Patents by Inventor Ronald W. Nunes
Ronald W. Nunes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9418692Abstract: A magnetic data storage medium includes an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy. The medium also includes an ion-doped overcoat having an ion density that is at a maximum substantially at the interface with the recording layer and has a continuous grading of ion density between the overcoat and the recording layer. The coercivity is at a minimum substantially at the interface.Type: GrantFiled: October 9, 2014Date of Patent: August 16, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, NATIONAL UNIVERSITY OF SINGAPOREInventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Publication number: 20150118521Abstract: A magnetic data storage medium includes an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy. The medium also includes an ion-doped overcoat having an ion density that is at a maximum substantially at the interface with the recording layer and has a continuous grading of ion density between the overcoat and the recording layer. The coercivity is at a minimum substantially at the interface.Type: ApplicationFiled: October 9, 2014Publication date: April 30, 2015Inventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Patent number: 8900730Abstract: A magnetic data storage medium comprising: an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy, wherein the coercivity or anisotropy is at a minimum substantially at one side of the magnetic recording layer, and having substantial portion of maximum coercivity or anisotropy at the other side of the magnetic recording layer. Also, a method of fabricating a magnetic data storage medium is included.Type: GrantFiled: January 31, 2012Date of Patent: December 2, 2014Assignee: International Business Machines CorporationInventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Publication number: 20140187460Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.Type: ApplicationFiled: January 3, 2013Publication date: July 3, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Ali Afzali-Ardakani, Emanuel Israel Cooper, Mahmoud Khojasteh, Ronald W. Nunes, George Gabriel Totir
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Publication number: 20130320254Abstract: A magnetic data storage medium comprising: an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy, wherein the coercivity or anisotropy is at a minimum substantially at one side of the magnetic recording layer, and having substantial portion of maximum coercivity or anisotropy at the other side of the magnetic recording layer. Also, a method of fabricating a magnetic data storage medium is included.Type: ApplicationFiled: January 31, 2012Publication date: December 5, 2013Applicants: National University of Singapore, International Business Machines CorporationInventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
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Patent number: 8563408Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: GrantFiled: June 28, 2012Date of Patent: October 22, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Patent number: 8455420Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: GrantFiled: June 28, 2012Date of Patent: June 4, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Patent number: 8367555Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.Type: GrantFiled: December 11, 2009Date of Patent: February 5, 2013Assignees: International Business Machines Corporation, Advanced Technology Materials, Inc.Inventors: Ali Afzali-Ardakani, Emanuel Israel Cooper, Mahmoud Khojasteh, Ronald W. Nunes, George Gabriel Totir
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Publication number: 20120276724Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: ApplicationFiled: June 28, 2012Publication date: November 1, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Publication number: 20120270763Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: ApplicationFiled: June 28, 2012Publication date: October 25, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Patent number: 8252673Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: GrantFiled: December 21, 2009Date of Patent: August 28, 2012Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Publication number: 20110151653Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: ApplicationFiled: December 21, 2009Publication date: June 23, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Publication number: 20110140181Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.Type: ApplicationFiled: December 11, 2009Publication date: June 16, 2011Applicants: International Business Machines Corporation, Advanced Technology Materials, Inc.Inventors: Ali Afzali-Ardakani, Emanuel Israel Cooper, Mahmoud Khojasteh, Ronald W. Nunes, George Gabriel Totir
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Patent number: 6792856Abstract: Disclosed is a printing apparatus, having a print surface lying in a print plane defined by an imaginary x-axis and y-axis, the print surface having an outward normal pointing in the positive direction along an imaginary z-axis, such that the x-axis, y-axis, and z-axis are substantially orthogonal to one another, a lower stamp clamp disposed adjacent to the negative-x edge of the print surface, an upper stamp clamp, moveable in two dimensions in a trajectory plane defined by the x-axis and z-axis, a stamp comprising a flexible material, the stamp having a first end attached to the lower stamp clamp and a second end attached to the upper stamp clamp, such that a cross section of the stamp parallel to the trajectory plane forms an arc extending from an origin point Q on the lower stamp clamp having (x,z) coordinates (0,0) to point E on the upper stamp clamp, this arc being described by the mathematical function &thgr;(s), where s is the curvilinear distance along the arc measured from point Q, and &thgr; is theType: GrantFiled: July 16, 2002Date of Patent: September 21, 2004Assignee: International Business Machines CorporationInventors: Shawn Anthony Hall, Ronald W. Nunes, Robert H. Fair, William J. Surovic, Istvan Lovas, Robert Scott Emmans
