Abstract: A power semiconductor module includes a baseplate having a top side, an underside, and a depression formed in the baseplate. The depression extends into the baseplate proceeding from the top side. A thickness of the baseplate is locally reduced in a region of the depression. The power semiconductor module further includes a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate.

Abstract: A half-bridge circuit, in which an input signal that is applied between two input terminals can be picked up at a phase output comprises two switching transistors controlled by a respective control signal that is applied between a control electrode and an auxiliary electrode and two diodes. The first input terminal is connected to the first electrode of the first switching transistor and to the first diode's cathode. A second electrode of the first switching transistor is connected to the first diode's anode by means of the phase output, via a line, to a first electrode of the second switching transistor and to a cathode of the second diode. A second electrode of the second switching transistor is connected to an anode of the second diode and to the second input terminal. The auxiliary electrode of the first switching transistor is connected to the line of the phase output.