Abstract: A hybrid photonics device package is described. The hybrid photonics device package includes an electro-optic integrated circuit and a photonics integrated circuit. The electro-optic integrated circuit includes an optical structure and an electrode on a first substrate. The optical structure has a thin film electro-optic layer including lithium. The photonics integrated circuit includes a second substrate and a photonics component on the second substrate. The photonics component and the optical structure are optically coupled. One of the electro-optic integrated circuit and the photonics integrated circuit is mounted on an other of the electro-optic integrated circuit and the photonics integrated circuit.

Abstract: An electro-optic device is described. The electro-optic device includes at least one optical material having an electro-optic effect. Further, the optical material(s) include lithium. The optical material(s) have a slab and a ridge waveguide. The slab has a top surface. The slab includes free surfaces. Each of the free surfaces is at a nonzero angle from the top surface of the slab and mitigates stress in the slab.

Abstract: An electro-optic device is described. The electro-optic device includes a thin film electro-optic layer including lithium and a lithium barrier structure. The thin film electro-optic layer has a plurality of surfaces. The lithium barrier structure covers at least a portion of the plurality of surfaces.

Abstract: An optical device includes a substrate, an oxide layer on the substrate and an electro-optic device on the oxide layer. The oxide layer is at least one micrometer thick. The electro-optic device includes an electro-optic material having a thickness of not more than one micrometer. The silicon substrate, oxide layer, and the electro-optic material terminate at an edge. At least one of the silicon substrate has a thickness of at least five hundred micrometers or the edge includes a recessed region corresponding to a portion of the oxide layer.

Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.

Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.

Abstract: Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system.

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.

Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.

Abstract: Methods for fabricating a transistor include forming a dielectric material adjacent to a semiconductor, introducing non-hydrogenous ions into the dielectric material, and forming a control gate adjacent to the dielectric material. Transistors include source/drain regions in a semiconductor, a dielectric material adjacent to the semiconductor and containing non-hydrogenous ions, and a control gate adjacent to the dielectric material.