Patents by Inventor Rudolf Mitterer

Rudolf Mitterer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4156289
    Abstract: A semiconductor memory has at least one V-MOS transistor which includes a trench and a storage capacitor. A semiconductor substrate is doped with concentration centers of a first conductivity type and has a buried layer which is doped with concentration centers of a second conductivity type opposite to the first conductivity type. At least two additional layers are divided by the trench and have alternately differing conductivity types, the two additional layers and the buried layer being produced by diffusion and/or implantation.
    Type: Grant
    Filed: January 26, 1978
    Date of Patent: May 22, 1979
    Assignee: Siemens Aktiengesellschaft
    Inventors: Kurt Hoffmann, Rudolf Mitterer