Patents by Inventor Ron Pongratz

Ron Pongratz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wireless communication technology, apparatuses, and methods
    Patent number: 11955732
    Abstract: Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.
    Type: Grant
    Filed: December 27, 2022
    Date of Patent: April 9, 2024
    Assignee: Intel Corporation
    Inventors: Erkan Alpman, Arnaud Lucres Amadjikpe, Omer Asaf, Kameran Azadet, Rotem Banin, Miroslav Baryakh, Anat Bazov, Stefano Brenna, Bryan K. Casper, Anandaroop Chakrabarti, Gregory Chance, Debabani Choudhury, Emanuel Cohen, Claudio Da Silva, Sidharth Dalmia, Saeid Daneshgar Asl, Kaushik Dasgupta, Kunal Datta, Brandon Davis, Ofir Degani, Amr M. Fahim, Amit Freiman, Michael Genossar, Eran Gerson, Eyal Goldberger, Eshel Gordon, Meir Gordon, Josef Hagn, Shinwon Kang, Te Yu Kao, Noam Kogan, Mikko S. Komulainen, Igal Yehuda Kushnir, Saku Lahti, Mikko M. Lampinen, Naftali Landsberg, Wook Bong Lee, Run Levinger, Albert Molina, Resti Montoya Moreno, Tawfiq Musah, Nathan G. Narevsky, Hosein Nikopour, Oner Orhan, Georgios Palaskas, Stefano Pellerano, Ron Pongratz, Ashoke Ravi, Shmuel Ravid, Peter Andrew Sagazio, Eren Sasoglu, Lior Shakedd, Gadi Shor, Baljit Singh, Menashe Soffer, Ra'anan Sover, Shilpa Talwar, Nebil Tanzi, Moshe Teplitsky, Chintan S. Thakkar, Jayprakash Thakur, Avi Tsarfati, Yossi Tsfati, Marian Verhelst, Nir Weisman, Shuhei Yamada, Ana M. Yepes, Duncan Kitchin
  • WIRELESS COMMUNICATION TECHNOLOGY, APPARATUSES, AND METHODS
    Publication number: 20230145401
    Abstract: Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.
    Type: Application
    Filed: December 27, 2022
    Publication date: May 11, 2023
    Inventors: Erkan Alpman, Arnaud Lucres Amadjikpe, Omer Asaf, Kameran Azadet, Rotem Banin, Miroslav Baryakh, Anat Bazov, Stefano Brenna, Bryan K. Casper, Anandaroop Chakrabarti, Gregory Chance, Debabani Choudhury, Emanuel Cohen, Claudio Da Silva, Sidharth Dalmia, Saeid Daneshgar Asl, Kaushik Dasgupta, Kunal Datta, Brandon Davis, Ofir Degani, Amr M. Fahim, Amit Freiman, Michael Genossar, Eran Gerson, Eyal Goldberger, Eshel Gordon, Meir Gordon, Josef Hagn, Shinwon Kang, Te Yu Kao, Noam Kogan, Mikko S. Komulainen, Igal Yehuda Kushnir, Saku Lahti, Mikko M. Lampinen, Naftali Landsberg, Wook Bong Lee, Run Levinger, Albert Molina, Resti Montoya Moreno, Tawfiq Musah, Nathan G. Narevsky, Hosein Nikopour, Oner Orhan, Georgios Palaskas, Stefano Pellerano, Ron Pongratz, Ashoke Ravi, Shmuel Ravid, Peter Andrew Sagazio, Eren Sasoglu, Lior Shakedd, Gadi Shor, Baljit Singh, Menashe Soffer, Ra'anan Sover, Shilpa Talwar, Nebil Tanzi, Moshe Teplitsky, Chintan S. Thakkar, Jayprakash Thakur, Avi Tsarfati, Yossi Tsfati, Marian Verhelst, Nir Weisman, Shuhei Yamada, Ana M. Yepes, Duncan Kitchin
  • Oscillator frequency range extension using switched inductor
    Patent number: 11552594
    Abstract: An inductive switch comprises an inductor that has a primary metallic winding having a boundary configured in shape of a figure eight, such as in two loops, and a plurality of secondary metallic windings arranged within the boundary of the primary metallic winding. The inductive switch includes a plurality of switches, each switch arranged in series with a respective one of the plurality of secondary metallic windings. An equal number of the secondary windings is arranged within each loop. A tunable inductor comprises at least one main metallic loop and at least one secondary metallic loop, wherein the at least one secondary metallic loop comprises a switch that is arranged to configure the at least one secondary metallic loop into at least one shorted metallic loop or at least one closed metallic loop. The at least one shorted loop is floating.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: January 10, 2023
    Assignee: Intel Corporation
    Inventors: Svetozar Broussev, Igor Gertman, Eyal Goldberger, Run Levinger, Ron Pongratz, Anat Rubin
  • WIRELESS COMMUNICATION TECHNOLOGY, APPARATUSES, AND METHODS
    Publication number: 20220384956
    Abstract: Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.
