Abstract: A force sensor module according to an embodiment of the present disclosure includes a plurality of force sensors. Each of the force sensor includes a plurality of sensor sections having force detection directions different from each other, and a flexible rubber member that is provided to cover the plurality of sensor sections. The rubber member is configured to transmit a force inputted from outside to the plurality of force sensors by deformation corresponding to the force.

Abstract: A light receiver 212u provided on the upper side and a light receiver 212d provided on the lower side with respect to the optical axis of a light emitter 211 generate light reception signals corresponding to the light reception intensity of emitted light from the light emitter 211. A liquid level state determiner 30 determines a liquid level state on the basis of a signal level difference between the light reception signal generated by the light receiver 212u and the light reception signal generated by the light receiver 212d. It is not required to perform processing of captured image data, and even in a case where a liquid temperature is substantially equal to the outside air temperature, the state of a liquid level can be easily grasped.

Abstract: A control device that controls an operation of a robot for alerting a human is provided. A control device that controls a robot includes an acquiring unit that acquires field of view information of a human and a control unit that controls an operation of an alert unit provided on the robot based on the field of view information. The control unit controls the alert unit such that the alert unit performs an alert operation according to a target task of the robot within an auxiliary field of view area of the human. The alert unit includes a manipulator provided on the robot. The alert operation includes an operation of the manipulator gripping an object relating to the target task of the robot.

Abstract: A power storage device includes a power storage unit including one or a plurality of cells, a first controller for performing control relating to the power storage unit, a first power line for supplying a first power to be output from the power storage unit to a load, a second power line for supplying a second power smaller than the first power to a second controller included in an external device, and a communication line used by the first and second controllers to communicate with each other.

Abstract: A photoelectric conversion element comprises: a first electrode layer 12; a compound-based photoelectric conversion layer 13 disposed on the first electrode layer 12; a buffer layer 15 disposed on the compound-based photoelectric conversion layer 13 comprising a mixed crystal of ZnO and ZnS, wherein a ratio of the number of S atoms to the number of Zn atoms is in a range of 0.290 to 0.493; and a second electrode layer 16 disposed on the buffer layer 15.

Abstract: Disclosed herein is a control apparatus, including: a discrimination section configured to discriminate a plurality of battery units which are to share and output electric power required by a load; and a control section configured to carry out discharge control for the battery units in response to a situation of each of batteries which the battery units individually have.

Abstract: In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device is provided with an electrode layer, a first semiconductor layer that is positioned on the electrode layer and contains a polycrystalline semiconductor, and a second semiconductor layer that is positioned on/above the first semiconductor layer and forms a p-n junction with the first semiconductor layer, and an average grain diameter of crystal grains in the first semiconductor layer is larger near the surface on the electrode layer side of the first semiconductor layer than the center of the first semiconductor layer in a thickness direction of the first semiconductor layer. Furthermore, the average grain diameter of the crystal grains in the first semiconductor layer is larger in a surface portion on the second semiconductor layer side of the first semiconductor layer than in the central portion.

Abstract: A control system includes a first device configured to receive a first voltage, and convert the first voltage to a second voltage that varies according to a variation of the received first voltage. The control system also includes a second device configured to receive the second voltage and to change a charging rate of an energy storage device according to a variation of the received second voltage.

Abstract: A battery apparatus and an electric vehicle including the battery apparatus are provided. The battery apparatus including a first battery module and a second battery module that are connected in parallel and have different characteristics, wherein a first maximum output voltage of the first battery module is set to be larger than a second maximum output voltage of the second battery module, and a first use range of the first battery module is set to differ from a second use range of the second battery module.

Abstract: A power storage device includes a power storage unit including one or a plurality of cells, a first controller for performing control relating to the power storage unit, a first power line for supplying a first power to be output from the power storage unit to a load, a second power line for supplying a second power smaller than the first power to a second controller included in an external device, and a communication line used by the first and second controllers to communicate with each other.

Abstract: Disclosed herein is a control system, including: a first apparatus configured to adjust an output voltage thereof so that the output voltage may be included in a range determined in advance in response to a variation of an input voltage thereto from an electric power generation section; and a second apparatus configured to change a charge rate into a battery in response to the variation of the input voltage supplied from the first apparatus, wherein when a state in which the output voltage from the first apparatus is near to a lower limit thereof continues for a period longer than a period of time set in advance, one of two or more lower limits prepared in advance is selected as the value of the lower limit in accordance with to which one of sections set in advance input current from the electric power generation section belongs.

Abstract: The control system includes, for example, a plurality of first devices and at least one second device connected to each of the plurality of first devices. The first device includes a plurality of conversion units configured to convert first voltage supplied from a power generator to second voltage in accordance with a level of the first voltage, and the second device includes a power storage unit and a charging control unit configured to control charging the power storage unit. The second voltage output from at least one conversion unit out of the plurality of conversion units is supplied to the second device, and the charging control unit controls charging the power storage unit in accordance with fluctuation of the second voltage.

Abstract: A photoelectric conversion efficiency of a photoelectric conversion device is improved. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer disposed on the electrode layer and including a group I-III-VI compound and oxygen element, and a second semiconductor layer disposed on the first semiconductor layer and forming a pn junction with the first semiconductor layer, and an atomic concentration of the oxygen element in the first semiconductor layer is lower in a surface portion on the electrode layer side than in a central portion of the first semiconductor layer in a lamination direction thereof.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract: In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device is provided with an electrode layer, a first semiconductor layer that is positioned on the electrode layer and contains a polycrystalline semiconductor, and a second semiconductor layer that is positioned on/above the first semiconductor layer and forms a p-n junction with the first semiconductor layer, and an average grain diameter of crystal grains in the first semiconductor layer is larger near the surface on the electrode layer side of the first semiconductor layer than the center of the first semiconductor layer in a thickness direction of the first semiconductor layer. Furthermore, the average grain diameter of the crystal grains in the first semiconductor layer is larger in a surface portion on the second semiconductor layer side of the first semiconductor layer than in the central portion.

Abstract: A control system includes a first device configured to receive a first voltage, and convert the first voltage to a second voltage that varies according to a variation of the received first voltage. The control system also includes a second device configured to receive the second voltage and to change a charging rate of an energy storage device according to a variation of the received second voltage.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

Abstract: It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the electrode layer and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer located on the first semiconductor layer and forming a pn junction with the first semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has a higher molar concentration of oxygen in a part located on the electrode layer side with respect to a center portion in a lamination direction of the first semiconductor layer than a molar concentration of oxygen in the whole of the first semiconductor layer.

Abstract: A photoelectric converter is disclosed. The photoelectric converter includes an electrode layer and a semiconductor layer. The semiconductor layer is on the electrode layer. The semiconductor layer contains a chalcopyrite compound semiconductor. The semiconductor layer comprises a plurality of sub-layers. The plurality of sub-layers comprises a first sub-layer. The first sub-layer is located closest to the electrode layer. The first sub-layer has a first thickness smaller than an average thickness of the rest of the plurality of sub-layers.