Abstract: Pigment of formula wherein R1 is CONR4R5 or C(?NR6)NR7R8, R2, R3, R4 and R5 are each independently of the others H, C1-C5alkyl, or phenyl which is unsubstituted or substituted from 1 to 5 times by C1-C5alkyl or by halogen, R6 is phenyl which is unsubstituted or substituted from 1 to 4 times by C1-C5alkyl or by halogen, R7 is H or C1-C5alkyl, and R8 is a direct bond or a carbonyl bridge to R6, which pigment consists of primary particles the average aspect ratio of which is from 4 to 1, preferably from 3.5 to 1, especially from 3 to 1, and for the ellipses equivalent to the contours of the primary particles on a two-dimensional electron microscopic image have an average numerical eccentricity ? of from 0 to 0.80, the numerical eccentricity ? being defined as (formula), wherein a is the semimajor axis and b is the semiminor axis of the equivalent ellipse. That pigment preferably has a narrow particle size distribution and is, as are analogous pigments, prepared by a novel process.

Abstract: Pigment of formula wherein R1 is CONR4R5 or C(?NR6)NR7R8, R2, R3, R4 and R5 are each independently of the others H, C1-C5alkyl, or phenyl which is unsubstituted or substituted from 1 to 5 times by C1-C5alkyl or by halogen, R6 is phenyl which is unsubstituted or substituted from 1 to 4 times by C1-C5alkyl or by halogen, R7 is H or C1-C5alkyl, and R8 is a direct bond or a carbonyl bridge to R6, which pigment consists of primary particles the average aspect ratio of which is from 4 to 1, preferably from 3.5 to 1, especially from 3 to 1, and for the ellipses equivalent to the contours of the primary particles on a two-dimensional electron microscopic image have an average numerical eccentricity ? of from 0 to 0.80, the numerical eccentricity ? being defined as (formula), wherein a is the semimajor axis and b is the semiminor axis of the equivalent ellipse. That pigment preferably has a narrow particle size distribution and is, as are analogous pigments, prepared by a novel process.

Abstract: The invention relates to novel sulfur-containing (meth)acrylic monomers and compositions thereof characterized by a high refractive index, for optical and industrial applications. The invention also relates to a method for preparing high refractive index polymeric materials and more specifically to a method for formation of ultraviolet cast optical lenses and compositions thereof comprising the sulfur-containing (meth)acrylic monomers.

Abstract: A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.

Abstract: A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.