Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

Abstract: A scanning electron beam apparatus with an Auger spectrometer. The apparatus includes at least an electron column for generating a primary electron beam, a magnetic objective lens configured to focus the primary electron beam onto a surface of a target substrate, and a spectrometer configured to detect Auger electrons emitted from the surface of the target substrate. The magnetic objective lens applies a magnetic field strength greater than 10 Gauss and less than 50 Gauss at the surface of the target substrate. Other embodiments, aspects and features are also disclosed.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

Abstract: An enhanced electron source in most respects similar to a standard cathode assembly for an electron gun includes an electron emitter surrounded by a suppressor electrode, the emitted electrons passing through an extractor electrode. Additionally, the suppressor electrode includes a small ring shaped permanent magnet surrounding the opening in the suppressor electrode through which the emitter tip protrudes. The resulting magnetic field is aligned with the beam axis, and includes a tail which forms a very short focal length magnetic lens immediately following the emitter tip. This magnetic field collimates the electron beam before it enters the downstream electrostatic gun lens, thus increasing the effective angular intensity of the cathode assembly. The aberrations of this collimating lens are very low so that its useful brightness is not reduced. Also the influence of guns lens aberrations is reduced because a smaller aperture angle in the gun lens may be used to obtain higher beam current.

Abstract: A solid state electron or x-ray detector is mounted within the time-varying magnetic deflection fields of a charged particle beam system. A minimum volume of high resistivity conductors and insulating materials are used in the mounting to minimize eddy currents that otherwise cause dynamic deflection distortions. Segmented conductive elastomer members make electrical and mechanical contact with the active surface of the detector. A flexible PC board connects the detector active areas to external signal processing electronics.