    Type: Application
    Filed: May 2, 2022
    Publication date: December 1, 2022
    Inventors: Erkan Alpman, Arnaud Lucres Amadjikpe, Omer Asaf, Kameran Azadet, Rotem Banin, Miroslav Baryakh, Anat Bazov, Stefano Brenna, Bryan K. Casper, Anandaroop Chakrabarti, Gregory Chance, Debabani Choudhury, Emanuel Cohen, Claudio Da Silva, Sidharth Dalmia, Saeid Daneshgar Asi, Kaushik Dasgupta, Kunal Datta, Brandon Davis, Ofir Degani, Amr M. Fahim, Amit Freiman, Michael Genossar, Eran Gerson, Eyal Goldberger, Eshel Gordon, Meir Gordon, Josef Hagn, Shinwon Kang, Te Yu Kao, Noam Kogan, Mikko S. Komulainen, Igal Yehuda Kushnir, Saku Lahti, Mikko M. Lampinen, Naftali Landsberg, Wook Bong Lee, Run Levinger, Albert Molina, Resti Montoya Moreno, Tawfiq Musah, Nathan G. Narevsky, Hosein Nikopour, Oner Orhan, Georgios Palaskas, Stefano Pellerano, Ron Pongratz, Ashoke Ravi, Shmuel Ravid, Peter Andrew Sagazio, Eren Sasoglu, Lior Shakedd, Gadi Shor, Baljit Singh, Menashe Soffer, Ra'anan Sover, Shilpa Talwar, Nebil Tanzi, Moshe Teplitsky, Chintan S. Thakkar, Jayprakash Thakur, Avi Tsarfati, Yossi Tsfati, Marian Verhelst, Nir Weisman, Shuhei Yamada, Ana M. Yepes, Duncan Kitchin
  • Wireless communication technology, apparatuses, and methods
    Patent number: 11424539
    Abstract: Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: August 23, 2022
    Assignee: Intel Corporation
    Inventors: Erkan Alpman, Arnaud Lucres Amadjikpe, Omer Asaf, Kameran Azadet, Rotem Banin, Miroslav Baryakh, Anat Bazov, Stefano Brenna, Bryan K. Casper, Anandaroop Chakrabarti, Gregory Chance, Debabani Choudhury, Emanuel Cohen, Claudio Da Silva, Sidharth Dalmia, Saeid Daneshgar Asl, Kaushik Dasgupta, Kunal Datta, Brandon Davis, Ofir Degani, Amr M. Fahim, Amit Freiman, Michael Genossar, Eran Gerson, Eyal Goldberger, Eshel Gordon, Meir Gordon, Josef Hagn, Shinwon Kang, Te Yu Kao, Noam Kogan, Mikko S. Komulainen, Igal Yehuda Kushnir, Saku Lahti, Mikko M. Lampinen, Naftali Landsberg, Wook Bong Lee, Run Levinger, Albert Molina, Resti Montoya Moreno, Tawfiq Musah, Nathan G. Narevsky, Hosein Nikopour, Oner Orhan, Georgios Palaskas, Stefano Pellerano, Ron Pongratz, Ashoke Ravi, Shmuel Ravid, Peter Andrew Sagazio, Eren Sasoglu, Lior Shakedd, Gadi Shor, Baljit Singh, Menashe Soffer, Ra'anan Sover, Shilpa Talwar, Nebil Tanzi, Moshe Teplitsky, Chintan S. Thakkar, Jayprakash Thakur, Avi Tsarfati, Yossi Tsfati, Marian Verhelst, Nir Weisman, Shuhei Yamada, Ana M. Yepes, Duncan Kitchin
  • Radio frequency circuitr having an integrated harmonic filter and a radio frequency circuit having transistors of different threshold voltages
    Patent number: 10903806
    Abstract: An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.
