Abstract: In a method for continuously preparing crude ethylene sulfate, a sulfur trioxide solution is prepared by dissolving sulfur trioxide with a solution A, an ethylene oxide solution is prepared by mixing a solution B with ethylene oxide, the sulfur trioxide solution and the ethylene oxide solution are pre-cooled, and introduced into a set of microchannel reactors for a real-time reaction to obtain a mixed solution containing crude ethylene sulfate, and then a post-treatment process is carried out to obtain crude ethylene sulfate. With the process, the reaction selectivity is good, and a microchannel reaction can accurately control the reaction energy level due to its rapid mixing and timely heat transfer, which greatly reduces the safety risk and effectively avoids the occurrence of side reactions. One-step synthesis is realized, the atomic economic benefits are significantly improved, and thus the process is a typical low-carbon green chemical reaction.

Abstract: In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.

Abstract: In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.