Abstract: Provided are Chemical Mechanical Planarization (CMP) compositions that offer high and tunable Cu removal rates and low Cu static etching rates for polishing the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP compositions also provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, TiN, and SiN; and dielectric films, such as TEOS, low-k, and ultra-low-k films. The CMP polishing compositions comprise abrasive, oxidizer, at least two chelators selected from the group consisting of amino acids, amino acid derivatives, and combinations therefore; the Cu static etching reducing agents include, but not limited to, organic alkyl sulfonic acids with straight or branched alkyl chains, and salts of organic alkyl sulfonic acids.

Abstract: A method for developing or improving a process for producing a product from a material comprising steps of acquiring the composition for at least two slurries as raw material data (17) for the CMP based manufacturing process and its relevant parameters (2) by using a Data Collecting computer (9); physically performing specific method steps of a CMP process; measuring relevant parameters of the used slurries and the physically performed CMP process to determine the CMP process performance by using the Data Collecting computer (9); analyzing the measured data about the relevant parameters with a specific software performed on an Analyzing computer (11) by creating for the software and applying with it a predictive model using Machine Learning to understand the intercorrelation of the different parameters and using the results to improve the CMP process performance and the resulting product quality of the CMP based manufacturing process.

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Abstract: Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (?100 nm, ?50 nm, ?40 nm, ?30 nm, or ?20 nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Abstract: A current collection apparatus and its method of processing for a solid oxide fuel cell, which mainly includes using screen printing process to print conductive adhesive onto the surface of the electrode of solid oxide fuel cell (SOFC), forming a current collection layer with drying process, using an appropriate amount of conductive adhesive to paste a conductive wire onto the current collection layer, forming an adhesion layer through drying, fixing the conductive wire on the electrode surface with an appropriate amount of ceramic adhesive, and forming a fixing layer after baking. A good connection is hence made between metal conductive wire and electrode through current collection layer, not only the interface impedance between electrode and current collection layer can be reduced effectively, but also the output power density of the SOFC unit cell can be enhanced, and stable as well as long term power output can be provided.

Abstract: A method and apparatus for energy conversion cycle based on Solid Oxide Fuel Cell (SOFC) and utilizing CO2 source (referred to as SOFC-CO2-ECC) adopt CO2 as energy sources from waste/stock gas or convert and fix it in the useful compounds. CO2 is converted into CO and O2 via simultaneously catalytic and electrochemical reactions in SOFC for power generation and CO2 cracking. Furthermore, CO is used either as the fuel in SOFC for power generation or starting materials in the chemical reactors to produce CO-derivatives of energy source materials and useful chemical compounds. Hence, SOFC-CO2-ECC is an active or scientific carbon cycle with zero emission of CO2.

Abstract: A current collection apparatus and its method of processing for a solid oxide fuel cell, which mainly includes using screen printing process to print conductive adhesive onto the surface of the electrode of solid oxide fuel cell (SOFC), forming a current collection layer with drying process, using an appropriate amount of conductive adhesive to paste a conductive wire onto the current collection layer, forming an adhesion layer through drying, fixing the conductive wire on the electrode surface with an appropriate amount of ceramic adhesive, and forming a fixing layer after baking. A good connection is hence made between metal conductive wire and electrode through current collection layer, not only the interface impedance between electrode and current collection layer can be reduced effectively, but also the output power density of the SOFC unit cell can be enhanced, and stable as well as long term power output can be provided.

Abstract: A process and apparatus of “Solid Oxide Fuel Cell (SOFC)-CO2 Energy Conversion Cycle (referred to as SOFC-CO2-ECC)” are invented to adopt CO2 as energy sources from waste/stock gas or convert and fix it in the useful compounds. CO2 is converted into CO and O2 via simultaneously catalytic and electrochemical reactions in SOFC for power generation and CO2 cracking. Furthermore, CO is used either as the fuel in SOFC for power generation or starting materials in the chemical reactors to produce CO-derivatives of energy source materials and useful chemical compounds. Hence, SOFC-CO2-ECC is an active or scientific carbon cycle with zero emission of CO2. Thus, the efficacy of environmental protection via solving the problem of CO2 greenhouse effect is achieved, so as to grasp of the “Right of Carbon Emission Trading” issues.

Abstract: A method for producing nano-scale theta (?)-phase alumina microparticles is disclosed. The nano-scale ?-phase alumina microparticles are uniform in particle size and highly phase-pure. They are obtained by controlling the ratio of boehmite mixed with the ?-phase alumina initial powders, followed by at least one phase transformation. Therefore, the nano-scale ?-phase alumina microparticles produced by the present method have more uniform particle size and highly purer phase. As such for the production of nano-scale ?-phase alumina microparticles, the present method saves more process time and cost, and it provides an advantage such as the clean production.

Abstract: A method for fabricating an ?-Al2O3 powder with a size distribution substantially ranging from 30 nm to 100 nm, wherein the method comprises the following steps: First, at least one transition phase Al2O3 crystallite is provided, and then a coating process is conducted on the Al2O3 crystallite coating an aluminum compound on the Al2O3 crystallite to form a plurality of agglomerates having a size distribution substantially ranging from 50 nm to 200 nm. Subsequently, the agglomerates are thermally treated to form ?-Al2O3 powder.

Abstract: A method for producing nano-scale theta (?)-phase alumina microparticles is disclosed. The nano-scale ?-phase alumina microparticles are uniform in particle size and highly phase-pure. They are obtained by controlling the ratio of boehmite mixed with the ?-phase alumina initial powders, followed by at least one phase transformation. Therefore, the nano-scale ?-phase alumina microparticles produced by the present method have more uniform particle size and highly purer phase. As such for the production of nano-scale ?-phase alumina microparticles, the present method saves more process time and cost, and it provides an advantage such as the clean production.