    Type: Grant
    Filed: September 18, 2016
    Date of Patent: January 26, 2021
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Ron Pongratz
  • OSCILLATOR FREQUENCY RANGE EXTENSION USING SWITCHED INDUCTOR
    Publication number: 20200336103
    Abstract: An inductive switch comprises an inductor that has a primary metallic winding having a boundary configured in shape of a figure eight, such as in two loops, and a plurality of secondary metallic windings arranged within the boundary of the primary metallic winding. The inductive switch includes a plurality of switches, each switch arranged in series with a respective one of the plurality of secondary metallic windings. An equal number of the secondary windings is arranged within each loop. A tunable inductor comprises at least one main metallic loop and at least one secondary metallic loop, wherein the at least one secondary metallic loop comprises a switch that is arranged to configure the at least one secondary metallic loop into at least one shorted metallic loop or at least one closed metallic loop. The at least one shorted loop is floating.
    Type: Application
    Filed: March 30, 2018
    Publication date: October 22, 2020
    Inventors: Svetozar Broussev, Igor Gertman, Eyal Goldberger, Run Levinger, Ron Pongratz, Anat Rubin
  • WIRELESS COMMUNICATION TECHNOLOGY, APPARATUSES, AND METHODS
    Publication number: 20200091608
    Abstract: Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.
    Type: Application
    Filed: December 20, 2017
    Publication date: March 19, 2020
    Inventors: Erkan Alpman, Arnaud Lucres Amadjikpe, Omer Asaf, Kameran Azadet, Rotem Banin, Miroslav Baryakh, Anat Bazov, Stefano Brenna, Bryan K. Casper, Anandaroop Chakrabarti, Gregory Chance, Debabani Choudhury, Emanuel Cohen, Claudio Da Silva, Sidharth Dalmia, Saeid Daneshgar Asl, Kaushik Dasgupta, Kunal Datta, Brandon Davis, Ofir Degani, Amr M. Fahim, Amit Freiman, Michael Genossar, Eran Gerson, Eyal Goldberger, Eshel Gordon, Meir Gordon, Josef Hagn, Shinwon Kang, Te Yu Kao, Noam Kogan, Mikko S. Komulainen, Igal Yehuda Kushnir, Saku Lahti, Mikko M. Lampinen, Naftali Landsberg, Wook Bong Lee, Run Levinger, Albert Molina, Resti Montoya Moreno, Tawfiq Musah, Nathan G. Narevsky, Hosein Nikopour, Oner Orhan, Georgios Palaskas, Stefano Pellerano, Ron Pongratz, Ashoke Ravi, Shmuel Ravid, Peter Andrew Sagazio, Eren Sasoglu, Lior Shakedd, Gadi Shor, Baljit Singh, Menashe Soffer, Ra'anan Sover, Shilpa Talwar, Nebil Tanzi, Moshe Teplitsky, Chintan S. Thakkar, Jayprakash Thakur, Avi Tsarfati, Yossi Tsfati, Marian Verhelst, Nir Weisman, Shuhei Yamada, Ana M. Yepes, Duncan Kitchin
  • PVT robust closed loop CMOS bias for linear power amplifier
    Patent number: 10020782
    Abstract: A biasing device for direct current (DC) biasing a linear power amplifier that comprises multiple linear power amplifier circuits that are ideally identical to each other; wherein the biasing device may include a replica circuit that is a replica of a linear power amplifier circuit of the multiple linear power amplifier circuits; and a bias control circuit; wherein the bias control circuit is configured to feed the replica circuit with one or more DC biasing signals thereby maintaining at a constant value a replica DC current that is consumed by the replica circuit, and maintaining at a fixed value a replica DC voltage of a replica output node of the replica circuit; and wherein the replica circuit is coupled the multiple linear power amplifier circuits and is configured to supply DC voltage bias signals that force each linear power amplifier circuit of the multiple linear power amplifier circuits to consume a linear power amplifier circuit DC current that equals the replica DC current, when the linear power
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: July 10, 2018
    Assignee: DSP GROUP LTD.
