Abstract: A method and apparatus for treating a substrate and, in particular, making secondary adjustments to the results of a primary process applied to the substrate, leading to improved uniformity of the overall process, in which a substrate is positioned on a substrate holder; a scanning a beam of light is directed onto the surface of the substrate; and the amplitude of the scanned beam is varied by location based on a substrate signature.

Abstract: A method and apparatus for treating a substrate and, in particular, making secondary adjustments to the results of a primary process applied to the substrate, leading to improved uniformity of the overall process, in which a substrate is positioned on a substrate holder; a scanning a beam of light is directed onto the surface of the substrate; and the amplitude of the scanned beam is varied by location based on a substrate signature.

Abstract: A method and apparatus in which retroreflective materials and surfaces are used for determining the position, orientation and scale of work pieces in order to accurately place process beams thereon for the purpose of surface patterning or treatment.

Abstract: A method and apparatus for treating a substrate and, in particular, making secondary adjustments to the results of a primary process applied to the substrate, leading to improved uniformity of the overall process, in which a substrate is positioned on a substrate holder; a scanning a beam of light is directed onto the surface of the substrate; and the amplitude of the scanned beam is varied by location based on a substrate signature.

Abstract: A method and apparatus in which retroreflective materials and surfaces are used for determining the position, orientation and scale of work pieces in order to accurately place process beams thereon for the purpose of surface patterning or treatment.

Abstract: Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70° and 270°. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.

Abstract: A lithography scanner and track system is provided that includes an interference lithography system according to one embodiment. The scanner provides a first optical exposure of a wafer. The track system provides pre and post-processing functions on a wafer. The interference lithography system may be included within the scanner and may expose a wafer either before or after the first optical exposure. The interference lithography system may also be included within the track system as part of the pre or post processing. The first optical exposure may include optical photolithography.

Abstract: A method for providing regular line patterns using interference lithography and sidewall patterning techniques is provided according to one embodiment. The method comprising may include producing regularly spaced parallel lines on a template using interference lithography techniques and then depositing sidewalls on the longitudinal sides of the regularly spaced parallel lines using sidewall patterning techniques. Various deposition and etching steps may also be included. The embodiments of the invention may provide regular line patterns with a line density half the interference lithography line density. Various lithography techniques may also be used to crop rounded connecting resulting from the sidewall patterning and/or to alter portions of the line pattern.

Abstract: Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.

Abstract: Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.

Abstract: Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70° and 270°. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.