Abstract: A high performance high-electron mobility transistor (HEMT) design and methods of manufacturing the same are provided. This design introduces a bias layer in to the HEMT allowing the transistor to be fed with alternating current (AC) alone without the need for a negative direct current (DC) bias power supply.

Abstract: A composite includes a matrix having a plurality of matrix nanoparticles and a plurality of hetero-nanoparticles dispersed in the matrix. The hetero-nanoparticles include an atom having an atomic weight larger than the atoms in the matrix nanoparticles. A thermoelectric converter includes one or more first legs, each including an n-doped composite, and one or more second legs, each including a p-doped composite. The n-doped and p-doped composites include a matrix having a plurality of matrix nanoparticles and a plurality of hetero-nanoparticles dispersed in the matrix. The matrix nanoparticles and hetero-nanoparticles in each of the n-doped and p-doped composites can be the same or different. A method of making a composite for thermoelectric converter applications includes providing a mixture a plurality of matrix nanoparticles and a plurality of hetero-nanoparticles and applying current activated pressure assisted densification to form the composite.