    Inventors: Avi Cohen, Ron Pongratz
  • Linear row array integrated power combiner for RF power amplifiers
    Patent number: 9813031
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 wireless local area network (WLAN), third generation (3G) and fourth generation (4G) cellular standards, BLUETOOTH™, ZIGBEE™, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard Complementary metal-oxide-semiconductor (CMOS) processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: November 26, 2015
    Date of Patent: November 7, 2017
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • Linear row array integrated power combiner for RF power amplifiers
    Patent number: 9667206
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: May 30, 2017
    Assignee: DSP GROUP Ltd.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz, Ilya Sima
  • PVT ROBUST CLOSED LOOP CMOS BIAS FOR LINEAR POWER AMPLIFIER
    Publication number: 20170104458
    Abstract: A biasing device for direct current (DC) biasing a linear power amplifier that comprises multiple linear power amplifier circuits that are ideally identical to each other; wherein the biasing device may include a replica circuit that is a replica of a linear power amplifier circuit of the multiple linear power amplifier circuits; and a bias control circuit; wherein the bias control circuit is configured to feed the replica circuit with one or more DC biasing signals thereby maintaining at a constant value a replica DC current that is consumed by the replica circuit, and maintaining at a fixed value a replica DC voltage of a replica output node of the replica circuit; and wherein the replica circuit is coupled the multiple linear power amplifier circuits and is configured to supply DC voltage bias signals that force each linear power amplifier circuit of the multiple linear power amplifier circuits to consume a linear power amplifier circuit DC current that equals the replica DC current, when the linear power
    Type: Application
    Filed: October 6, 2016
    Publication date: April 13, 2017
    Inventors: Avi Cohen, Ron Pongratz
  • RADIO FREQUENCY CIRCUITR HAVING AN INTEGRATED HARMONIC FILTER AND A RADIO FREQUENCY CIRCUIT HAVING TRANSISTORS OF DIFFERENT THRESHOLD VOLTAGES
    Publication number: 20170070199
    Abstract: An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.
    Type: Application
    Filed: September 18, 2016
    Publication date: March 9, 2017
    Inventors: Sergey Anderson, Ron Pongratz, Eli Schwartz, Ilya Sima
  • LINEAR ROW ARRAY INTEGRATED POWER COMBINER FOR RF POWER AMPLIFIERS
    Publication number: 20160149543
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: November 26, 2015
    Publication date: May 26, 2016
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • CMOS based TX/RX switch
    Patent number: 9312820
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: April 12, 2016
    Assignee: DSP GROUP LTD.
    Inventors: Alexander Mostov, Yaron Hasson, Ron Pongratz, Sharon Betzalel
  • Linear row array integrated power combiner for RF power amplifiers
    Patent number: 9208943
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, BLUETOOTH®, ZIGBEE®, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: December 8, 2015
    Assignee: DSP GROUP LTD.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz
  • LINEAR ROW ARRAY INTEGRATED POWER COMBINER FOR RF POWER AMPLIFIERS
    Publication number: 20150194942
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: January 22, 2015
    Publication date: July 9, 2015
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz, Ilya Sima
  • CONFIGURABLE MULTIMODE MULTIBAND INTEGRATED DISTRIBUTED POWER AMPLIFIER
    Publication number: 20150070097
    Abstract: A novel and useful configurable radio frequency (RF) power amplifier (PA) and related front end module (FEM) circuit that enables manipulation of the operating point of the power amplifier resulting in configurability, multimode and multiband operating capability. The configurable PA also provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configurable power amplifier is made up of one or more configurable sub-amplifiers having each constructed to have several orders of freedom (i.e. biasing points). Each sub-amplifier and its combiner path include active and passive elements. Manipulating one or more biasing points of each sub-amplifier, and therefore of the aggregate power amplifier as well, achieves multimode and multiband operation. Biasing points include, for example, the gain and saturation point, frequency response, linearity level and EVM.
    Type: Application
    Filed: November 13, 2014
    Publication date: March 12, 2015
    Applicant: DSP Group, Ltd.
    Inventors: Abraham Bauer, Eli Schwartz, Ilya Sima, Lior Blanka, Sergey Anderson, Ron Pongratz, Alex Mostov
  • CMOS Based TX/RX Switch
    Publication number: 20140087673
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Alexander Mostov, Yaron Hasson, Ron Pongratz
  • LINEAR ROW ARRAY INTEGRATED POWER COMBINER FOR RF POWER AMPLIFIERS
    Publication number: 20140085001
    Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
    Type: Application
    Filed: September 23, 2013
    Publication date: March 27, 2014
    Applicant: DSP Group, Ltd.
    Inventors: Sergey Anderson, Alexander Mostov, Eli Schwartz, Ron Pongratz