Abstract: A method and apparatus for pulsed jet cleaning of flat objects based on the principle of enhancing formation of droplets of the cleaning medium by increasing the boundary surface area between the jets emitted though the nozzles of the cleaning unit and the surrounding atmosphere. In various embodiments of the invention, these droplet formation enhancement means are located inside the nozzle at the nozzle outlet end and are made in the form of a jet splitter, threaded grooves on the inner surface of the nozzle body, or in the form of a thin tube for the supply of gas into the flow of the liquid cleaning medium for the formation of gas bubbles in the medium. The method also takes into account such factors as a mass ratio between the droplets and the contaminant particles, velocity of droplets, organization and sequence of jets that attacks the surface of the wafer and flows that wash-out the separated particles, etc.

Abstract: An apparatus for cleaning flat objects such as semiconductor wafers with a pulsed liquid jet emitted from a group of nozzles that may be installed on one or on both sides of the wafer installed in a vertically arranged rotating chuck. The apparatus is comprised of a series of individual processing units, such as a loading unit, cleaning units, drying unit, and an unloading unit arranged circumferentially around a universal industrial robot capable of reaching any of the units and transferring the wafers between the units. Drying is carried out in a horizontal position of the wafer and may combine spin-dry with chemical treatment for accelerating the drying process and for improving quality of the drying process. All units are located in a sealed enclosure with a controlled purity of the atmosphere inside the enclosure. Method of cleaning is also disclosed.

Abstract: Cleaning and drying of semiconductor wafers is carried out in a single-chamber type cleaning/drying apparatus for flat objects such as semiconductor wafer, where cleaning is carried out by impinging both sides of the wafer which rotates at a relatively low speed with jets of a washing liquid and where subsequent drying is carried out in the same chamber by increasing the rotation speed of the wafer and supplying an isopropyl-alcohol (IPA) mist onto the wafer from the top of the chamber. After the IPA forms a solution with the residue of water on the wafer, the drying process is accelerated by supplying gaseous nitrogen through nozzles arranged on both side of the coaxial with the wafer center. As a result, the IPA-water solution quickly evaporates without leaving traces of water drops on the dried surface.

Abstract: A single-chamber type cleaning-drying apparatus for flat objects, such as semiconductor wafers, wherein cleaning is carried out by impinging both sides of the wafer, which rotates at a relatively low speed, with jets of a washing liquid and wherein subsequent drying is carried out in the same chamber by increasing the rotation speed of the wafer and supplying isopropyl-alcohol (IPA) mist onto the wafer from the top of the chamber. After the IPA forms a solution with the residue of water on the wafer, the drying process is accelerated by supplying gaseous nitrogen through nozzles arranged on both sides of the wafer he coaxially with the wafer center. As a result, the IPA-water solution quickly evaporates without leaving traces of water drops on the dried surface.

Abstract: A single-chamber type cleaning-drying apparatus for flat objects, such as semiconductor wafers, wherein cleaning is carried out by impinging both sides of the wafer, which rotates at a relatively low speed, with jets of a washing liquid and wherein subsequent drying is carried out in the same chamber by increasing the rotation speed of the wafer and supplying isopropyl-alcohol (IPA) mist onto the wafer from the top of the chamber. After the IPA forms a solution with the residue of water on the wafer, the drying process is accelerated by supplying gaseous nitrogen through nozzles arranged on both sides of the wafer he coaxially with the wafer center. As a result, the IPA-water solution quickly evaporates without leaving traces of water drops on the dried surface.

Abstract: Cleaning and drying of semiconductor wafers is carried out in a single-chamber type cleaning/drying apparatus for flat objects such as semiconductor wafer, where cleaning is carried out by impinging both sides of the wafer which rotates at a relatively low speed with jets of a washing liquid and where subsequent drying is carried out in the same chamber by increasing the rotation speed of the wafer and supplying an isopropyl-alcohol (IPA) mist onto the wafer from the top of the chamber. After the IPA forms a solution with the residue of water on the wafer, the drying process is accelerated by supplying gaseous nitrogen through nozzles arranged on both side of the coaxial with the wafer center. As a result, the IPA-water solution quickly evaporates without leaving traces of water drops on the dried surface.

Abstract: The invention provides an apparatus and a method for cleaning semiconductor wafers in a wet cleaning process with the use of pulsed liquid jets. The apparatus contains a source of an ozonated cleaning solution impinged through nozzles onto the surface of a vertically arranged semiconductor wafer, or a similar object, in the form of a series of pulses that may be alternated with pulses of overheated cleaning steam-and-water mixture, hot gas, and optionally, of deionized water, emitted through respective individual nozzles. The ozonated cleaning water solution has a temperature of about 5° C., the overheated steam-and-water mixture is supplied at a temperature of about 200° C., and the pulse of the hot gas heated to about 100° C. follows the cold ozonated solution pulse in order to compensate for an abrupt temperature change between the cold solution pulse and the overheated steam-and-water mixture pulse.

Abstract: An apparatus for cleaning flat objects such as semiconductor wafers with a pulsed liquid jet emitted from a group of nozzles that may be installed on one or on both sides of the wafer installed in a vertically arranged rotating chuck. The apparatus is comprised of a series of individual processing units, such as a loading unit, cleaning units, drying unit, and an unloading unit arranged circumferentially around a universal industrial robot capable of reaching any of the units and transferring the wafers between the units. Drying is carried out in a horizontal position of the wafer and may combine spin-dry with chemical treatment for accelerating the drying process and for improving quality of the drying process. All units are located in a sealed enclosure with a controlled purity of the atmosphere inside the enclosure. Method of cleaning is also disclosed.

Abstract: A method and apparatus for pulsed jet cleaning of flat objects based on the principle of enhancing formation of droplets of the cleaning medium by increasing the boundary surface area between the jets emitted though the nozzles of the cleaning unit and the surrounding atmosphere. In various embodiments of the invention, these droplet formation enhancement means are located inside the nozzle at the nozzle outlet end and are made in the form of a jet splitter, threaded grooves on the inner surface of the nozzle body, or in the form of a thin tube for the supply of gas into the flow of the liquid cleaning medium for the formation of gas bubbles in the medium. The method also takes into account such factors as a mass ratio between the droplets and the contaminant particles, velocity of droplets, organization and sequence of jets that attacks the surface of the wafer and flows that wash-out the separated particles, etc.