Patents by Inventor Rui Ma

Rui Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230037494
    Abstract: A high-speed real-time data transmission method includes performing deduplication processing on first encoded data from a transmission device to obtain target data. The first encoded data is obtained by encoding corresponding data using a first encoding algorithm. The method further includes encoding the target data using a second encoding algorithm to obtain second encoded data, and sending the second encoded data to a receiving device. A compression ratio of the second encoding algorithm is greater than a compression ratio of the first encoding algorithm.
    Type: Application
    Filed: February 25, 2022
    Publication date: February 9, 2023
    Inventors: Rui MA, Bojie YU, Bin LI
  • Patent number: 11567018
    Abstract: A performance evaluation device and a design method of a cement for well cementing in a penetrated hydrate layer are provided. The performance evaluation device includes an equivalent wellbore, an inner circulation system, an outer circulation system, a thermal insulation cover, a bracket, a temperature sensing system, and a cement mold. The device can simulate a true downhole situation, conduct an evaluation experiment on the heat insulation performance of a cementing cement, and conduct experiments at different temperatures with automatic temperature control. The design method is to use a low-hydration, early-strength, and heat-insulating cement slurry system during the well cementing in a penetrated hydrate layer, where the low-hydration and early-strength characteristics ensure the effective sealing of a hydrate layer during a cementing process, and the heat insulation characteristic results in low heat conductivity and thus can ensure the stability of a hydrate layer during a production operation.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: January 31, 2023
    Assignee: CHINA UNIVERSITY OF PETROLEUM (EAST CHINA)
    Inventors: Huajie Liu, Yuhuan Bu, Shenglai Guo, Chang Lu, Xinyang Guo, Shengda Shen, Rui Ma
  • Patent number: 11559230
    Abstract: This document discusses, among other things, systems and methods to compensate for the effects of temperature on sensors, such as analyte sensor. An example method may include determining a temperature-compensated glucose concentration level by receiving a temperature signal indicative of a temperature parameter of an external component, receiving a glucose signal indicative of an in vivo glucose concentration level, and determining a compensated glucose concentration level based on the glucose signal, the temperature signal, and a delay parameter.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: January 24, 2023
    Assignee: Dexcom, Inc.
    Inventors: Anna Claire Harley-Trochimczyk, Sebastian Böhm, Rui Ma, Disha B. Sheth, Minglian Shi, Kamuran Turksoy
  • Publication number: 20230012488
    Abstract: A display substrate and a display device are disclosed. The display substrate includes a base substrate and a plurality of shift register units; each of the plurality of shift register units includes an input circuit, an output circuit, a first reset circuit and a frame reset signal connection wire; the frame reset signal connection wire and is configured to provide a frame reset signal to the first reset circuit; the first reset circuit is configured to respond to the frame reset signal, so as to reset a first node and an output end within a time period between two display frames of the display substrate; the first reset circuit includes a first transistor and a second transistor, and the frame reset signal connection wire, a gate of the first transistor and a gate of the second transistor are provided on a first conductive layer.
    Type: Application
    Filed: May 19, 2021
    Publication date: January 19, 2023
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rui MA, Xiaoye MA, Xianjie SHAO, Ruifang DU
  • Publication number: 20230018612
    Abstract: Provided are a cobalt-free system, a positive electrode slurry, a slurry homogenization method therefor, and the use thereof. The cobalt-free system comprises a cobalt-free material, a binder, a conductive agent and a pH regulator. The cobalt-free system can reduce the rebound degree of the viscosity of a slurry after leaving to stand to the same degree as that of a ternary 811 single crystal, and can also improve the stability of the coating surface density of the cobalt-free material to the same level as that of a ternary material.
    Type: Application
    Filed: October 30, 2020
    Publication date: January 19, 2023
    Applicant: SVolt Energy Technology Co., Ltd.
    Inventors: Xia Su, Hongxin Yang, Xu Gao, Daixing Wang, Bisheng Luo, Rui Ma
  • Publication number: 20220416022
    Abstract: Substrate-less nanowire-based lateral diode integrated circuit structures, and methods of fabricating substrate-less nanowire-based lateral diode integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a stack of nanowires. A plurality of P-type epitaxial structures is over the stack of nanowires. A plurality of N-type epitaxial structures is over the stack of nanowires. One or more gate structures is over the stack of nanowires. A semiconductor material is between and in contact with vertically adjacent ones of the stack of nanowires.
    Type: Application
    Filed: June 24, 2021
    Publication date: December 29, 2022
    Inventors: Nicholas THOMSON, Kalyan KOLLURU, Ayan KAR, Rui MA, Benjamin ORR, Nathan JACK, Biswajeet GUHA, Brian GREENE, Lin HU, Chung-Hsun LIN, Sabih OMAR
  • Publication number: 20220415276
    Abstract: A shift register includes an input sub-circuit, a first noise reduction sub-circuit, and a first pull-down sub-circuit. The first noise reduction sub-circuit is coupled to the pull-up node, the first pull-down node and a first voltage signal terminal, and is configured to transmit a first voltage signal to the pull-up node under control of the first pull-down node; the input sub-circuit is coupled to the pull-up node and a signal input terminal, and is configured to transmit an input signal to the pull-up node in response to the input signal; the first pull-down sub-circuit is coupled to the signal input terminal, the first pull-down node and the first voltage signal terminal, and is configured to transmit the first voltage signal to the first pull-down node in response to the input signal, so that the first noise reduction sub-circuit stops transmitting the first voltage signal to the pull-up node.
