Patents by Inventor Ronald O. Russell

Ronald O. Russell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical vapor deposition system for polycrystalline silicon rod production
    Patent number: 6749824
    Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.
    Type: Grant
    Filed: February 13, 2003
    Date of Patent: June 15, 2004
    Assignee: Advanced Silicon Materials LLC
    Inventors: David W. Keck, Ronald O. Russell, Howard J. Dawson
  • Chemical vapor deposition system for polycrystalline silicon rod production
    Publication number: 20030127045
    Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.
    Type: Application
    Filed: February 13, 2003
    Publication date: July 10, 2003
    Applicant: Advanced Silicon Materials LLC
    Inventors: David W. Keck, Ronald O. Russell, Howard J. Dawson
  • Chemical vapor deposition system for polycrystalline silicon rod production
    Patent number: 6544333
    Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.
    Type: Grant
    Filed: April 24, 2001
    Date of Patent: April 8, 2003
    Assignee: Advanced Silicon Materials LLC
    Inventors: David W. Keck, Ronald O. Russell, Howard J. Dawson
  • Chemical vapor deposition system for polycrystalline silicon rod production
    Publication number: 20020014197
    Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.
    Type: Application
    Filed: April 24, 2001
    Publication date: February 7, 2002
    Inventors: David W. Keck, Ronald O. Russell, Howard J. Dawson
  • Chemical vapor deposition system for polycrystalline silicon rod production
    Patent number: 6221155
    Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current is provided to the rods by a power supply, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, to concentrate at least 70% of the current in an annular region that is the outer 15% of a rod due to the “skin effect.
    Type: Grant
    Filed: December 15, 1998
    Date of Patent: April 24, 2001
    Assignee: Advanced Silicon Materials, LLC
    Inventors: David W. Keck, Ronald O. Russell, Howard J. Dawson