Patents by Inventor Rong-Ren LEE
Rong-Ren LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11515307Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.Type: GrantFiled: June 4, 2020Date of Patent: November 29, 2022Assignees: National Applied Research Laboratories, EPISTAR CorporationInventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Patent number: 11189754Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.Type: GrantFiled: June 25, 2019Date of Patent: November 30, 2021Assignee: Epistar CorporationInventors: Meng-Yang Chen, Rong-Ren Lee
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Publication number: 20200303377Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.Type: ApplicationFiled: June 4, 2020Publication date: September 24, 2020Inventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Patent number: 10749077Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: GrantFiled: December 20, 2018Date of Patent: August 18, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Patent number: 10727231Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.Type: GrantFiled: October 12, 2018Date of Patent: July 28, 2020Assignees: National Applied Research Laboratories, EPISTAR CorporationInventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Patent number: 10600938Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.Type: GrantFiled: May 18, 2018Date of Patent: March 24, 2020Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
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Patent number: 10580937Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: GrantFiled: December 20, 2018Date of Patent: March 3, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Patent number: 10566498Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: GrantFiled: July 24, 2018Date of Patent: February 18, 2020Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
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Publication number: 20190393380Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.Type: ApplicationFiled: June 25, 2019Publication date: December 26, 2019Inventors: Meng-Yang CHEN, Rong-Ren LEE
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Patent number: 10367118Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.Type: GrantFiled: September 15, 2016Date of Patent: July 30, 2019Assignee: EPISTAR CORPORATIONInventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
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Publication number: 20190148599Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: ApplicationFiled: December 20, 2018Publication date: May 16, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Publication number: 20190131496Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: ApplicationFiled: December 20, 2018Publication date: May 2, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Patent number: 10217892Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1?x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.Type: GrantFiled: July 26, 2016Date of Patent: February 26, 2019Assignee: EPISTAR CORPORATIONInventors: Rong-Ren Lee, Yung-Szu Su, Shih-Chang Lee
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Patent number: 10205059Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.Type: GrantFiled: September 20, 2017Date of Patent: February 12, 2019Assignee: Epistar CorporationInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Publication number: 20190043862Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.Type: ApplicationFiled: October 12, 2018Publication date: February 7, 2019Inventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Publication number: 20180374992Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: ApplicationFiled: July 24, 2018Publication date: December 27, 2018Inventors: Hsin-Chih CHIU, Shih-I CHEN, You-Hsien CHANG, Hao-Min KU, Ching-Yuan TSAI, Kuan-Chih KUO, Chih-Hung HSIAO, Rong-Ren LEE
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Patent number: 10134735Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.Type: GrantFiled: June 26, 2017Date of Patent: November 20, 2018Assignees: National Applied Research Laboratories, EPISTAR CorporationInventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Patent number: 10121933Abstract: The present disclosure discloses a method forming a semiconductor light-emitting unit, comprising the steps of providing a semiconductor substrate; epitaxially growing a reaction layer on the semiconductor substrate; and epitaxially growing a buffer layer on the reaction layer; wherein the buffer layer and the semiconductor substrate are lattice-mismatched, and a dislocation density of the buffer layer is smaller than smaller than 1*109 cm?2.Type: GrantFiled: March 24, 2017Date of Patent: November 6, 2018Assignee: EPISTAR CORPORATIONInventors: Meng Yang Chen, Rong Ren Lee, Shih Chang Lee
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Publication number: 20180269358Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.Type: ApplicationFiled: May 18, 2018Publication date: September 20, 2018Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
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Patent number: 10038117Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: GrantFiled: September 8, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee