Abstract: Fine-grained and/or equiaxed coatings, substantially free from columnar structure, are deposited on substrates by chemical vapor deposition by directing the flow of reactant gases to the substrate with high velocity and in close proximity thereto, most often at a velocity gradient of at least about 1050 and preferably at least about 2000 cm./cm.-sec. The deposition process is preferably conducted while moving the substrate so as to coat large areas thereof. By this method, tungsten and/or rhenium X-ray targets having excellent properties under conditions of rapid temperature cycling may be produced.

Abstract: Dense tungsten ingots are prepared by hot isostatically pressing at a temperature of about 1500.degree. to about 1700.degree. C. and a pressure of about 20 to about 30 ksi for about 2 to about 3 hours a refractory container comprising a green tungsten metal compact in contact with a dopant, the tungsten metal of the compact being formed prior to contact with the dopant; the dopant being a material which is insoluble in tungsten and contains molecules having atomic radii greater than the atomic radius of tungsten by at least about 15%.