    Type: Application
    Filed: February 19, 2020
    Publication date: December 29, 2022
    Inventors: Rui MA, Xiaoye MA, Ruifang DU
  • Publication number: 20220415877
    Abstract: A semiconductor device includes a first interconnect and a second interconnect, a substrate between the first and second interconnects and one or more wells on the substrate on a first level. A second level includes a first fin and a second fin, each on the one or more wells, where the first fin and the one or more wells include dopants of a first conductivity type and the second fin includes a dopant of a second conductivity type. A third fin is over a first region between the substrate and the first interconnect, and a fourth fin is over a second region between the substrate and the second interconnect. A third interconnect is electrically coupled between the first interconnect and the first fin and a fourth interconnect is electrically coupled between the second interconnect and the second fin.
    Type: Application
    Filed: June 25, 2021
    Publication date: December 29, 2022
    Applicant: Intel Corporation
    Inventors: Benjamin Orr, Rohit Grover, Nathan Jack, Nicholas Thomson, Rui Ma, Ayan Kar, Kalyan Kolluru
  • Publication number: 20220415925
    Abstract: Substrate-less lateral diode integrated circuit structures, and methods of fabricating substrate-less lateral diode integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin or a stack of nanowires. A plurality of P-type epitaxial structures is over the fin or stack of nanowires. A plurality of N-type epitaxial structures is over the fin or stack of nanowires. One or more spacings are in locations over the fin or stack of nanowires, a corresponding one of the one or more spacings extending between neighboring ones of the plurality of P-type epitaxial structures and the plurality of N-type epitaxial structures.
    Type: Application
    Filed: June 25, 2021
    Publication date: December 29, 2022
    Inventors: Nicholas THOMSON, Kalyan KOLLURU, Ayan KAR, Rui MA, Benjamin ORR, Nathan JACK, Biswajeet GUHA, Brian GREENE, Lin HU, Chung-Hsun LIN
  • Publication number: 20220415881
    Abstract: Substrate-less silicon controlled rectifier (SCR) integrated circuit structures, and methods of fabricating substrate-less silicon controlled rectifier (SCR) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin portion and a second fin portion that meet at a junction. A plurality of gate structures is over the first fin portion and a second fin portion. A plurality of P-type epitaxial structures and N-type epitaxial structures is between corresponding adjacent ones of the plurality of gate structures. Pairs of the P-type epitaxial structures alternate with pairs of the N-type epitaxial structures.
    Type: Application
    Filed: June 24, 2021
    Publication date: December 29, 2022
    Inventors: Rui MA, Kalyan KOLLURU, Nicholas THOMSON, Ayan KAR, Benjamin ORR, Nathan JACK, Biswajeet GUHA, Brian GREENE, Chung-Hsun LIN
  • Publication number: 20220415880
    Abstract: Substrate-less diode, bipolar and feedthrough integrated circuit structures, and methods of fabricating substrate-less diode, bipolar and feedthrough integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a semiconductor structure. A plurality of gate structures is over the semiconductor structure. A plurality of P-type epitaxial structures is over the semiconductor structure. A plurality of N-type epitaxial structures is over the semiconductor structure. One or more open locations is between corresponding ones of the plurality of gate structures. A backside contact is connected directly to one of the pluralities of P-type and N-type epitaxial structures.
    Type: Application
    Filed: June 24, 2021
    Publication date: December 29, 2022
    Inventors: Ayan KAR, Kalyan KOLLURU, Nicholas THOMSON, Rui MA, Benjamin ORR, Nathan JACK, Mauro KOBRINSKY, Patrick MORROW, Chung-Hsun LIN
  • Patent number: 11533469
    Abstract: The present application provides a panoramic video picture quality display method and device. Attention position information of a user at different time points in a preset period of time is obtained, the attention position information includes a picture horizontal angle; an attention information curve is created in a polar coordinate system, the attention information curve takes the time point as a polar radius and the picture horizontal angle obtained at the time point as a polar angle; and a picture quality parameter can also be obtained and the picture quality parameter is marked on the attention information curve to display the picture quality parameter.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: December 20, 2022
    Assignee: KANDAO TECHNOLOGY CO., LTD.
    Inventors: Xiaoke Jiang, Rui Ma, Zhiyou Ma
  • Publication number: 20220396802
    Abstract: Provided are a Cinnamomum burmannii monoterpene synthase CbTPS1, an amino acid sequence thereof, a nucleic acid molecule encoding the protein, an use thereof in preparing the monoterpene synthase, and a method for preparing dextrorotatory borneol by using the Cinnamomum burmannii monoterpene synthase CbTPS1.
