Abstract: An optical sensor system includes a plurality of sets of optical sensors implemented on a substrate, with a plurality of sets of optical filters, wherein a set of optical filters of the plurality of sets of optical filters is associated with a set of optical sensors and a set of optical filters of the plurality of sets of optical filters includes a plurality of optical filters that are arranged in a pattern, with each optical filter of the plurality of optical filters configured to pass light in a different wavelength range of a predefined spectral range. Each set of optical filters operates to provide a bandpass response corresponding to the predefined spectral range and a set of optical filters is located atop an associated set of optical sensors, where at least two sets of optical filters of the plurality of sets of optical filters are configured to provide different bandpass responses.

Abstract: A mobile device includes one or more spectrometers, each with a plurality of spectral filters overlaying optical sensors, each of the one or more spectrometers having a sensing range within a predetermined range of optical wavelengths. Each of the one or more spectrometers is further positioned in the mobile device to capture light radiation incident to the mobile device and output information representative of captured light radiation to a processing module adapted to receive the output information and determine an accumulated light radiation for the mobile device. A notification engine is adapted to signal a user when the accumulated light radiation exceeds a predetermined threshold.

Abstract: A system for imaging a scene, includes a plurality of optical sensors arranged on an integrated circuit and a plurality of sets of interference filters, where each set of interference filters of the plurality of sets of interference filters includes a plurality of interference filters that are arranged in a pattern and each interference filter of the plurality of filters is configured to pass light in a different wavelength range, where each set of interference filters of the plurality of interference filters is associated with a spatial area of the scene. The system includes a plurality of rejection filters arranged in a pattern under each set of interference filters, where each rejection filter of the plurality of rejection filters is configured to substantially reject light of predetermined wavelengths. The system further includes one or more processors adapted to provide a spectral response for a spatial area of the scene associated with the set of interference filters.

Abstract: A method begins by generating a received light spectrum at time T1 for a scene using a spectral imager that includes a plurality of spectral sensors, where a spectral sensor includes a spectral filter overlaying one or more first optical sensors and the sensing range for the plurality of spectral sensors together include a spectrum of wavelength and outputting information representative of a spectral image for the scene at T1 to a processing module. The method continues by using an image sensor to image the scene at time T2, where the image sensor includes a plurality of second optical sensors, and outputting information representative of an image of the scene at T2 to the processing module where the image of the scene has a spatial resolution that is higher than the spatial resolution of the spectral image.

Abstract: A sensor system includes a plurality of optical sensors implemented in a pixel layer of an integrated circuit and a plurality of sets of optical filters implemented proximal to the pixel layer in a plurality of alternating filter layers. An optical filter of a set of optical filters includes a plurality of filter components implemented in a stack and is configured to pass a respective target wavelength range of light to one or more optical sensors of the plurality of optical sensors. One or more filter components of the plurality of filter components in a filter layer of the plurality of filter layers is common to a plurality of optical filters of a set of optical filters.

Abstract: A sensor system provides a plurality of sets of optical sensors configured in a layer and a plurality of sets of optical filters configured in a layer, where the bottom surface of the plurality of sets of optical filters is located proximal to the top surface of the plurality of sets of optical sensors and where a set of optical filters of the plurality of sets of optical filters includes a plurality of optical filters that are arranged in a pattern so that at least some optical filters of the plurality of optical filters are configured to pass light in a different wavelength range. The sensor system provides one or more rejection filters configured as a layer and a first set of optical elements, where the one or more rejection filters and the first set of optical elements are configured in a stack that is located above the top layer of the plurality of sets of optical filters.

Abstract: An optical sensor system includes a plurality of sets of optical sensors implemented on a substrate, with a plurality of sets of optical filters, wherein a set of optical filters of the plurality of sets of optical filters is associated with a set of optical sensors and a set of optical filters of the plurality of sets of optical filters includes a plurality of optical filters that are arranged in a pattern, with each optical filter of the plurality of optical filters configured to pass light in a different wavelength range of a predefined spectral range. Each set of optical filters operates to provide a bandpass response corresponding to the predefined spectral range and a set of optical filters is located atop an associated set of optical sensors, where at least two sets of optical filters of the plurality of sets of optical filters are configured to provide different bandpass responses.

