configured to: obtain an image of a hole formed in the semiconductor specimen, wherein the hole exposes at least one layer of a plurality of layers of the semiconductor specimen, segment the image into a plurality of regions, generate at least one of: data Dpix_intensity informative of one or more pixel intensities of one or more regions of the plurality of regions, data Dgeometry informative of one or more geometrical properties of one or more regions of the plurality of regions, feed at least one of Dpix_intensity or Dgeometry to a trained classifier to obtain an output, wherein the output of the trained classifier is usable to determine whether the hole ends at a target layer of the plurality of layers.Type: ApplicationFiled: June 23, 2022Publication date: December 28, 2023Inventors: Rafael BISTRITZER, Vadim VERESCHAGIN, Grigory KLEBANOV, Roman KRIS, Ilan BEN-HARUSH, Omer KEREM, Asaf GOLOV, Elad SOMMER
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Patent number: 11756188Abstract: Input data may be received. The input data may include an image of a pattern and location data that identifies a modified portion of the pattern. A processing device may determine a first parameter of a first dimension within the pattern and a second parameter of a second dimension outside of the pattern. A combined set may be generated based on the first parameter and the second parameter. A defect associated with the modified portion may be classified based on the combined set.Type: GrantFiled: March 14, 2022Date of Patent: September 12, 2023Assignee: Applied Materials Israel Ltd.Inventors: Vadim Vereschagin, Roman Kris, Ishai Schwarzband, Boaz Cohen, Evgeny Bal, Ariel Shkalim
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Patent number: 11686571Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.Type: GrantFiled: September 2, 2021Date of Patent: June 27, 2023Assignee: Applied Materials Israel Ltd.Inventors: Roman Kris, Ilan Ben-Harush, Rafael Bistritzer, Vadim Vereschagin, Elad Sommer, Grigory Klebanov, Arundeepth Thamarassery, Jannelle Anna Geva, Gal Daniel Gutterman, Einat Frishman, Sahar Levin
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Patent number: 11651509Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.Type: GrantFiled: October 31, 2019Date of Patent: May 16, 2023Assignee: Applied Materials Israel Ltd.Inventors: Roman Kris, Roi Meir, Sahar Levin, Ishai Schwarzband, Grigory Klebanov, Shimon Levi, Efrat Noifeld, Hiroshi Miroku, Taku Yoshizawa, Kasturi Saha, Sharon Duvdevani-Bar, Vadim Vereschagin
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Publication number: 20230069303Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.Type: ApplicationFiled: September 2, 2021Publication date: March 2, 2023Inventors: Roman KRIS, Ilan BEN-HARUSH, Rafael BISTRITZER, Vadim VERESCHAGIN, Elad SOMMER, Grigory KLEBANOV, Arundeepth THAMARASSERY, Jannelle Anna GEVA, Gal Daniel GUTTERMAN, Einat FRISHMAN, Sahar LEVIN
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Patent number: 11476081Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.Type: GrantFiled: June 30, 2020Date of Patent: October 18, 2022Assignee: APPLIED MATERIALS ISRAEL LTD.Inventors: Roman Kris, Vadim Vereschagin, Assaf Shamir, Elad Sommer, Sharon Duvdevani-Bar, Meng Li Cecilia Lim
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Patent number: 11455715Abstract: There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.Type: GrantFiled: February 16, 2021Date of Patent: September 27, 2022Assignee: APPLIED MATERIALS ISRAEL LTD.Inventors: Jitendra Pradipkumar Chaudhary, Roman Kris, Ran Alkoken, Sahar Levin, Chih-Chieh Chang, Einat Frishman
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Patent number: 11443420Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.Type: GrantFiled: December 28, 2020Date of Patent: September 13, 2022Assignee: Applied Materials Israel Ltd.Inventors: Roman Kris, Grigory Klebanov, Einat Frishman, Tal Orenstein, Meir Vengrover, Noa Marom, Ilan Ben-Harush, Rafael Bistritzer, Sharon Duvdevani-Bar
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Publication number: 20220261979Abstract: There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.Type: ApplicationFiled: February 16, 2021Publication date: August 18, 2022Inventors: Jitendra Pradipkumar CHAUDHARY, Roman KRIS, Ran ALKOKEN, Sahar LEVIN, Chih-Chieh CHANG, Einat FRISHMAN
