Abstract: A micro light-emitting diode display device and a micro light-emitting diode structure. The micro light-emitting diode display device includes a circuit substrate and a plurality of display pixels, the display pixels are arranged on the circuit substrate and are electrically connected with the circuit substrate individually. Each display pixel includes a plurality of series-connection structures, and the light wavelengths of the series-connection structures are different. Each series-connection structure includes at least two micro light-emitting elements, and the light wavelengths of the at least two micro light-emitting elements are within a wavelength range of one color light. The circuit substrate provides a driving voltage to drive the series-connection structures of each display pixel.

Abstract: A grating adjustment apparatus includes a first electrode layer, a second electrode layer and a first substrate and a second substrate that are opposite to each other; the grating adjustment apparatus further includes a plurality of first driving lines, a plurality of second driving lines and a plurality of grating units arranged in the first direction, and is configured as: when the grating adjustment apparatus is powered on, the grating unit is capable of forming a light transmission unit and a shading unit, and opening positions and/or opening ratios of the grating unit are adjustable; and the plurality of grating units are divided into at least one group; for the grating units in the same group, at least two of the first sub-electrodes are electrically connected to different first driving lines, and at least two of the second sub-electrodes are electrically connected to different second driving lines.

Abstract: The present application relates to an array substrate and a display panel. In the present application, a first common line and a first sharing line are respectively disposed on two sides of a scan line, thereby preventing a situation in the prior art that the first sharing line penetrates a main pixel region and a sub-pixel region vertically, thereby improving an aperture ratio and a transmittance of the array substrate. The first common line, the first sharing line, and the scan line are disposed in a same layer, thereby further improving the transmittance of the array substrate.

Abstract: A video decoding method using a subblock temporal motion prediction for regular inter mode (sbAmvp mode). The method includes: receiving a bitstream comprising one or more syntax elements signaling coding unit (CU) level motion information associated with a CU, wherein the CU is encoded using regular inter mode; dividing the CU into a plurality of subblocks; and performing the sbAmvp mode on the plurality of subblocks.

Abstract: Disclosed are a capacitance-to-digital conversion circuit, a capacitance-to-digital conversion method and an electronic chip. The capacitance-to-digital conversion circuit includes a first module, a comparator and an adaptive range-shift module; the first module includes a successive approximation unit, a first adder, a first digital-to-analog converter, a second adder, a third adder and an integrating unit. The first module further includes a second digital-to-analog converter connected to the third adder. The comparator, the adaptive range-shift module and the first adder are connected in series and the comparator is connected to the second digital-to-analog converter. By the present application, the adverse influence caused by the parasitic and interference is well avoided, the capacitance-to-digital conversion circuit may work in a harsh environment, the robustness of the circuit is significantly improved and the application range of the circuit is expanded.

Abstract: A method and a kit for detecting Mycobacterium tuberculosis are provided. The method includes a step of performing a nested qPCR assay to a specimen. The nested qPCR assay includes a first round of amplification using external primers and a second round of amplification using internal primers and a probe. The external primers have sequences of SEQ ID NOs. 1 and 2, and the internal primers and the probe have sequences of SEQ ID NOs. 3 to 5.

Abstract: A device includes a first semiconductor fin, a second semiconductor fin, a source/drain epitaxial structure, a semiconductive cap, and a contact. The first semiconductor fin and the second semiconductor fin are over a substrate. The source/drain epitaxial structure is connected to the first semiconductor fin and the second semiconductor fin. The source/drain epitaxial structure includes a first protruding portion and a second protruding portion aligned with the first semiconductor fin and the second semiconductor fin, respectively. The semiconductive cap is on and in contact with the first protruding portion and the second protruding portion. A top surface of the semiconductive cap is lower than a top surface of the first protruding portion of the source/drain epitaxial structure. The contact is electrically connected to the source/drain epitaxial structure and covers the semiconductive cap.

Abstract: An image sensor includes a photoelectric conversion layer, a plurality of deep trench isolations, a first color filter, a first deflector, and a covering layer. The photoelectric conversion layer includes a first photodiode and a second photodiode. The deep trench isolations separate the first photodiode and the second photodiode, in which a pixel dimension is determined by a distance between two adjacent deep trench isolations. The first color filter is disposed on the first photodiode and the second photodiode. The first deflector is disposed on the first color filter. The covering layer covers and surrounds the first deflector. A refractive index of the covering layer is greater than a refractive index of the first deflector, and a difference value between the refractive index of the covering layer and the refractive index of the first deflector is in a range from 0.15 to 0.6.

Abstract: Disclosed is a method for controlling an electrochemical pump, comprising: providing an electrochemical pump, and causing a control circuit of the electrochemical pump to generate a pulse signal to enable an electrochemical reaction on electrodes of the electrochemical pump, wherein the pulse signal has alternating on-periods and off-periods where the pulse signal is off, and wherein each on-period has a plurality of on-times where the pulse signal is on and a plurality of off-times where the pulse signal is off, the on- and off-times being alternatingly arranged.

Abstract: Methods, system, and apparatus for substrate processing are provided for flowing a gas into a substrate processing chamber housing a substrate clamped to a chuck, wherein the gas is introduced at a location above the substrate; and while the gas is introduced, dechucking the substrate.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: The present disclosure provides a video data processing method. The method includes: receiving a bitstream; decoding a first index from the bitstream; determining a maximum number of an adaptive loop filter (ALF) for a component of a picture based on the first index; and processing pixels in the picture with the ALF.

Abstract: The present disclosure provides a video data processing method for cross-component sample adaptive offset (CCSAO). The method includes determining an index based on a vertical coordinate of a chroma sample within a picture; determining a luma sample based on the index; classifying the chroma sample based on a reconstructed value associated with the luma sample; determining an offset based on the classification; and adding the offset to a reconstructed value associated with the chroma sample.

Abstract: A method for video processing using Cross-Component Adaptive Loop Filter (CCALF) is provided. The method includes filtering decoded video content using a CCALF, wherein the CCALF is a 24-tap 9×9 filter.

Abstract: A video processing method includes: determining whether an inter predictor correction is enabled for a coding block; and when the inter predictor correction is enabled for the coding block, performing the inter predictor correction by: obtaining a plurality of predicted samples from a top boundary and a left boundary of a predicted block corresponding to the coding block; obtaining a plurality of reconstructed samples from top neighboring reconstructed samples and left neighboring reconstructed samples of the coding block; and deriving a corrected predicted block based on the plurality of the predicted samples, the plurality of the reconstructed samples and the predicted block.

Abstract: A wafer inspection system is provided. The wafer inspection system includes a memory unit configured to store an image of a device under test (DUT) on a wafer, an image-uploading unit configured to upload the image to a processing unit, and a processing unit. The processing unit is configured to identify a plurality of candidate regions on the image; generate a confidence score for each of the plurality of candidate regions, wherein the confidence score indicates a probability of a candidate region including a probe mark; select a first candidate region having the highest confidence score as a selected region; determine whether a second candidate region in the plurality of candidate regions includes the same probe mark as the first candidate region; and eliminate the second candidate region if the second candidate region includes the same probe mark as the first candidate region.

Abstract: A wafer inspection method is provided. The wafer inspection method includes identifying a plurality of candidate regions on an image of a DUT on a wafer; generating a confidence score for each of the plurality of candidate regions, wherein the confidence score indicates a probability of a candidate region including a probe mark; selecting a first candidate region having the highest confidence score as a selected region; determining whether a second candidate region in the plurality of candidate regions includes the same probe mark as the first candidate region; and eliminating the second candidate region if the second candidate region includes the same probe mark as the first candidate region.