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Publication number: 20040011231Abstract: Disclosed is a printing apparatus, having a print surface lying in a print plane defined by an imaginary x-axis and y-axis, the print surface having an outward normal pointing in the positive direction along an imaginary z-axis, such that the x-axis, y-axis, and z-axis are substantially orthogonal to one another, a lower stamp clamp disposed adjacent to the negative-x edge of the print surface, an upper stamp clamp, moveable in two dimensions in a trajectory plane defined by the x-axis and z-axis, a stamp comprising a flexible material, the stamp having a first end attached to the lower stamp clamp and a second end attached to the upper stamp clamp, such that a cross section of the stamp parallel to the trajectory plane forms an arc extending from an origin point Q on the lower stamp clamp having (x,z) coordinates (0,0) to point E on the upper stamp clamp, this arc being described by the mathematical function &thgr;(s), where s is the curvilinear distance along the arc measured from point Q, and &thgr; is theType: ApplicationFiled: July 16, 2002Publication date: January 22, 2004Applicant: International Business Machines CorporationInventors: Shawn Anthony Hall, Ronald W. Nunes, Robert H. Fair, William J. Surovic, Istvan Lovas, Robert Scott Emmans
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Patent number: 6673287Abstract: A method of exposing a composite organic/inorganic master to alkylchlorosilanes in the vapor phase. Chlorosilanes participate in facile reactions with hydroxyl groups existing on the surface of inorganic oxides (such as glass or the native oxides on silicon, aluminum, tin, etc.); or those in organics-containing phenolic or alcoholic groups, such as photoresists. The alkyl group on the silane can be chosen from a large selection of aliphatic or aromatic organic groups that have substituents with varying polarity and reactivity.Type: GrantFiled: May 16, 2001Date of Patent: January 6, 2004Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Laura L. Kosbar, Michael P. Mastro, Ronald W. Nunes
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Publication number: 20020172895Abstract: A method of exposing a composite organic/inorganic master to alkylchlorosilanes in the vapor phase. Chlorosilanes participate in facile reactions with hydroxyl groups existing on the surface of inorganic oxides (such as glass or the native oxides on silicon, aluminum, tin, etc.); or those in organics-containing phenolic or alcoholic groups, such as photoresists. The alkyl group on the silane can be chosen from a large selection of aliphatic or aromatic organic groups that have substituents with varying polarity and reactivity.Type: ApplicationFiled: May 16, 2001Publication date: November 21, 2002Inventors: Tricial L. Breen, Laura L. Kosbar, Michael P. Mastro, Ronald W. Nunes
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Patent number: 6190955Abstract: Improved trench forming methods for semiconductor substrates using BSG avoid the problems associated with conventional TEOS hard mask techniques. The methods comprise: (a) providing a semiconductor substrate, (b) applying a conformal layer of borosilicate glass (BSG) on the substrate; (c) forming a patterned photoresist layer over the BSG layer whereby a portion of a layer underlying the photoresist layer is exposed, (d) anisotropically etching through the exposed portion of the underlying layer, through any other layers lying between the photoresist layer and the semiconductor substrate, and into the semiconductor substrate, thereby forming a trench in the semiconductor substrate. Preferably, one or more dielectric layers are present on the substrate surface prior to application of the BSG layer. One or more chemical barrier and/or organic antireflective coating layers may be applied over the BSG layer between the BSG layer and the photoresist layer.Type: GrantFiled: January 27, 1998Date of Patent: February 20, 2001Assignees: International Business Machines Corporation, Infineon Technologies North America Corp., Kabushiki Kaisha ToshibaInventors: Matthias Ilg, Richard L. Kleinhenz, Soichi Nadahara, Ronald W. Nunes, Klaus Penner, Klaus Roithner, Radhika Srinivasan, Shigeki Sugimoto
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Patent number: 5919597Abstract: Methods are provided to prepare photoresists without isolation of various components, i.e. in a "one-pot" procedure. Preferred one-pot preparation methods of the invention include preparing a photoresist resin binder in a selected photoresist solvent and, without isolation of the resin binder from the solvent, adding a photoactive component and any other desired photoresist materials to the resin binder in solution to thereby provide a liquid photoresist composition in the solvent in which the resin binder was prepared. The invention also provides novel methods for synthesizing resist resin binders, particularly phenolic polymers that contain phenolic OH groups covalently bonded to another moiety such as acid labile groups or inert blocking groups.Type: GrantFiled: October 30, 1997Date of Patent: July 6, 1999Assignees: IBM Corporation of Armonk, Shipley Company, L.L.C. of MarlboroughInventors: Roger F. Sinta, Uday Kumar, George W. Orsula, James I. T. Fahey, William R. Brunsvold, Wu-Song Huang, Ahmad D. Katnani, Ronald W. Nunes, Mahmoud M. Khojasteh
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Patent number: 5457005Abstract: A dry developable photoresist composition that contains in admixture a polymeric epoxide; a di- or polyfunctional organosilicon material; and an onium salt; and use thereof to produce an image.Type: GrantFiled: July 2, 1993Date of Patent: October 10, 1995Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Ronald W. Nunes, Sharon L. Nunes, Jurij R. Paraszczak, Russell J. Serino