Patents by Inventor Ron F. Chu

Ron F. Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxygen reactive ion etch (RIE) plasma method for removing oxidized organic residues from semiconductor substrates
    Patent number: 5567271
    Abstract: A Reactive Ion Etch (RIE) plasma method for removing from semiconductor substrates oxidized organic residues such as oxidized photoresist residues, and the Reactive Ion Etch (RIE) plasma which is employed within the Reactive Ion Etch (RIE) plasma method. A semiconductor substrate upon whose surface resides an oxidized organic residue such as an oxidized photoresist residue is provided into a Reactive Ion Etch (RIE) plasma chamber. Also provided into the chamber is a concentration of oxygen and a concentration of moisture. Finally, a radio frequency excitation of sufficient magnitude is provided to the concentration of oxygen and the concentration of moisture to form a plasma. The oxidized organic residue which resides upon the semiconductor substrate is then removed through etching in the Reactive Ion Etch (RIE) plasma.
    Type: Grant
    Filed: July 26, 1995
    Date of Patent: October 22, 1996
    Assignee: Chartered Semiconductor Manufacturing Pte Ltd
    Inventors: Ron F. Chu, Chet P. Lim, Sheau-Tan Loong