Abstract: A method of fabricating an optical modulator on a silicon substrate, comprising: forming a silicon nitride layer on the silicon substrate; forming a first polycrystalline silicon layer (PSL) on the silicon nitride layer; patterning the first PSL; forming a first silicon dioxide layer (SDL) on the first patterned PSL; patterning the first SDL; forming a second PSL on the first patterned SDL; patterning the second PSL; forming a second SDL on the second patterned PSL; patterning the second SDL; forming a third PSL on the second patterned SDL; patterning the third PSL; forming a metal layer on the third patterned PSL; patterning the metal layer; removing the first and second SDLs to effect release of first and second side reflectors; forming an active layer on the metal layer; and patterning the active layer or stack to form a base reflector and associated conductive traces for biasing.

Abstract: An optical modulator used for optically modulating electromagnetic energy. The optical modulator comprises a substrate and three substantially planar reflectors arranged substantially mutually orthogonal to each other. The planar reflectors comprise a base reflector disposed substantially in the plane of the substrate and first and second side reflectors operably coupled to the base reflector. The optical modulator further comprises a pair of electrically conductive traces operably connected to the base reflector, an electrically conductive pad operably connected to each of the conductive traces, at least one material layer deposited on the base reflector by which its reflection properties may be altered or modulated with an applied voltage, and a biasing source operably coupled to said conductive pads for providing a modulated voltage to the base reflector.