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Publication number: 20220207681Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.Type: ApplicationFiled: December 28, 2020Publication date: June 30, 2022Inventors: Roman KRIS, Grigory KLEBANOV, Einat FRISHMAN, Tal ORENSTEIN, Meir VENGROVER, Noa MAROM, Ilan BEN-HARUSH, Rafael BISTRITZER, Sharon DUVDEVANI-BAR
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Publication number: 20220198639Abstract: Input data may be received. The input data may include an image of a pattern and location data that identifies a modified portion of the pattern. A processing device may determine a first parameter of a first dimension within the pattern and a second parameter of a second dimension outside of the pattern. A combined set may be generated based on the first parameter and the second parameter. A defect associated with the modified portion may be classified based on the combined set.Type: ApplicationFiled: March 14, 2022Publication date: June 23, 2022Inventors: Vadim Vereschagin, Roman Kris, Ishai Schwarzband, Boaz Cohen, Evgeny Bal, Ariel Shkalim
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Patent number: 11301983Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.Type: GrantFiled: August 17, 2020Date of Patent: April 12, 2022Assignee: Applied Materials Israel Ltd.Inventors: Ishai Schwarzband, Yan Avniel, Sergey Khristo, Mor Baram, Shimon Levi, Doron Girmonsky, Roman Kris
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Patent number: 11276160Abstract: A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.Type: GrantFiled: October 1, 2018Date of Patent: March 15, 2022Assignee: Applied Materials Israel LTD.Inventors: Vadim Vereschagin, Roman Kris, Ishai Schwarzband, Boaz Cohen, Ariel Shkalim, Evgeny Bal
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Publication number: 20210383529Abstract: A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.Type: ApplicationFiled: October 31, 2019Publication date: December 9, 2021Inventors: Roman KRIS, Roi MEIR, Sahar LEVIN, Ishai SCHWARZBAND, Grigory KLEBANOV, Shimon LEVI, Efrat NOIFELD, Hiroshi MIROKU, Taku YOSHIZAWA, Kasturi SAHA, Sharon DUVDEVANI-BAR, Vadim VERESCHAGIN
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Patent number: 11056404Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.Type: GrantFiled: December 18, 2019Date of Patent: July 6, 2021Assignee: APPLIED MATERIALS ISRAEL LTD.Inventors: Roman Kris, Grigory Klebanov, Dhananjay Singh Rathore, Einat Frishman, Sharon Duvdevani-Bar, Assaf Shamir, Elad Sommer, Jannelle Anna Geva, Daniel Alan Rogers, Ido Friedler, Avi Aviad Ben Simhon
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Publication number: 20210193536Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.Type: ApplicationFiled: December 18, 2019Publication date: June 24, 2021Applicant: APPLIED MATERIALS ISRAEL LTD.Inventors: Roman Kris, Grigory Klebanov, Dhananjay Singh Rathore, Einat Frishman, Sharon Duvdevani-Bar, Assaf Shamir, Elad Sommer, Jannelle Anna Geva, Daniel Alan Rogers, Ido Friedler, Avi Aviad Ben Simhon
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Publication number: 20210066026Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.Type: ApplicationFiled: June 30, 2020Publication date: March 4, 2021Applicant: APPLIED MATERIALS ISRAEL LTD.Inventors: Roman Kris, Vadim Vereschagin, Assaf Shamir, Elad Sommer, Sharon Duvdevani-Bar, Meng Li Cecilia Lim
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Publication number: 20200380668Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.Type: ApplicationFiled: August 17, 2020Publication date: December 3, 2020Inventors: Ishai Schwarzband, Yan Avniel, Sergey Khristo, Mor Baram, Shimon Levi, Doron Girmonsky, Roman Kris
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Publication number: 20200327652Abstract: A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.Type: ApplicationFiled: October 1, 2018Publication date: October 15, 2020Inventors: Vadim VERESCHAGIN, Roman KRIS, Ishai SCHWARZBAND, Boaz COHEN, Ariel SHKALIM, Evgeny BAL
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Patent number: 10748272Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.Type: GrantFiled: May 17, 2018Date of Patent: August 18, 2020Assignee: APPLIED MATERIALS ISRAEL LTD.Inventors: Ishai Schwarzband, Yan Avniel, Sergey Khristo, Mor Baram, Shimon Levi, Doron Girmonsky, Roman Kris