Abstract: The invention provides a true average, wide dynamic range microwave power sensor using a diode-stack-attenuator diode stack technology. The invention provides a diode stack microwave power sensor which includes an RF signals receiver having wide dynamic power ranges; a low power sensor path connected between the receiver and ground for sensing relatively low power RF input signals. The low power sensor path includes one or more stacked RF diodes in which a number of diode pairs may be coupled to ground through respective capacitors. An impedance network including attenuating resistors R1 and R2 are connected in series between the receiver and ground. A high power sensor path is connected in parallel between the attenuating resistors R1 and R2 and ground for sensing attenuated relatively high power RF input signals.