Patents by Inventor Roy H. Olsson, III

Roy H. Olsson, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240177759
    Abstract: Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO2) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells. search Ternary Content Addressable Memory (TCAM) cells, and/neural circuitry. The diodes are non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, with high on/off and self-rectifying ratios. Cells may be formed, for example, with two diodes that are oppositely polarized, and may be achieved without transistors to form, for example, 0T-2R structures.
    Type: Application
    Filed: March 30, 2022
    Publication date: May 30, 2024
    Inventors: Deep JARIWALA, Roy H. OLSSON, III, Eric Andrew STACH, Xiwen LIU, Dixiong WANG, Jeffrey ZHENG, Merrilyn Mercy Adzo FLAGBENU
  • Publication number: 20230084321
    Abstract: Nonlinear on-chip optical devices using AlScN are described herein. In one aspect, an optical component having nonlinear characteristics can include a first substrate defining a refractive index; and a nonlinear layer, the nonlinear layer disposed on the first substrate, the nonlinear layer comprising an amount of scandium (Sc), and the nonlinear layer defining a refractive index that is higher than the refractive index of the first substrate.
    Type: Application
    Filed: July 29, 2022
    Publication date: March 16, 2023
    Inventors: Valerie J. Yoshioka, Jian Lu, Zichen Tang, Jicheng Jin, Roy H. Olsson, III, Bo Zhen
  • Publication number: 20210399138
    Abstract: Provided are ferroelectric field effect transistor (FeFET) based memory devices. These devices include aluminum scandium nitride (AlScN) as a ferroelectric dielectric and 2D chalcogenide semiconductors as a semiconductor channel in the transistor. The disclosed materials, devices and fabrication processes involved are compatible with back end of the line (BEOL) processing of a silicon based microchip and also compatible with silicon microprocessor fabrication.
    Type: Application
    Filed: June 22, 2021
    Publication date: December 23, 2021
    Inventors: Deep Jariwala, Roy H. Olsson, III, Xiwen Liu, Eric Andrew Stach, Kwan-Ho Kim
  • Patent number: 9549704
    Abstract: Embodiments of neural interfaces according to the present invention comprise sensor modules for sensing environmental attributes beyond the natural sensory capability of a subject, and communicating the attributes wirelessly to an external (ex-vivo) portable module attached to the subject. The ex-vivo module encodes and communicates the attributes via a transcutaneous inductively coupled link to an internal (in-vivo) module implanted within the subject. The in-vivo module converts the attribute information into electrical neural stimuli that are delivered to a peripheral nerve bundle within the subject, via an implanted electrode. Methods and apparatus according to the invention incorporate implantable batteries to power the in-vivo module allowing for transcutaneous bidirectional communication of low voltage (e.g. on the order of 5 volts) encoded signals as stimuli commands and neural responses, in a robust, low-error rate, communication channel with minimal effects to the subjects' skin.
    Type: Grant
    Filed: June 11, 2008
    Date of Patent: January 24, 2017
    Assignee: Sandia Corporation
    Inventors: Stephen P. Buerger, Roy H. Olsson, III, Kenneth E. Wojciechowski, David K. Novick, Deepesh K. Kholwadwala
  • Patent number: 9337800
    Abstract: A microresonator with an input electrode and an output electrode patterned thereon is described. The input electrode includes a series of stubs that are configured to isolate acoustic waves, such that the waves are not reflected into the microresonator. Such design results in reduction of spurious modes corresponding to the microresonator.
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: May 10, 2016
    Assignee: Sandia Corporation
    Inventors: Roy H. Olsson, III, Kenneth Wojciechowski, Darren W. Branch
  • Patent number: 8497747
    Abstract: A microelectromechanical (MEM) filter is disclosed which has a plurality of lattice networks formed on a substrate and electrically connected together in parallel. Each lattice network has a series resonant frequency and a shunt resonant frequency provided by one or more contour-mode resonators in the lattice network. Different types of contour-mode resonators including single input, single output resonators, differential resonators, balun resonators, and ring resonators can be used in MEM filter. The MEM filter can have a center frequency in the range of 10 MHz-10 GHz, with a filter bandwidth of up to about 1% when all of the lattice networks have the same series resonant frequency and the same shunt resonant frequency. The filter bandwidth can be increased up to about 5% by using unique series and shunt resonant frequencies for the lattice networks.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: July 30, 2013
    Assignee: Sandia Corporation
    Inventors: Kenneth E. Wojciechowski, Roy H. Olsson, III, Maryam Ziaei-Moayyed
  • Patent number: 8466754
    Abstract: The present invention is a method for reducing phase noise in oscillator signals. For example, the oscillator may be a low phase noise MEMS-based oscillator and may include a resonator (ex.—a MEMS resonator). Further, the resonator of the oscillator may be operated near a bifurcation point. Still further, the MEMS resonator may be parametrically pumped in such a way so as to redistribute the quadrature signal noise (ex.—phase noise) to in-phase noise (ex.—amplitude noise).
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: June 18, 2013
    Assignee: Rockwell Collins, Inc.
    Inventors: Vadim Olen, Jonathan A. Lovseth, Robert C. Potter, Robert A. Newgard, Roy H. Olsson, III, Kenneth E. Wojciechowski
  • Patent number: 8367305
    Abstract: A method is disclosed which calculates dimensions for a MEM resonator in terms of integer multiples of a grid width G for reticles used to fabricate the resonator, including an actual sub-width La=NG and an effective electrode width We=MG where N and M are integers which minimize a frequency error fe=fd?fa between a desired resonant frequency fd and an actual resonant frequency fa. The method can also be used to calculate an overall width Wo for the MEM resonator, and an effective electrode length Le which provides a desired motional impedance for the MEM resonator. The MEM resonator can then be fabricated using these values for La, We, Wo and Le. The method can also be applied to a number j of MEM resonators formed on a common substrate.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: February 5, 2013
    Assignee: Sandia Corporation
    Inventors: Kenneth E. Wojciechowski, Roy H. Olsson, III
  • Patent number: 7859350
    Abstract: A microfabricated ion frequency standard (i.e. an ion clock) is disclosed with a permanently-sealed vacuum package containing a source of ytterbium (Yb) ions and an octupole ion trap. The source of Yb ions is a micro-hotplate which generates Yb atoms which are then ionized by a ultraviolet light-emitting diode or a field-emission electron source. The octupole ion trap, which confines the Yb ions, is formed from suspended electrodes on a number of stacked-up substrates. A microwave source excites a ground-state transition frequency of the Yb ions, with a frequency-doubled vertical-external-cavity laser (VECSEL) then exciting the Yb ions up to an excited state to produce fluorescent light which is used to tune the microwave source to the ground-state transition frequency, with the microwave source providing a precise frequency output for the ion clock.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: December 28, 2010
    Assignee: Sandia Corporation
    Inventors: Peter Schwindt, Grant Biedermann, Matthew G. Blain, Daniel L. Stick, Darwin K. Serkland, Roy H. Olsson, III
  • Patent number: 7291310
    Abstract: A microsystem for determining clotting time of blood and a low-cost, single-use device for use therein are provided wherein the device has no moving parts or expensive optical sensors or magnets. The device includes a microfluidic channel and a microsensor at least partially in fluid communication with the channel. By analyzing changes in the sensor as a drop of blood flows down the microfluidic channel, the time at which the blood clots can be determined.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: November 6, 2007
    Assignee: The Regents of the University of Michigan
    Inventors: Steven M. Martin, Roy H. Olsson, III, Richard B. Brown, Robert K. Franklin