Abstract: Embodiments include an apparatus including: a first delay line and a second delay line, wherein the first delay line is configured to receive a clock signal and output a first delayed signal, and wherein the second delay line is configured to receive the first delayed signal and output a second delayed signal; a first control circuit configured to (i) apply a first delay select to the first delay line and the second delay line such that the second delayed signal is delayed with respect to the clock signal by a half-clock period, and (ii) apply a second delay select to the first delay line such that the first delayed signal is delayed with respect to the clock signal by the half-clock period; and a second control circuit configured to control a third delay line based on the first delay select and the second delay select.

Abstract: An apparatus includes a lock detect circuit configured to receive a phase detect signal and generate a lock signal according to the phase detect signal. The phase detect signal is a single bit signal having a first value or a second value. A method includes receiving a phase detect signal using a lock detect circuit, and generating a lock signal according to the phase detect signal. The phase detect signal is a single bit signal having a first value or a second value.

Abstract: Systems and methods are provided for timing read operations with a memory device. A system for timing read operations with a memory device includes a gating circuit configured to receive a timing signal from the memory device. The gating circuit is further configured to pass through the timing signal as a filtered timing signal during a gating window. The gating window is generated by the gating circuit based on a control signal. The system further includes a timing control circuit configured to generate the control signal after receiving a read request from a memory controller. The timing control circuit is further configured to adjust the control signal to account for temporal variations in the timing signal from the memory device.

Abstract: Methods and systems for detection and correction of timing signal drift in memory systems are provided. A start time and an end time of a first time interval is determined with control circuitry such that a last falling edge in a first of a plurality of data strobe sequences received from the memory occurs outside of the first time interval. A start time and an end time of a close-enable time interval is adjusted based at least in part on determining whether a second of the plurality of data strobe sequences occurs within the first time interval. Sampling of data received from the memory is disabled in response to determining that the last falling edge in the second received data strobe sequence occurs within the close-enable time interval.

Abstract: A system and method are disclosed for masking a clock input from a clock line when the clock line is not being driven by a clock source. The clock mask is triggered by a clock cycle from the clock source. In one version, a memory controller configures a masking circuit to either allow a clock signal to the clock input or to mask the clock input from a bidirectional clock bus. The masking circuit may comprise a storage element and a gate, as an example.

Abstract: Methods and systems for detection and correction of timing signal drift in memory systems are provided. A start time and an end time of a first time interval is determined with control circuitry such that a last falling edge in a first of a plurality of data strobe sequences received from the memory occurs outside of the first time interval. A start time and an end time of a close-enable time interval is adjusted based at least in part on determining whether a second of the plurality of data strobe sequences occurs within the first time interval. Sampling of data received from the memory is disabled in response to determining that the last falling edge in the second received data strobe sequence occurs within the close-enable time interval.

Abstract: Systems and methods are provided for timing read operations with a memory device. A system for timing read operations with a memory device includes a gating circuit configured to receive a timing signal from the memory device. The gating circuit is further configured to pass through the timing signal as a filtered timing signal during a gating window. The gating window is generated by the gating circuit based on a control signal. The system further includes a timing control circuit configured to generate the control signal after receiving a read request from a memory controller. The timing control circuit is further configured to adjust the control signal to account for temporal variations in the timing signal from the memory device.

Abstract: A system and method are disclosed for masking a clock input from a clock line when the clock line is not being driven by a clock source. The clock mask is triggered by a clock cycle from the clock source. In one version, a memory controller configures a masking circuit to either allow a clock signal to the clock input or to mask the clock input from a bidirectional clock bus. The masking circuit may comprise a storage element and a gate, as an example.