Abstract: A method of characterizing distortions in a lithographic process, and associated apparatuses. The method includes obtaining measurement data corresponding to a plurality of measurement locations on a substrate, the measurement data comprising measurements performed on a plurality of substrates, and comprising one or more measurements performed on one or more of the substrates for each of the measurement locations. For each of the measurement locations, a first quality value representing a quality metric and a noise value representing a noise metric is determined from the measurements performed at that measurement location. A plurality of distortion parameters is determined, each distortion parameter configured to characterize a systematic distortion in the quality metric and a statistical significance of the distortion parameters from the first quality value and from the noise value is determined. Systematic distortion is parameterized from the distortion parameters determined to be statistically significant.

Abstract: A first substrate (2002) has a calibration pattern applied to a first plurality of fields (2004) by a lithographic apparatus. Further substrates (2006, 2010) have calibration patterns applied to further pluralities of fields (2008, 2012). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates (2002, 2006, 2010) and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (2004, 2008, 2012) is gathered together in a database (2013) and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

Abstract: When using a scatterometer different portions of a target area may be at different focal depths. When the whole area is measured this results in part of it being out of focus. To compensate for this an array of lenses is placed in the back focal plane of the high numerical aperture lens.

Abstract: A method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus is disclosed. First a set of grid models is provided. Subsequently, alignment data are obtained by performing an alignment measurement on a plurality of alignment marks on a number of substrates. For each grid model it is checked whether the alignment data is suitable to solve the grid model. If so, the grid model is added to a subset of grid models. The grid model with lowest residuals is selected. In addition to alignment data, metrology data may be obtained by performing an overlay measurement on a plurality of overlay marks on the number of substrates. For each grid model of the subset simulated metrology data may then be determined that is used to determine overlay performance indicators. The grid model is then selected using the overlay performance indicators.

Abstract: An alignment apparatus for a substrate bonding system is provided with a first optical arm arranged to direct onto a detector radiation from a first alignment mark on a first substrate, and a second optical arm arranged to direct onto the detector radiation from a second alignment mark on a second substrate. The first alignment mark has a known location relative to a functional pattern provided on an opposite side of the first substrate, and the second alignment mark has a known location relative to a functional pattern provided on an opposite side of the second substrate. The substrate bonding system can be further provided with first and second substrate tables arranged to hold the first and second substrates such that they face one another, at least one of the substrate tables being movable in response to a signal output from the detector, thereby allowing the first and second substrates to be aligned with respect to each other for bonding.

Abstract: Correcting for misalignment of a substrate before it is exposed is performed using offset corrections and process corrections that are calculated based on alignment offset measurements of alignment marks and overlay measurements of overlay targets on substrates in previous batches.

Abstract: When using a scatterometer different portions of a target area may be at different focal depths. When the whole area is measured this results in part of it being out of focus. To compensate for this an array of lenses is placed in the back focal plane of the high numerical aperture lens.

Abstract: An alignment apparatus for a substrate bonding system is provided with a first optical arm arranged to direct onto a detector radiation from a first alignment mark on a first substrate, and a second optical arm arranged to direct onto the detector radiation from a second alignment mark on a second substrate. The first alignment mark has a known location relative to a functional pattern provided on an opposite side of the first substrate, and the second alignment mark has a known location relative to a functional pattern provided on an opposite side of the second substrate. The substrate bonding system can be further provided with first and second substrate tables arranged to hold the first and second substrates such that they face one another, at least one of the substrate tables being movable in response to a signal output from the detector, thereby allowing the first and second substrates to be aligned with respect to each other for bonding.

Abstract: Correcting for misalignment of a substrate before it is exposed is performed using offset corrections and process corrections that are calculated based on alignment offset measurements of alignment marks and overlay measurements of overlay targets on substrates in previous batches.

Abstract: A method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus is disclosed. First a set of grid models is provided. Subsequently, alignment data are obtained by performing an alignment measurement on a plurality of alignment marks on a number of substrates. For each grid model it is checked whether the alignment data is suitable to solve the grid model. If so, the grid model is added to a subset of grid models. The grid model with lowest residuals is selected. In addition to alignment data, metrology data may be obtained by performing an overlay measurement on a plurality of overlay marks on the number of substrates. For each grid model of the subset simulated metrology data may then be determined that is used to determine overlay performance indicators. The grid model is then selected using the overlay performance indicators.

Abstract: The invention relates to a method of optimizing an alignment strategy for processing batches of substrates in a lithographic projection apparatus. First, all substrates in a plurality of batches of substrates in the lithographic projection apparatus are sequentially aligned and exposed using a predefined alignment strategy. Then, alignment data is determined for each substrate in the plurality of batches of substrates. Next, at least one substrate in each batch of substrates is selected to render a set of selected substrates comprising at least one substrate in each batch. In a metrology tool, overlay data for each of the selected substrates is determined. Then, overlay indicator values for a predefined overlay indicator are calculated for the predefined alignment strategy and for other possible alignment strategies. In this calculation, the alignment data and the overlay data of the selected substrates is used.

Abstract: The invention relates to a method of optimizing an alignment strategy for processing batches of substrates in a lithographic projection apparatus. First, all substrates in a plurality of batches of substrates in the lithographic projection apparatus are sequentially aligned and exposed using a predefined alignment strategy. Then, alignment data is determined for each substrate in the plurality of batches of substrates. Next, at least one substrate in each batch of substrates is selected to render a set of selected substrates including at least one substrate in each batch. In a metrology tool, overlay data for each of the selected substrates is determined. Then, overlay indicator values for a predefined overlay indicator are calculated for the predefined alignment strategy and for other possible alignment strategies. In this calculation, the alignment data and the overlay data of the selected substrates is used.