Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Abstract: A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described.

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

Abstract: Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

Abstract: A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described.

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

Abstract: Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Abstract: A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described.