Abstract: The present disclosure is directed to additive manufacturing systems, components therein, and methods for their use. The additive manufacturing system comprises a powder material handling system comprising a virgin powder inlet. The virgin powder inlet is coupled to a virgin powder drum and configured to receive a virgin powder from the virgin powder drum. The additive manufacturing system further comprises a liquid material handling system comprising a binder inlet. The binder inlet is coupled to a binder drum and configured to receive a binder from the binder drum. The additive manufacturing system also comprises an additive manufacturing machine coupled to the powder material handling system and the liquid material handling system. The additive manufacturing machine receives the virgin powder and the binder from the powder material handling and liquid material handling systems and is configured to manufacture a work product using the virgin powder and the binder.

Abstract: A stripe-shaped excitation region is provided in an active layer of a double heterojunction laser device, the excitation region and the other region of the active layer being endowed with an effective refractive index difference or optical absorption coefficient difference therebetween, and a carrier injection region is provided contiguously to the excitation region, whereby the laser device exhibits a low ohmic resistance, effects a stable lower-order transverse mode oscillation and suppresses relaxation oscillations. By preventing the stripe-shaped excitation region and the carrier injection region from being exposed to reflective surfaces, the aforecited beneficial results can be realized over a wide range of operating currents, and a laser device of extremely high power density emission is achieved due to the increase of the threshold of the catastrophic optical damage on mirrors.

Abstract: In an active layer restricted by a pair of heterojunctions in a semiconductor laser, a stripe region and a contiguous region are made to have a difference in kinds and/or concentrations of impurity to give the stripe region a higher dielectric constant, preferably by about 0.01-1%, than the contiguous region whereby transverse laser oscillation confined to the active layer by the heterojunctions is further confined to the stripe region in a width direction parallel to the heterojunctions. The dielectric constant profile established in the active layer stabilizes the transverse mode and eliminates nonlinearities in the laser output - exciting current curve as well as other undesirable performance characteristics that are exhibited in conventional stripe-geometry lasers. The difference in the impurity gives the stripe region a narrower band gap of from about 5 to about 100 meV than the contiguous region.

Abstract: A semiconductor laser device in which a part of the laser output is reflected from an external reflector and injected into the laser element with a delay that is less than the relaxation oscillation period of the laser pulse output.

Abstract: A semiconductor laser device is disclosed in which an external light beam having a wavelength approximately the same as at least one of the wavelengths of the resonance axial mode for the modulation semiconductor laser to oscillate is injected into the optical resonator of the modulation semiconductor laser.