Patents by Inventor Ronald Victor Bravenec

Ronald Victor Bravenec has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8660805
    Abstract: Disclosed are a method and system for measuring the electron energy distribution function (EEDF) in a plasma which has a pronounced drifting Maxwellian component of the EEDF. The method comprises fitting an acquired unfiltered electron current vs. bias voltage curve to a functional form which assumes an EEDF comprising at least one stationary Maxwellian component and at least one drifting Maxwellian component. The method and system allow more accurate characterization of plasmas with electron components with pronounced drift, such as plasmas in microwave surface wave plasma (SWP) sources.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: February 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Ronald Victor Bravenec, Jianping Zhao
  • Publication number: 20120084026
    Abstract: Disclosed are a method and system for measuring the electron energy distribution function (EEDF) in a plasma which has a pronounced drifting Maxwellian component of the EEDF. The method comprises fitting an acquired unfiltered electron current vs. bias voltage curve to a functional form which assumes an EEDF comprising at least one stationary Maxwellian component and at least one drifting Maxwellian component. The method and system allow more accurate characterization of plasmas with electron components with pronounced drift, such as plasmas in microwave surface wave plasma (SWP) sources.
    Type: Application
    Filed: October 4, 2011
    Publication date: April 5, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ronald Victor BRAVENEC, Jianping Zhao
  • Patent number: 7875859
    Abstract: An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an ion selection grid disposed proximate to the entrance grid, an electron rejection grid disposed proximate to the ion selection grid, and an ion current collector disposed proximate to the electron rejection grid. The ion selection grid is coupled to an ion selection voltage source configured to positively bias the ion selection grid by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: January 25, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Lin Xu, Ronald Victor Bravenec
  • Patent number: 7777179
    Abstract: An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an electron rejection grid disposed proximate to the entrance grid, and an ion current collector disposed proximate to the electron rejection grid. The ion current collector is coupled to an ion selection voltage source configured to positively bias the ion current collector by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: August 17, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Lin Xu, Ronald Victor Bravenec
  • Publication number: 20090242790
    Abstract: An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an ion selection grid disposed proximate to the entrance grid, an electron rejection grid disposed proximate to the ion selection grid, and an ion current collector disposed proximate to the electron rejection grid. The ion selection grid is coupled to an ion selection voltage source configured to positively bias the ion selection grid by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.
    Type: Application
    Filed: March 31, 2008
    Publication date: October 1, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Lee Chen, Lin Xu, Ronald Victor Bravenec
  • Publication number: 20090242791
    Abstract: An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an electron rejection grid disposed proximate to the entrance grid, and an ion current collector disposed proximate to the electron rejection grid. The ion current collector is coupled to an ion selection voltage source configured to positively bias the ion current collector by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.
    Type: Application
    Filed: March 31, 2008
    Publication date: October 1, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Lee CHEN, Lin XU, Ronald Victor BRAVENEC