Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony telluride are directly bonded to flexible nickel substrates.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony telluride are directly bonded to flexible nickel substrates.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony telluride are directly bonded to flexible nickel substrates.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony telluride are directly bonded to flexible nickel substrates.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony are directly bonded to flexible nickel substrates.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony are directly bonded to flexible nickel substrates.

Abstract: Cooling systems for microprocessors are addressed. Some systems may include a chemical vapor deposited (CVD) diamond heatspreader mounted to a base of a heat sink and to a microprocessor chip, while others may include a copper insert mounted within a depression of a heat sink, with the CVD diamond heatspreader mounted within an indent of the insert.

Abstract: A hydrogen purification system and method that utilizes a hydrogen separator with a novel composite structure. The hydrogen separator has a first porous layer of a hydrogen permeable material, such as a palladium alloy. A solid layer of the same hydrogen permeable material is then disposed onto the first porous layer. A pressure differential is created across the structure of the composite hydrogen separator. The porous layer of hydrogen permeable material supports the solid layer and enables the solid layer to withstand large pressure differentials. Furthermore, the porous layer of the hydrogen permeable material bonds to the solid layer, thereby greatly increasing the effective surface area of the solid layer that is exposed to hydrogen gas. Accordingly, a large flow rate of hydrogen gas can be obtained in a small amount of space.

Abstract: A hydrogen purification system and method that utilizes a hydrogen separator with a novel composite structure. The hydrogen separator has a first porous layer of a hydrogen permeable material, such as a palladium alloy. A solid layer of the same hydrogen permeable material is then disposed onto the first porous layer. A pressure differential is created across the structure of the composite hydrogen separator. The porous layer of hydrogen permeable material supports the solid layer and enables the solid layer to withstand large pressure differentials. Furthermore, the porous layer of the hydrogen permeable material bonds to the solid layer, thereby greatly increasing the effective surface area of the solid layer that is exposed to hydrogen gas. Accordingly, a large flow rate of hydrogen gas can be obtained in a small amount of space.

Abstract: Cooling systems for microprocessors are addressed. Some systems may include a chemical vapor deposited (CVD) diamond heatspreader mounted to a base of a heat sink and to a microprocessor chip, while others may include a copper insert mounted within a depression of a heat sink, with the CVD diamond heatspreader mounted within an indent of the insert.

Abstract: This invention relates to the nature of thick film compositions that are specifically designed for the fabrication of circuit elements on diamond substrates, especially resistive elements. The nature of diamond sheet material requires special consideration because of its relatively low coefficient of thermal expansion and its sensitivity to oxygen at elevated processing temperatures. The general compositional requirements of thick film paste formulations are provided as a basis for accommodating the particular physical properties of diamond, and thereby establishing a method by which high performance microelectronic components can be fabricated economically. Thick film pastes containing certain borosilicate glasses, metal components, and optionally semiconducting materials are demonstrated to possess favorable behavior in terms of mechanical and electrical properties after sintering. Resistive elements on diamond can be fabricated by adding conductive components to a borosilicate glass.

Abstract: A multilayer brazeable metallization structure for diamond components is described. The brazeable metallization finds particular application for the attachment of diamond components such as heat spreaders in electronic packages that incorporate high power semiconductor devices. In the present invention, a diamond component is provided with a multilayer coating of metals including a first layer of chromium for adhesion, a second barrier layer of a refractory metal for a barrier that may be alloyed with chromium, and a top layer of copper, silver or gold for wetting. The refractory metals for the second layer include tungsten, molybdenum, tantalum and niobium. Tungsten or tungsten-chromium alloy is preferred as the second layer. This multilayer metallization structure provides a robust interface between diamond and standard brazing alloys which are used to join the diamond to electrical leads or a flange made of metals such as copper-tungsten.

Abstract: This invention relates to the nature of thick film compositions that are specifically designed for the fabrication of circuit elements on diamond substrates, especially resistive elements. The nature of diamond sheet material requires special consideration because of its relatively low coefficient of thermal expansion and its sensitivity to oxygen at elevated processing temperatures. The general compositional requirements of thick film paste formulations are provided as a basis for accommodating the particular physical properties of diamond, and thereby establishing a method by which high performance microelectronic components can be fabricated economically. Thick film pastes containing certain borosilicate glasses, metal components, and optionally semiconducting materials are demonstrated to possess favorable behavior in terms of mechanical and electrical properties after sintering. Resistive elements on diamond can be fabricated by adding conductive components to a borosilicate glass.