Abstract: A system for imaging a scene, includes a plurality of optical sensors arranged on an integrated circuit and a plurality of sets of interference filters, where each set of interference filters of the plurality of sets of interference filters includes a plurality of interference filters that are arranged in a pattern and each interference filter of the plurality of filters is configured to pass light in a different wavelength range, where each set of interference filters of the plurality of interference filters is associated with a spatial area of the scene. The system includes a plurality of rejection filters arranged in a pattern under each set of interference filters, where each rejection filter of the plurality of rejection filters is configured to substantially reject light of predetermined wavelengths. The system further includes one or more processors adapted to provide a spectral response for a spatial area of the scene associated with the set of interference filters.

Abstract: An optical sensor system comprises an array of optical sensors arranged on an integrated circuit and a plurality of filters with the bottom surface of the plurality of filters located above the top surface of the array of optical sensors. The optical sensor system further comprises an angle-of-incidence layer that includes a top surface, a bottom surface, and a thickness Y, where the bottom surface of the angle-of-incidence layer is located a predetermined distance X from the top surface of the plurality of filters and the angle-of-incidence layer includes a plurality of collimating elements, with each collimating element of the angle-of-incidence layer having an aperture width Z.

Abstract: The present invention provides a method for providing a crystalline germanium layer on a crystalline base substrate having a crystalline surface. The method comprises cleaning the base substrate for removing contaminants and/or native oxides from the surface, providing an amorphous germanium layer on the surface of the base substrate while exposing to the base substrate to a hydrogen source such as e.g. a hydrogen plasma, a H2 flux or hydrogen originating from dissociation of GeH4 and/or to a non-reactive gas source such as N2, He, Ne, Ar, Kr, Xe, Rn or mixtures thereof, and crystallizing the amorphous germanium layer by annealing the base substrate so as to provide a crystalline germanium layer.

Abstract: The described system relates to a method for forming a layer of a mono-crystalline semiconductor material on a substrate, comprising providing a substrate, growing epitaxially a template comprising at least one monolayer of a semiconductor material on the substrate, thereafter depositing an amorphous layer of the semiconductor material on the template; performing a thermal treatment or a laser anneal, thereby converting substantially all of the amorphous layer of the semiconductor material into a mono-crystalline layer of the semiconductor material. According to an embodiment, the semiconductor material is Ge and the substrate is a Si substrate. The template is preferably a few monolayers thick.

Abstract: The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° C., exposing the substrate (1) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).

Abstract: The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method comprises heating the substrate (1) to a nitridation temperature between 400° C. and 940° C. while exposing the substrate (1) to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (5), onto the Ge surface (3) at a deposition temperature between 100° C. and 940° C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (5), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.

Abstract: The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° C., exposing the substrate (1) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).

Abstract: The present invention is related to a method for growing a layer of a mono-crystalline material on a substrate comprising loading a substrate having an exposed area made of a first mono-crystalline material in a process chamber, supplying a beam of neutral species of a second material towards the substrate in the presence of a diffusion limiting gas, such that the pressure in the process chamber is between 1×10?6 torr and 1×10?4 torr, so that the neutral species of the second material are adsorbed on the exposed area, thereby growing a mono-crystalline layer of said second material overlying and in contact with the first mono-crystalline material wherein said diffusion limiting gas is a non-reactive gas.

Abstract: The present invention provides a method for providing a crystalline germanium layer on a crystalline base substrate having a crystalline surface. The method comprises cleaning the base substrate for removing contaminants and/or native oxides from the surface, providing an amorphous germanium layer on the surface of the base substrate while exposing to the base substrate to a hydrogen source such as e.g. a hydrogen plasma, a H2 flux or hydrogen originating from dissociation of GeH4 and/or to a non-reactive gas source such as N2, He, Ne, Ar, Kr, Xe, Rn or mixtures thereof, and crystallising the amorphous germanium layer by annealing the base substrate so as to provide a crystalline germanium layer.

Abstract: The described system relates to a method for forming a layer of a mono-crystalline semiconductor material on a substrate comprising providing a substrate, growing epitaxially a template comprising at least one monolayer of a semiconductor material on the substrate, thereafter depositing an amorphous layer of said semiconductor material on the template, and performing a thermal treatment or a laser anneal, thereby converting substantially all of the amorphous layer of the semiconductor material into a mono-crystalline layer of said semiconductor material. According to an embodiment, the semiconductor material is Ge, and the substrate is a Si substrate. The template is preferably a few monolayers thick.

Abstract: The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method comprises heating the substrate (1) to a nitridation temperature between 400° C. and 940° C. while exposing the substrate (1) to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (5), onto the Ge surface (3) at a deposition temperature between 100° C. and 940° C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (5), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.