Abstract: A single lithography process for multi-layer metal/dielectric coatings using a series of developing, baking, and lifting steps to coat two or more thin films without re-patterning that results in the encapsulation and profile optimization of multi-spectral patterned thin film coatings is disclosed.

Abstract: A single lithography process for multi-layer metal/dielectric coatings using a series of developing, baking, and lifting steps to coat two or more thin films without re-patterning that results in the encapsulation and profile optimization of multi-spectral patterned thin film coatings is disclosed.

Abstract: This disclosure relates to oxide materials, as well as related articles, systems and methods.

Abstract: Films for optical use, articles containing such films, methods for making such films, and systems that utilize such films, are disclosed

Abstract: Films for optical use, articles containing such films, methods for making such films, and systems that utilize such films, are disclosed

Abstract: Films for optical use, articles containing such films, methods for making such films, and systems that utilize such films, are disclosed

Abstract: The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical endpointing the etch of the sacrificial film on the etch stop layer allows another element of process control over the depth of the primary trench or via.

Abstract: A method for forming a diffractive lens includes forming an etch stop layer on a first surface of a silicon substrate, forming a diffractive optical element above the etch stop layer, forming a planarization layer covering the diffractive optical element, planarizing the planarization layer, forming a bonding layer on the planarization layer, bonding a transparent substrate on the bonding layer, and etching a second surface of the silicon substrate to the etch stop layer to remove a portion of the silicon substrate opposite the diffractive optical element, wherein the remaining portion of the silicon substrate forms a bonding ring.

Abstract: The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical endpointing the etch of the sacrificial film on the etch stop layer allows another element of process control over the depth of the primary trench or via.