Abstract: The present disclosure suggests apparatus and methods that can be used to chemically process microfeature workpieces, e.g., semiconductor wafers. One implementation of the invention provides a method in which a surface of a microfeature workpiece is contacted with an etchant liquid. The wall of the processing chamber may be highly transmissive of an operative wavelength range of radiation, but the etchant liquid is absorptive of the operative wavelength range. The etchant liquid is heated by delivering radiation through the wall of a processing chamber. This permits processing chambers to be formed of materials (e.g., fluoropolymers) that cannot be used in conventional systems that must conduct heat through the wall of the processing chamber.

Abstract: The present disclosure suggests apparatus and methods that can be used to chemically process microfeature workpieces, e.g., semiconductor wafers. One implementation of the invention provides a method in which a surface of a microfeature workpiece is contacted with an etchant liquid. The wall of the processing chamber may be highly transmissive of an operative wavelength range of radiation, but the etchant liquid is absorptive of the operative wavelength range. The etchant liquid is heated by delivering radiation through the wall of a processing chamber. This permits processing chambers to be formed of materials (e.g., fluoropolymers) that cannot be used in conventional systems that must conduct heat through the wall of the processing chamber.

Abstract: The present disclosure suggests apparatus and methods that can be used to chemically process microfeature workpieces, e.g., semiconductor wafers. One implementation of the invention provides a method in which a surface of a microfeature workpiece is contacted with an etchant liquid. The wall of the processing chamber may be highly transmissive of an operative wavelength range of radiation, but the etchant liquid is absorptive of the operative wavelength range. The etchant liquid is heated by delivering radiation through the wall of a processing chamber. This permits processing chambers to be formed of materials (e.g., fluoropolymers) that cannot be used in conventional systems that must conduct heat through the wall of the processing chamber.

Abstract: An apparatus and system for wafer-scale microwave digestion of layers or structures from a large-scale semiconductor substrate include a digestion vessel with a chamber which is configured to receive a whole large-scale semiconductor substrate, such as a silicon wafer. The digestion vessel may be configured to be placed within a containment apparatus, which structurally supports the digestion vessel. A digestion method includes placing at least one large-scale semiconductor substrate within the digestion vessel with a polar solvent, placing the digestion vessel within the containment apparatus, placing the containment apparatus in a microwave oven or other microwave source, and heating the polar solvent and substrate with microwaves. The heated polar solvent dissolves one or more desired layers or structures and may be subsequently analyzed to evaluate the amounts of one or more materials of such layers or structures.