    Type: Application
    Filed: November 5, 2020
    Publication date: December 15, 2022
    Applicant: Sichuan Honghe Biotechnology Co., Ltd.
    Inventors: Luqi Huang, Ping Su, Rui Ma, Guanghong Cui, Juan Guo, Baolong Jin, Yating Hu, Jichen Bao
  • Patent number: 11526077
    Abstract: The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: December 13, 2022
    Assignees: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Wei Li, Tongshang Su, Guangyao Li, Yingbin Hu, Rui Ma, Jifeng Shao, Yang Zhang, Jianye Zhang
  • Publication number: 20220383804
    Abstract: Disclosed are a gate driving circuit and a display device. According to the gate driving circuit, in every five adjacent shift registers, the output control end of the first shift register is electrically connected to the input signal end of the fifth shift register; in every six adjacent shift registers, the output control end of the sixth shift register is electrically connected to the reset signal end of the first shift register.
    Type: Application
    Filed: February 3, 2021
    Publication date: December 1, 2022
    Inventors: Rui MA, Xiaoye MA, Xianjie SHAO, Ruifang DU
  • Patent number: 11514835
    Abstract: The present disclosure relates to a display substrate, a method for driving the same, and a display panel. The display substrate includes a base substrate as well as gate lines, data lines and a gate driver on the base substrate, the gate line being connected to the gate driver, and electrostatic rings and control components corresponding to at least one gate line are further disposed on the base substrate, each of the gate lines being connected to the electrostatic ring by a corresponding control component. The electrostatic ring is configured to load a control voltage to turn on the corresponding control component after the display panel is turned off, and the corresponding control component is configured to be turned on to change a voltage on the gate line into a turn-on voltage after the display panel is turned off.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: November 29, 2022
    Assignees: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ruifang Du, Xibin Shao, Rui Ma, Xiaoye Ma
  • Patent number: 11501692
    Abstract: The present application discloses a shift-register circuit including a shift-register unit and a shutdown-discharge sub-circuit. The shift-register unit is coupled to a clock port, a first reference voltage port, a second reference voltage port, and an output port and configured to set a voltage level at a pull-up node to control a clock signal from the clock port being outputted to the output port to drive a display panel during a display period. The shutdown discharge sub-circuit is configured to at least simultaneously receive at least one shutdown signal at a first voltage level from a shutdown-discharge control port and a second signal at the first voltage level from the second reference voltage port to start a shutdown period to discharge at least one of the pull-up node and the output port.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: November 15, 2022
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Xibin Shao, Zhangtao Wang, Rui Ma, Tong Yang
  • Publication number: 20220348691
    Abstract: Provided are a Blumea balsamifera monoterpene synthase BbTPS3 and related biological materials thereof and use thereof. BbTPS3 is: A1) a protein having the amino acid sequence shown in SEQ ID NO: 2; A2) a fusion protein obtained by linking protein-tags at the N-terminus or/and the C-terminus of the protein shown in SEQ ID NO: 2; and A3) a protein having at least 90% identity and the same function as the protein shown in A1), which is obtained by performing substitution and/or deletion and/or addition of one or more amino acid residues on the amino acid sequence shown in SEQ ID NO: 2. BbTPS3 can catalyze GPP to form l-borneol, and can be used to regulate and produce plant monoterpene compounds and cultivate Blumea balsamifera (L.) DC.
    Type: Application
    Filed: August 20, 2020
    Publication date: November 3, 2022
    Applicant: Sichuan Honghe Biotechnology Co., Ltd.
    Inventors: Luqi Huang, Ping Su, Rui Ma, Wei Gao, Guanghong Cui, Baolong Jin, Yating Hu, Jichen Bao, Juan Guo
  • Patent number: 11484233
    Abstract: This document discusses, among other things, systems and methods to compensate for the effects of temperature on sensors, such as analyte sensor. An example method may include determining a temperature-compensated glucose concentration level by receiving a temperature signal indicative of a temperature parameter of an external component, receiving a glucose signal indicative of an in vivo glucose concentration level, and determining a compensated glucose concentration level based on the glucose signal, the temperature signal, and a delay parameter.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: November 1, 2022
    Assignee: Dexcom, Inc.
    Inventors: Anna Claire Harley-Trochimczyk, Sebastian Böhm, Rui Ma, Disha B. Sheth, Minglian Shi, Kamuran Turksoy
  • Patent number: 11484232
    Abstract: This document discusses, among other things, systems and methods to compensate for the effects of temperature on sensors, such as analyte sensor. An example method may include determining a temperature-compensated glucose concentration level by receiving a temperature signal indicative of a temperature parameter of an external component, receiving a glucose signal indicative of an in vivo glucose concentration level, and determining a compensated glucose concentration level based on the glucose signal, the temperature signal, and a delay parameter.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: November 1, 2022
    Assignee: Dexcom, Inc.
    Inventors: Anna Claire Harley-Trochimczyk, Sebastian Böhm, Rui Ma, Disha B. Sheth, Minglian Shi, Kamuran Turksoy